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IPB019N08N3G
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 		IPB019N08N3G INFINEON TECHNOLOGIES IPB019N08N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 300W; PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO263-7
Drain-source voltage: 80V
Drain current: 180A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Produkt ist nicht verfügbar
IRFS7430TRL7PP IRFS7430TRL7PP INFINEON TECHNOLOGIES IRFS7430TRL7PP.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; 375W; D2PAK-7
Case: D2PAK-7
Mounting: SMD
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 240A
On-state resistance: 0.55mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Gate charge: 305nC
Produkt ist nicht verfügbar
IRFH8311TRPBF IRFH8311TRPBF INFINEON TECHNOLOGIES IRFH8311TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFS7440TRLPBF IRFS7440TRLPBF INFINEON TECHNOLOGIES IRFS7440TRLPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 208W
Case: D2PAK
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRLS3034TRLPBF IRLS3034TRLPBF INFINEON TECHNOLOGIES IRLS3034TRLPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
AUIRLS3034 INFINEON TECHNOLOGIES AUIRLS3034.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 243A; 375W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 243A
Power dissipation: 375W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 108nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
BSC030P03NS3GAUMA1 BSC030P03NS3GAUMA1 INFINEON TECHNOLOGIES BSC030P03NS3GAUMA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 125W; PG-TDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±25V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 3145 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.37 EUR
24+ 3.09 EUR
26+ 2.76 EUR
46+ 1.59 EUR
48+ 1.5 EUR
Mindestbestellmenge: 22
IFCM20T65GDXKMA1 IFCM20T65GDXKMA1 INFINEON TECHNOLOGIES IFCM20T65GD.pdf Category: Motor and PWM drivers
Description: IC: driver; IPM,2-phase motor controller; PG-MDIP24; 20A; 60kHz
Type of integrated circuit: driver
Kind of integrated circuit: 2-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™ 5
Case: PG-MDIP24
Output current: 20A
Integrated circuit features: interleaved PFC
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...450V
Frequency: 60kHz
Kind of package: tube
Voltage class: 650V
Power dissipation: 52.3W
Produkt ist nicht verfügbar
IGCM04F60GAXKMA1 IGCM04F60GAXKMA1 INFINEON TECHNOLOGIES IGCM04F60GA.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; -4÷4A
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -4...4A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 21.8W
auf Bestellung 246 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.53 EUR
7+ 10.47 EUR
Mindestbestellmenge: 5
IKCM10H60GAXKMA1 IKCM10H60GAXKMA1 INFINEON TECHNOLOGIES IKCM10H60GA.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 23.1W
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.37 EUR
8+ 8.95 EUR
Mindestbestellmenge: 6
IKCM15H60GAXKMA2 IKCM15H60GAXKMA2 INFINEON TECHNOLOGIES IKCM15H60GA.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 25.2W
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
6+14.26 EUR
7+ 10.8 EUR
8+ 10.21 EUR
Mindestbestellmenge: 6
IKCM30F60GAXKMA1 IKCM30F60GAXKMA1 INFINEON TECHNOLOGIES IKCM30F60GA.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -20...20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 30.3W
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
3+24.58 EUR
Mindestbestellmenge: 3
IRFH9310TRPBF IRFH9310TRPBF INFINEON TECHNOLOGIES irfh9310pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -17A; 3.1W; PQFN5X6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -17A
Power dissipation: 3.1W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
auf Bestellung 3495 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.79 EUR
48+ 1.52 EUR
61+ 1.17 EUR
65+ 1.12 EUR
250+ 1.07 EUR
Mindestbestellmenge: 40
IRF9317TRPBF IRF9317TRPBF INFINEON TECHNOLOGIES irf9317pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -16A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -16A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
ICE2PCS01GXUMA1 ICE2PCS01GXUMA1 INFINEON TECHNOLOGIES ICE2PCS01G.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 50÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Output current: -1.5...2A
Frequency: 50...250kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Topology: boost
Input voltage: 80...265V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V
auf Bestellung 863 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.77 EUR
46+ 1.59 EUR
54+ 1.33 EUR
58+ 1.24 EUR
500+ 1.2 EUR
Mindestbestellmenge: 41
