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IRFI131ONPBF IRFI131ONPBF INFINEON TECHNOLOGIES irfi1310n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 45W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.65 EUR
Mindestbestellmenge: 27
IRFI4110GPBF IRFI4110GPBF INFINEON TECHNOLOGIES irfi4110gpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 72A; 61W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 72A
Power dissipation: 61W
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.18 EUR
20+ 3.68 EUR
27+ 2.7 EUR
28+ 2.56 EUR
Mindestbestellmenge: 18
IRFI4229PBF IRFI4229PBF INFINEON TECHNOLOGIES irfi4229pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 19A; 46W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 19A
Power dissipation: 46W
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFI4321PBF IRFI4321PBF INFINEON TECHNOLOGIES irfi4321pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 34A; 46W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 34A
Power dissipation: 46W
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.95 EUR
26+ 2.82 EUR
30+ 2.45 EUR
31+ 2.32 EUR
Mindestbestellmenge: 25
IRFI4410ZPBF IRFI4410ZPBF INFINEON TECHNOLOGIES IRFI4410ZPBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 47W; TO220FP
Drain-source voltage: 100V
Drain current: 30A
On-state resistance: 9.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 47W
Polarisation: unipolar
Kind of package: tube
Gate charge: 81nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: THT
Case: TO220FP
auf Bestellung 1056 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.07 EUR
31+ 2.36 EUR
33+ 2.23 EUR
50+ 2.2 EUR
100+ 2.14 EUR
Mindestbestellmenge: 24
IRFI530NPBF IRFI530NPBF INFINEON TECHNOLOGIES irfi530n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 29.3nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFI540NPBF IRFI540NPBF INFINEON TECHNOLOGIES irfi540n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 42W; TO220FP
Kind of package: tube
Mounting: THT
Gate charge: 62.7nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220FP
Drain-source voltage: 100V
Drain current: 18A
On-state resistance: 52mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
auf Bestellung 668 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.89 EUR
48+ 1.5 EUR
76+ 0.94 EUR
81+ 0.89 EUR
Mindestbestellmenge: 38
IPB033N10N5LF IPB033N10N5LF INFINEON TECHNOLOGIES IPB033N10N5LF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 179W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 108A
Power dissipation: 179W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
BGSA14GN10E6327XTSA1 INFINEON TECHNOLOGIES Infineon-BGSA14GN10-DataSheet-v03_01-EN.pdf?fileId=5546d46255dd933d0155e9e3e86f09ff Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; TSNP10; 1.8÷3.6VDC; 0.1÷5GHz
Type of integrated circuit: RF switch
Number of channels: 4
Mounting: SMD
Case: TSNP10
Supply voltage: 1.8...3.6V DC
Application: telecommunication
Bandwidth: 0.1...5GHz
Output configuration: SP4T
Produkt ist nicht verfügbar
BSO613SPVGXUMA1 BSO613SPVGXUMA1 INFINEON TECHNOLOGIES Infineon-BSO613SPVG-DS-v01_04-en.pdf?fileId=db3a304412b407950112b42ae038440c Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.44A; Idm: -13.8A; 2.5W; SO8
Mounting: SMD
Polarisation: unipolar
Power dissipation: 2.5W
Type of transistor: P-MOSFET
On-state resistance: 0.13Ω
Drain current: -3.44A
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -13.8A
Drain-source voltage: -60V
Case: SO8
Produkt ist nicht verfügbar
BSZ105N04NSGATMA1 BSZ105N04NSGATMA1 INFINEON TECHNOLOGIES BSZ105N04NSG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 29A; 35W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 29A
Power dissipation: 35W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPD031N03LGATMA1 IPD031N03LGATMA1 INFINEON TECHNOLOGIES IPD031N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
On-state resistance: 3.1mΩ
Drain-source voltage: 30V
Drain current: 79A
Type of transistor: N-MOSFET
Power dissipation: 94W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
auf Bestellung 2125 Stücke:
Lieferzeit 14-21 Tag (e)
56+1.29 EUR
61+ 1.17 EUR
81+ 0.89 EUR
86+ 0.84 EUR
Mindestbestellmenge: 56
IPD034N06N3GATMA1 IPD034N06N3GATMA1 INFINEON TECHNOLOGIES IPD034N06N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Power dissipation: 167W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3.4mΩ
Type of transistor: N-MOSFET
auf Bestellung 1213 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.13 EUR
40+ 1.79 EUR
52+ 1.4 EUR
55+ 1.32 EUR
500+ 1.27 EUR
Mindestbestellmenge: 34
IPD075N03LGATMA1 IPD075N03LGATMA1 INFINEON TECHNOLOGIES IPD075N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 47W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
On-state resistance: 7.5mΩ
Drain-source voltage: 30V
Drain current: 35A
Type of transistor: N-MOSFET
Power dissipation: 47W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
75+0.96 EUR
123+ 0.58 EUR
154+ 0.46 EUR
177+ 0.4 EUR
187+ 0.38 EUR
Mindestbestellmenge: 75
IPD135N03LGATMA1 IPD135N03LGATMA1 INFINEON TECHNOLOGIES IPD135N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 31W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
On-state resistance: 13.5mΩ
Drain-source voltage: 30V
Drain current: 21A
Type of transistor: N-MOSFET
Power dissipation: 31W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
auf Bestellung 879 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.22 EUR
121+ 0.59 EUR
137+ 0.52 EUR
158+ 0.45 EUR
167+ 0.43 EUR
500+ 0.42 EUR
Mindestbestellmenge: 59
IPD200N15N3GATMA1 INFINEON TECHNOLOGIES Infineon-IPD_BIP_200N15N3-DS-v02_07-en.pdf?fileId=db3a304319c6f18c0119cd1cc23279be Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; Idm: 200A; 150W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 40A
Pulsed drain current: 200A
Power dissipation: 150W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRF8736TRPBF IRF8736TRPBF INFINEON TECHNOLOGIES irf8736pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IR21814SPBF IR21814SPBF INFINEON TECHNOLOGIES ir2181.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Produkt ist nicht verfügbar
ICE2HS01GXUMA1 ICE2HS01GXUMA1 INFINEON TECHNOLOGIES ICE2HS01G.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 0.03÷1MHz; PG-DSO-20; SMPS
Type of integrated circuit: PMIC
Frequency: 0.03...1MHz
Case: PG-DSO-20
Mounting: SMD
Operating temperature: -25...125°C
Application: SMPS
Operating voltage: 11...18V DC
Kind of integrated circuit: resonant mode controller
Topology: push-pull
Produkt ist nicht verfügbar
IR2112PBF IR2112PBF INFINEON TECHNOLOGIES ir2112.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -420...200mA
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 205ns
Turn-off time: 145ns
auf Bestellung 78 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.43 EUR
23+ 3.16 EUR
24+ 2.99 EUR
Mindestbestellmenge: 17
IR2112SPBF IR2112SPBF INFINEON TECHNOLOGIES ir2112.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -420...200mA
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 205ns
Turn-off time: 145ns
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
18+3.98 EUR
Mindestbestellmenge: 18
IR2112STRPBF IR2112STRPBF INFINEON TECHNOLOGIES IR2112STRPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -420...200mA
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 205ns
Turn-off time: 145ns
auf Bestellung 1078 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.25 EUR
33+ 2.23 EUR
35+ 2.1 EUR
500+ 2.07 EUR
Mindestbestellmenge: 23
IRFR4105TRPBF IRFR4105TRPBF INFINEON TECHNOLOGIES irfr4105pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 25A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 25A
Power dissipation: 48W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFR4105ZTRPBF IRFR4105ZTRPBF INFINEON TECHNOLOGIES IRFR4105ZTRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Power dissipation: 48W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
AUIRFR4105ZTRL AUIRFR4105ZTRL INFINEON TECHNOLOGIES auirfr4105.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Power dissipation: 48W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IR2121PBF IR2121PBF INFINEON TECHNOLOGIES ir2121.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; DIP8; -2÷1A; 1W; Ch: 1; 5V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2...1A