ICE2PCS05GXUMA1 ICE2PCS05GXUMA1 INFINEON TECHNOLOGIES INFNS16600-1.pdf?t.download=true&u=5oefqw Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 20÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Output current: -1.5...2A
Frequency: 20...250kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Topology: boost
Input voltage: 85...265V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V
Produkt ist nicht verfügbar
IPB035N08N3GATMA1 IPB035N08N3GATMA1 INFINEON TECHNOLOGIES IPB035N08N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Power dissipation: 214W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 3.5mΩ
Produkt ist nicht verfügbar
IRFB7437PBF IRFB7437PBF INFINEON TECHNOLOGIES IRFB7437PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 250A; 230W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Power dissipation: 230W
Polarisation: unipolar
Gate charge: 150nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Trade name: StrongIRFET
Drain-source voltage: 40V
Drain current: 250A
On-state resistance: 2mΩ
Type of transistor: N-MOSFET
auf Bestellung 356 Stücke:
Lieferzeit 14-21 Tag (e)
49+1.49 EUR
53+ 1.36 EUR
61+ 1.19 EUR
70+ 1.03 EUR
74+ 0.97 EUR
Mindestbestellmenge: 49
IR21834SPBF IR21834SPBF INFINEON TECHNOLOGIES IR2183SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
15+5.02 EUR
17+ 4.45 EUR
19+ 3.88 EUR
20+ 3.66 EUR
Mindestbestellmenge: 15
IRFR4620TRLPBF IRFR4620TRLPBF INFINEON TECHNOLOGIES irfr4620pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; 144W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Power dissipation: 144W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IHW30N120R5XKSA1 IHW30N120R5XKSA1 INFINEON TECHNOLOGIES IHW30N120R5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 30A; 165W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 165W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Turn-off time: 363ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.2 EUR
22+ 3.25 EUR
Mindestbestellmenge: 18
IAUC60N06S5L073ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N06S5L073-DataSheet-v01_01-EN.pdf?fileId=5546d4627a0b0c7b017a1eb4f9c26feb Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 168A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 22.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
IAUC60N06S5N074ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N06S5N074-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1eb505e56fee Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 168A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPA060N06NM5SXKSA1 IPA060N06NM5SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA060N06NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cebbb676e20 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; Idm: 224A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Pulsed drain current: 224A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 498 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.89 EUR
42+ 1.72 EUR
48+ 1.5 EUR
55+ 1.3 EUR
59+ 1.23 EUR
Mindestbestellmenge: 38
IPA060N06NXKSA1 IPA060N06NXKSA1 INFINEON TECHNOLOGIES IPA060N06N-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPP060N06NAKSA1 IPP060N06NAKSA1 INFINEON TECHNOLOGIES IPP060N06NAKSA1-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 107W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
BGS12P2L6E6327XTSA1 INFINEON TECHNOLOGIES Infineon-BGS12P2L6-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016d4487d53603ce Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; TSLP-6-4; 1.65÷3.4VDC; 0.05÷6GHz
Type of integrated circuit: RF switch
Output configuration: SPDT
Case: TSLP-6-4
Supply voltage: 1.65...3.4V DC
Mounting: SMD
Bandwidth: 0.05...6GHz
Application: telecommunication
Produkt ist nicht verfügbar
IRF9Z24NPBF IRF9Z24NPBF INFINEON TECHNOLOGIES irf9z24n.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -12A; 45W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -12A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: THT
Gate charge: 12.7nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 1040 Stücke:
Lieferzeit 14-21 Tag (e)
91+0.79 EUR
101+ 0.71 EUR
177+ 0.41 EUR
186+ 0.38 EUR
Mindestbestellmenge: 91
IRF9Z24NSTRLPBF INFINEON TECHNOLOGIES Infineon-IRF9Z24NS-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee376ad063e Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -8.5A; Idm: -48A; 45W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -8.5A
Pulsed drain current: -48A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
BAT6404E6327HTSA1 BAT6404E6327HTSA1 INFINEON TECHNOLOGIES BAT6402VH6327XTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOT23; 250mW
Mounting: SMD
Power dissipation: 0.25W
Type of diode: Schottky rectifying
Case: SOT23
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: double series
Max. forward impulse current: 0.8A
auf Bestellung 340 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
332+ 0.22 EUR
340+ 0.21 EUR
Mindestbestellmenge: 162
IRLR3410TRPBF IRLR3410TRPBF INFINEON TECHNOLOGIES irlr3410pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
IRLR3410TRRPBF IRLR3410TRRPBF INFINEON TECHNOLOGIES irlr3410pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
BSS606NH6327XTSA1 BSS606NH6327XTSA1 INFINEON TECHNOLOGIES BSS606NH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Case: PG-SOT89
Mounting: SMD
Power dissipation: 1W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 3.2A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
114+0.63 EUR
164+ 0.44 EUR
199+ 0.36 EUR
319+ 0.22 EUR
338+ 0.21 EUR
Mindestbestellmenge: 114
BSS127H6327XTSA2 BSS127H6327XTSA2 INFINEON TECHNOLOGIES BSS127H6327XTSA2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Technology: SIPMOS™
Mounting: SMD
Case: SOT23
Power dissipation: 0.5W
On-state resistance: 500Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 600V
Drain current: 0.021A
auf Bestellung 4804 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
236+ 0.3 EUR
365+ 0.2 EUR
410+ 0.17 EUR
610+ 0.12 EUR
650+ 0.11 EUR
Mindestbestellmenge: 162
TLE6240GPAUMA1 TLE6240GPAUMA1 INFINEON TECHNOLOGIES TLE6240GP.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1÷3A; Ch: 16; N-Channel; SMD; PG-DSO-36
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Number of channels: 16
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-36
Mounting: SMD
Operating temperature: -40...150°C
Technology: FLEX
Kind of output: N-Channel
Turn-off time: 12µs
Turn-on time: 12µs
Output current: 1...3A
Produkt ist nicht verfügbar
BAR6402VH6327XTSA1 BAR6402VH6327XTSA1 INFINEON TECHNOLOGIES BAR64xx_Ser.pdf Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Case: SC79
Max. off-state voltage: 150V
Max. forward voltage: 1.1V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
auf Bestellung 2010 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
281+ 0.25 EUR
472+ 0.15 EUR
633+ 0.11 EUR
705+ 0.1 EUR
Mindestbestellmenge: 179
FF450R06ME3 FF450R06ME3 INFINEON TECHNOLOGIES FF450R06ME3.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Case: AG-ECONOD-3
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 1.25kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Produkt ist nicht verfügbar
FF450R12KE4HOSA1 INFINEON TECHNOLOGIES FF450R12KE4-DTE.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.4kW
Produkt ist nicht verfügbar
FF450R12KT4HOSA1 INFINEON TECHNOLOGIES FF450R12KT4.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.4kW
Produkt ist nicht verfügbar
FF450R33T3E3B5BPSA1 INFINEON TECHNOLOGIES Infineon-FF450R33T3E3_B5-DS-v03_00-EN.pdf?fileId=5546d46267c74c9a01683cd2886064d9 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Case: AG-XHP100-6
Max. off-state voltage: 3.3kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: XHP™3
Topology: IGBT half-bridge
Produkt ist nicht verfügbar
IFF450B12ME4PB11BPSA1 INFINEON TECHNOLOGIES IFF450B12ME4PB11.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Case: AG-ECONOD-6
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Application: for UPS; Inverter; motors; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Produkt ist nicht verfügbar
IHW20N120R5XKSA1 IHW20N120R5XKSA1 INFINEON TECHNOLOGIES IHW20N120R5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 20A; 144W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 144W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-off time: 440ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.85 EUR
17+ 4.36 EUR
22+ 3.35 EUR
23+ 3.16 EUR
Mindestbestellmenge: 15
IRF7317TRPBF IRF7317TRPBF INFINEON TECHNOLOGIES irf7317pbf.pdf description Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 6.6/-5.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 6.6/-5.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRF7380TRPBF IRF7380TRPBF INFINEON TECHNOLOGIES irf7380pbf.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 3.6A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
BTS5090-1EJA BTS5090-1EJA INFINEON TECHNOLOGIES BTS5090-1EJA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; DSO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DSO8
On-state resistance: 90mΩ
Supply voltage: 13.5V DC
Technology: PROFET™+ 12V
auf Bestellung 2490 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.64 EUR
49+ 1.49 EUR
55+ 1.32 EUR
61+ 1.19 EUR
65+ 1.12 EUR
Mindestbestellmenge: 44
IRS2110SPBF IRS2110SPBF INFINEON TECHNOLOGIES irs2110.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Power: 1.25W
Case: SO16
Mounting: SMD
Kind of package: tube
Turn-on time: 155ns
Turn-off time: 137ns
Output current: -2...2A
Operating temperature: -40...125°C
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Voltage class: 500V
Supply voltage: 10...20V DC
Type of integrated circuit: driver
Number of channels: 2
Produkt ist nicht verfügbar
IRS2117SPBF IRS2117SPBF INFINEON TECHNOLOGIES irs2117pbf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Produkt ist nicht verfügbar
IRS2118PBF IRS2118PBF INFINEON TECHNOLOGIES irs2117pbf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Produkt ist nicht verfügbar
IRS2118SPBF IRS2118SPBF INFINEON TECHNOLOGIES irs2117pbf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Produkt ist nicht verfügbar
DF400R12KE3HOSA1 DF400R12KE3HOSA1 INFINEON TECHNOLOGIES DF400R12KE3.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Topology: buck chopper
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Power dissipation: 2kW
Produkt ist nicht verfügbar
BCR112E6327HTSA1
+1
 		BCR112E6327HTSA1 INFINEON TECHNOLOGIES bcr112series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143a34902e01d0 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
auf Bestellung 2640 Stücke:
Lieferzeit 14-21 Tag (e)
977+0.073 EUR
1114+ 0.064 EUR
1429+ 0.05 EUR
1511+ 0.047 EUR
Mindestbestellmenge: 977
BCR562E6327 BCR562E6327 INFINEON TECHNOLOGIES BCR562.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 4.7kΩ
Mounting: SMD
Power dissipation: 0.33W
Polarisation: bipolar
Type of transistor: PNP
Collector current: 0.5A
Collector-emitter voltage: 50V
Frequency: 150MHz
Case: SOT23
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
auf Bestellung 2330 Stücke:
Lieferzeit 14-21 Tag (e)
380+0.19 EUR
590+ 0.12 EUR
660+ 0.11 EUR
850+ 0.084 EUR
895+ 0.08 EUR
Mindestbestellmenge: 380
BCR116SH6327 BCR116SH6327 INFINEON TECHNOLOGIES BCR116.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 4.7kΩ
Frequency: 150MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SOT363
auf Bestellung 1509 Stücke:
Lieferzeit 14-21 Tag (e)
527+0.14 EUR
589+ 0.12 EUR
769+ 0.093 EUR
814+ 0.088 EUR
Mindestbestellmenge: 527
BAS16UE6327HTSA1 BAS16UE6327HTSA1 INFINEON TECHNOLOGIES BAS16SH6327XTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; Ifsm: 4.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Features of semiconductor devices: ultrafast switching
Case: SC74
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
auf Bestellung 4775 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
379+ 0.19 EUR
410+ 0.17 EUR
486+ 0.15 EUR
511+ 0.14 EUR
Mindestbestellmenge: 358
BAV70UE6327HTSA1 BAV70UE6327HTSA1 INFINEON TECHNOLOGIES BAV70E6327HTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SC74; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: common cathode; double x2
Features of semiconductor devices: ultrafast switching
Case: SC74
Power dissipation: 0.25W
Kind of package: reel; tape
auf Bestellung 9099 Stücke:
Lieferzeit 14-21 Tag (e)
3049+0.023 EUR
Mindestbestellmenge: 3049
BAV99UE6327HTSA1 BAV99UE6327HTSA1 INFINEON TECHNOLOGIES BAV99SH6327XTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SC74; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: double series x2
Features of semiconductor devices: ultrafast switching
Case: SC74
Power dissipation: 0.25W
Kind of package: reel; tape
auf Bestellung 1032 Stücke:
Lieferzeit 14-21 Tag (e)
432+0.17 EUR
532+ 0.13 EUR
676+ 0.11 EUR
725+ 0.099 EUR
Mindestbestellmenge: 432
BAW101E6327HTSA1 BAW101E6327HTSA1 INFINEON TECHNOLOGIES BAW101E6327HTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.25A; 1us; SOT143; 350mW; reel,tape
Type of diode: switching
Mounting: SMD
Case: SOT143
Kind of package: reel; tape
Max. off-state voltage: 300V
Load current: 0.25A
Semiconductor structure: double independent
Reverse recovery time: 1µs
Power dissipation: 0.35W
auf Bestellung 4850 Stücke:
Lieferzeit 14-21 Tag (e)
375+0.19 EUR
455+ 0.16 EUR
520+ 0.14 EUR
575+ 0.12 EUR
Mindestbestellmenge: 375
BAT64E6327HTSA1 BAT64E6327HTSA1 INFINEON TECHNOLOGIES BAT6402VH6327XTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOT23; 250mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Case: SOT23
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
auf Bestellung 6759 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
343+ 0.21 EUR
433+ 0.17 EUR
594+ 0.12 EUR
1238+ 0.058 EUR
1309+ 0.055 EUR
Mindestbestellmenge: 179
BAT165E6327HTSA1 BAT165E6327HTSA1 INFINEON TECHNOLOGIES BAT165E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.75A; SOD323
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.75A
Semiconductor structure: single diode
Case: SOD323
auf Bestellung 10367 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
280+ 0.26 EUR
385+ 0.19 EUR
596+ 0.12 EUR
625+ 0.11 EUR
Mindestbestellmenge: 200
BAS4004E6327HTSA1 BAS4004E6327HTSA1 INFINEON TECHNOLOGIES BAS4004E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.12A; SOT23; 250mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double series
Case: SOT23
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
auf Bestellung 7740 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
407+ 0.18 EUR
557+ 0.13 EUR
1069+ 0.067 EUR
1132+ 0.063 EUR
Mindestbestellmenge: 313
IPB019N08N3G IPB019N08N3G-DTE.pdf
IPB019N08N3G
+1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 300W; PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO263-7
Drain-source voltage: 80V
Drain current: 180A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Produkt ist nicht verfügbar
IRFS7430TRL7PP IRFS7430TRL7PP.pdf
IRFS7430TRL7PP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; 375W; D2PAK-7
Case: D2PAK-7
Mounting: SMD
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 240A
On-state resistance: 0.55mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Gate charge: 305nC
Produkt ist nicht verfügbar
IRFH8311TRPBF IRFH8311TRPBF.pdf
IRFH8311TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFS7440TRLPBF IRFS7440TRLPBF.pdf
IRFS7440TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 208W
Case: D2PAK
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRLS3034TRLPBF IRLS3034TRLPBF.pdf
IRLS3034TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
AUIRLS3034 AUIRLS3034.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 243A; 375W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 243A
Power dissipation: 375W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 108nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
BSC030P03NS3GAUMA1 BSC030P03NS3GAUMA1-DTE.pdf
BSC030P03NS3GAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 125W; PG-TDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±25V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 3145 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
22+3.37 EUR
24+ 3.09 EUR
26+ 2.76 EUR
46+ 1.59 EUR
48+ 1.5 EUR
Mindestbestellmenge: 22
IFCM20T65GDXKMA1 IFCM20T65GD.pdf
IFCM20T65GDXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IPM,2-phase motor controller; PG-MDIP24; 20A; 60kHz
Type of integrated circuit: driver
Kind of integrated circuit: 2-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™ 5
Case: PG-MDIP24
Output current: 20A
Integrated circuit features: interleaved PFC
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...450V
Frequency: 60kHz
Kind of package: tube
Voltage class: 650V
Power dissipation: 52.3W
Produkt ist nicht verfügbar
IGCM04F60GAXKMA1 IGCM04F60GA.pdf
IGCM04F60GAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; -4÷4A
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -4...4A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 21.8W
auf Bestellung 246 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
5+14.53 EUR
7+ 10.47 EUR
Mindestbestellmenge: 5
IKCM10H60GAXKMA1 IKCM10H60GA.pdf
IKCM10H60GAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 23.1W
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
6+12.37 EUR
8+ 8.95 EUR
Mindestbestellmenge: 6
IKCM15H60GAXKMA2 IKCM15H60GA.pdf
IKCM15H60GAXKMA2
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 25.2W
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
6+14.26 EUR
7+ 10.8 EUR
8+ 10.21 EUR
Mindestbestellmenge: 6
IKCM30F60GAXKMA1 IKCM30F60GA.pdf
IKCM30F60GAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -20...20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 30.3W
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3+24.58 EUR
Mindestbestellmenge: 3
IRFH9310TRPBF irfh9310pbf.pdf
IRFH9310TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -17A; 3.1W; PQFN5X6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -17A
Power dissipation: 3.1W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
auf Bestellung 3495 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
40+1.79 EUR
48+ 1.52 EUR
61+ 1.17 EUR
65+ 1.12 EUR
250+ 1.07 EUR
Mindestbestellmenge: 40
IRF9317TRPBF irf9317pbf.pdf
IRF9317TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -16A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -16A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
ICE2PCS01GXUMA1 ICE2PCS01G.pdf
ICE2PCS01GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 50÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Output current: -1.5...2A
Frequency: 50...250kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Topology: boost
Input voltage: 80...265V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V
auf Bestellung 863 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
41+1.77 EUR
46+ 1.59 EUR
54+ 1.33 EUR
58+ 1.24 EUR
500+ 1.2 EUR
Mindestbestellmenge: 41
ICE2PCS05GXUMA1 INFNS16600-1.pdf?t.download=true&u=5oefqw
ICE2PCS05GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 20÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Output current: -1.5...2A
Frequency: 20...250kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Topology: boost
Input voltage: 85...265V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V
Produkt ist nicht verfügbar
IPB035N08N3GATMA1 IPB035N08N3G-DTE.pdf
IPB035N08N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Power dissipation: 214W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 3.5mΩ
Produkt ist nicht verfügbar
IRFB7437PBF IRFB7437PBF.pdf
IRFB7437PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 250A; 230W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Power dissipation: 230W
Polarisation: unipolar
Gate charge: 150nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Trade name: StrongIRFET
Drain-source voltage: 40V
Drain current: 250A
On-state resistance: 2mΩ
Type of transistor: N-MOSFET
auf Bestellung 356 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
49+1.49 EUR
53+ 1.36 EUR
61+ 1.19 EUR
70+ 1.03 EUR
74+ 0.97 EUR
Mindestbestellmenge: 49
IR21834SPBF IR2183SPBF.pdf
IR21834SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
15+5.02 EUR
17+ 4.45 EUR
19+ 3.88 EUR
20+ 3.66 EUR
Mindestbestellmenge: 15
IRFR4620TRLPBF irfr4620pbf.pdf
IRFR4620TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; 144W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Power dissipation: 144W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IHW30N120R5XKSA1 IHW30N120R5.pdf
IHW30N120R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 30A; 165W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 165W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Turn-off time: 363ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
18+4.2 EUR
22+ 3.25 EUR
Mindestbestellmenge: 18
IAUC60N06S5L073ATMA1 Infineon-IAUC60N06S5L073-DataSheet-v01_01-EN.pdf?fileId=5546d4627a0b0c7b017a1eb4f9c26feb
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 168A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 22.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
IAUC60N06S5N074ATMA1 Infineon-IAUC60N06S5N074-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1eb505e56fee
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 168A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPA060N06NM5SXKSA1 Infineon-IPA060N06NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cebbb676e20
IPA060N06NM5SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; Idm: 224A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Pulsed drain current: 224A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 498 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
38+1.89 EUR
42+ 1.72 EUR
48+ 1.5 EUR
55+ 1.3 EUR
59+ 1.23 EUR
Mindestbestellmenge: 38
IPA060N06NXKSA1 IPA060N06N-DTE.pdf
IPA060N06NXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPP060N06NAKSA1 IPP060N06NAKSA1-DTE.pdf
IPP060N06NAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 107W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
BGS12P2L6E6327XTSA1 Infineon-BGS12P2L6-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016d4487d53603ce
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; TSLP-6-4; 1.65÷3.4VDC; 0.05÷6GHz
Type of integrated circuit: RF switch
Output configuration: SPDT
Case: TSLP-6-4
Supply voltage: 1.65...3.4V DC
Mounting: SMD
Bandwidth: 0.05...6GHz
Application: telecommunication
Produkt ist nicht verfügbar
IRF9Z24NPBF irf9z24n.pdf
IRF9Z24NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -12A; 45W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -12A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: THT
Gate charge: 12.7nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 1040 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
91+0.79 EUR
101+ 0.71 EUR
177+ 0.41 EUR
186+ 0.38 EUR
Mindestbestellmenge: 91
IRF9Z24NSTRLPBF Infineon-IRF9Z24NS-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee376ad063e
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -8.5A; Idm: -48A; 45W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -8.5A
Pulsed drain current: -48A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
BAT6404E6327HTSA1 BAT6402VH6327XTSA1.pdf
BAT6404E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOT23; 250mW
Mounting: SMD
Power dissipation: 0.25W
Type of diode: Schottky rectifying
Case: SOT23
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: double series
Max. forward impulse current: 0.8A
auf Bestellung 340 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
162+0.44 EUR
332+ 0.22 EUR
340+ 0.21 EUR
Mindestbestellmenge: 162
IRLR3410TRPBF description irlr3410pbf.pdf
IRLR3410TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
IRLR3410TRRPBF irlr3410pbf.pdf
IRLR3410TRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
BSS606NH6327XTSA1 BSS606NH6327XTSA1.pdf
BSS606NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Case: PG-SOT89
Mounting: SMD
Power dissipation: 1W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 3.2A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
114+0.63 EUR
164+ 0.44 EUR
199+ 0.36 EUR
319+ 0.22 EUR
338+ 0.21 EUR
Mindestbestellmenge: 114
BSS127H6327XTSA2 BSS127H6327XTSA2.pdf
BSS127H6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Technology: SIPMOS™
Mounting: SMD
Case: SOT23
Power dissipation: 0.5W
On-state resistance: 500Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 600V
Drain current: 0.021A
auf Bestellung 4804 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
162+0.44 EUR
236+ 0.3 EUR
365+ 0.2 EUR
410+ 0.17 EUR
610+ 0.12 EUR
650+ 0.11 EUR
Mindestbestellmenge: 162
TLE6240GPAUMA1 TLE6240GP.pdf
TLE6240GPAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1÷3A; Ch: 16; N-Channel; SMD; PG-DSO-36
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Number of channels: 16
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-36
Mounting: SMD
Operating temperature: -40...150°C
Technology: FLEX
Kind of output: N-Channel
Turn-off time: 12µs
Turn-on time: 12µs
Output current: 1...3A
Produkt ist nicht verfügbar
BAR6402VH6327XTSA1 BAR64xx_Ser.pdf
BAR6402VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Case: SC79
Max. off-state voltage: 150V
Max. forward voltage: 1.1V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
auf Bestellung 2010 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
179+0.4 EUR
281+ 0.25 EUR
472+ 0.15 EUR
633+ 0.11 EUR
705+ 0.1 EUR
Mindestbestellmenge: 179
FF450R06ME3 FF450R06ME3.pdf
FF450R06ME3
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Case: AG-ECONOD-3
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 1.25kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Produkt ist nicht verfügbar
FF450R12KE4HOSA1 FF450R12KE4-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.4kW
Produkt ist nicht verfügbar
FF450R12KT4HOSA1 FF450R12KT4.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.4kW
Produkt ist nicht verfügbar
FF450R33T3E3B5BPSA1 Infineon-FF450R33T3E3_B5-DS-v03_00-EN.pdf?fileId=5546d46267c74c9a01683cd2886064d9
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Case: AG-XHP100-6
Max. off-state voltage: 3.3kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: XHP™3
Topology: IGBT half-bridge
Produkt ist nicht verfügbar
IFF450B12ME4PB11BPSA1 IFF450B12ME4PB11.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Case: AG-ECONOD-6
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Application: for UPS; Inverter; motors; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Produkt ist nicht verfügbar
IHW20N120R5XKSA1 IHW20N120R5.pdf
IHW20N120R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 20A; 144W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 144W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-off time: 440ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
15+4.85 EUR
17+ 4.36 EUR
22+ 3.35 EUR
23+ 3.16 EUR
Mindestbestellmenge: 15
IRF7317TRPBF description irf7317pbf.pdf
IRF7317TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 6.6/-5.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 6.6/-5.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRF7380TRPBF irf7380pbf.pdf
IRF7380TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 3.6A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
BTS5090-1EJA BTS5090-1EJA.pdf
BTS5090-1EJA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; DSO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DSO8
On-state resistance: 90mΩ
Supply voltage: 13.5V DC
Technology: PROFET™+ 12V
auf Bestellung 2490 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
44+1.64 EUR
49+ 1.49 EUR
55+ 1.32 EUR
61+ 1.19 EUR
65+ 1.12 EUR
Mindestbestellmenge: 44
IRS2110SPBF description irs2110.pdf
IRS2110SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Power: 1.25W
Case: SO16
Mounting: SMD
Kind of package: tube
Turn-on time: 155ns
Turn-off time: 137ns
Output current: -2...2A
Operating temperature: -40...125°C
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Voltage class: 500V
Supply voltage: 10...20V DC
Type of integrated circuit: driver
Number of channels: 2
Produkt ist nicht verfügbar
IRS2117SPBF irs2117pbf.pdf
IRS2117SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Produkt ist nicht verfügbar
IRS2118PBF irs2117pbf.pdf
IRS2118PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Produkt ist nicht verfügbar
IRS2118SPBF irs2117pbf.pdf
IRS2118SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Produkt ist nicht verfügbar
DF400R12KE3HOSA1 DF400R12KE3.pdf
DF400R12KE3HOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Topology: buck chopper
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Power dissipation: 2kW
Produkt ist nicht verfügbar
BCR112E6327HTSA1 bcr112series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143a34902e01d0
BCR112E6327HTSA1
+1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
auf Bestellung 2640 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
977+0.073 EUR
1114+ 0.064 EUR
1429+ 0.05 EUR
1511+ 0.047 EUR
Mindestbestellmenge: 977
BCR562E6327 BCR562.pdf
BCR562E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 4.7kΩ
Mounting: SMD
Power dissipation: 0.33W
Polarisation: bipolar
Type of transistor: PNP
Collector current: 0.5A
Collector-emitter voltage: 50V
Frequency: 150MHz
Case: SOT23
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
auf Bestellung 2330 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
380+0.19 EUR
590+ 0.12 EUR
660+ 0.11 EUR
850+ 0.084 EUR
895+ 0.08 EUR
Mindestbestellmenge: 380
BCR116SH6327 BCR116.pdf
BCR116SH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 4.7kΩ
Frequency: 150MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SOT363
auf Bestellung 1509 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
527+0.14 EUR
589+ 0.12 EUR
769+ 0.093 EUR
814+ 0.088 EUR
Mindestbestellmenge: 527
BAS16UE6327HTSA1 BAS16SH6327XTSA1.pdf
BAS16UE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; Ifsm: 4.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Features of semiconductor devices: ultrafast switching
Case: SC74
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
auf Bestellung 4775 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
358+0.2 EUR
379+ 0.19 EUR
410+ 0.17 EUR
486+ 0.15 EUR
511+ 0.14 EUR
Mindestbestellmenge: 358
BAV70UE6327HTSA1 BAV70E6327HTSA1.pdf
BAV70UE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SC74; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: common cathode; double x2
Features of semiconductor devices: ultrafast switching
Case: SC74
Power dissipation: 0.25W
Kind of package: reel; tape
auf Bestellung 9099 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3049+0.023 EUR
Mindestbestellmenge: 3049
BAV99UE6327HTSA1 BAV99SH6327XTSA1.pdf
BAV99UE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SC74; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: double series x2
Features of semiconductor devices: ultrafast switching
Case: SC74
Power dissipation: 0.25W
Kind of package: reel; tape
auf Bestellung 1032 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
432+0.17 EUR
532+ 0.13 EUR
676+ 0.11 EUR
725+ 0.099 EUR
Mindestbestellmenge: 432
BAW101E6327HTSA1 BAW101E6327HTSA1.pdf
BAW101E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.25A; 1us; SOT143; 350mW; reel,tape
Type of diode: switching
Mounting: SMD
Case: SOT143
Kind of package: reel; tape
Max. off-state voltage: 300V
Load current: 0.25A
Semiconductor structure: double independent
Reverse recovery time: 1µs
Power dissipation: 0.35W
auf Bestellung 4850 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
375+0.19 EUR
455+ 0.16 EUR
520+ 0.14 EUR
575+ 0.12 EUR
Mindestbestellmenge: 375
BAT64E6327HTSA1 BAT6402VH6327XTSA1.pdf
BAT64E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOT23; 250mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Case: SOT23
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
auf Bestellung 6759 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
179+0.4 EUR
343+ 0.21 EUR
433+ 0.17 EUR
594+ 0.12 EUR
1238+ 0.058 EUR
1309+ 0.055 EUR
Mindestbestellmenge: 179
BAT165E6327HTSA1 BAT165E6327HTSA1.pdf
BAT165E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.75A; SOD323
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.75A
Semiconductor structure: single diode
Case: SOD323
auf Bestellung 10367 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
200+0.36 EUR
280+ 0.26 EUR
385+ 0.19 EUR
596+ 0.12 EUR
625+ 0.11 EUR
Mindestbestellmenge: 200
BAS4004E6327HTSA1 BAS4004E6327HTSA1.pdf
BAS4004E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.12A; SOT23; 250mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double series
Case: SOT23
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
auf Bestellung 7740 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
313+0.23 EUR
407+ 0.18 EUR
557+ 0.13 EUR
1069+ 0.067 EUR
1132+ 0.063 EUR
Mindestbestellmenge: 313
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