Power: 1W
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 5V
Turn-on time: 150ns
Turn-off time: 105ns
auf Bestellung 175 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.1 EUR
20+ 3.69 EUR
26+ 2.85 EUR
27+ 2.69 EUR
50+ 2.63 EUR
Mindestbestellmenge: 18
2ED020I12-FI 2ED020I12-FI INFINEON TECHNOLOGIES 10027685.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-side,IGBT gate driver; -2÷1A
Output current: -2...1A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: built-in comparator; built-in operational amplifier; integrated bootstrap functionality
Kind of package: reel; tape
Protection: undervoltage UVP
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: IGBT half-bridge
Voltage class: 1.2kV
Mounting: SMD
Case: PG-DSO-18
Supply voltage: 0...5V; 14...18V
auf Bestellung 871 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.32 EUR
25+ 2.92 EUR
29+ 2.52 EUR
30+ 2.39 EUR
250+ 2.3 EUR
Mindestbestellmenge: 22
BTS134D BTS134D INFINEON TECHNOLOGIES BTS134D.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; SMD; TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-3
On-state resistance: 35mΩ
Technology: HITFET®
Output voltage: 42V
auf Bestellung 1161 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.32 EUR
35+ 2.07 EUR
44+ 1.64 EUR
46+ 1.56 EUR
500+ 1.52 EUR
Mindestbestellmenge: 31
IKQ75N120CH3XKSA1 IKQ75N120CH3XKSA1 INFINEON TECHNOLOGIES IKQ75N120CH3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 256W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
IKQ75N120CS6XKSA1 IKQ75N120CS6XKSA1 INFINEON TECHNOLOGIES IKQ75N120CS6XKSA1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 440W; PG-TO247-3-46
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 440W
Case: PG-TO247-3-46
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 530nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.2 EUR
9+ 8.12 EUR
10+ 7.68 EUR
Mindestbestellmenge: 6
IKQ75N120CT2XKSA1 IKQ75N120CT2XKSA1 INFINEON TECHNOLOGIES IKQ75N120CT2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 237W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 2
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 237W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
IKY75N120CH3XKSA1 INFINEON TECHNOLOGIES IKY75N120CH3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247PLUS-4; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 256W
Case: TO247PLUS-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Manufacturer series: H3
Turn-on time: 70ns
Turn-off time: 335ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
IKY75N120CS6XKSA1 IKY75N120CS6XKSA1 INFINEON TECHNOLOGIES IKY75N120CS6.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 440W; TO247PLUS-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 440W
Case: TO247PLUS-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 530nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
BTS4140N  BTS4140N  INFINEON TECHNOLOGIES BTS4140N.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 200mA; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 1Ω
Supply voltage: 4.9...60V DC
Technology: Classic PROFET
auf Bestellung 1629 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.63 EUR
49+ 1.47 EUR
62+ 1.16 EUR
65+ 1.1 EUR
500+ 1.09 EUR
1000+ 1.06 EUR
Mindestbestellmenge: 44
TLE6232GPAUMA2 TLE6232GPAUMA2 INFINEON TECHNOLOGIES TLE6232GP.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.55÷1.1A; Ch: 6; N-Channel; SMD; FLEX
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Number of channels: 6
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-36
Mounting: SMD
Operating temperature: -40...150°C
Technology: FLEX
Kind of output: N-Channel
Turn-off time: 10µs
Turn-on time: 10µs
Output current: 0.55...1.1A
Produkt ist nicht verfügbar
TLE6251-2G TLE6251-2G INFINEON TECHNOLOGIES TLE6251-2G.pdf Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; PG-DSO-14; -40÷150°C; 80mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...18V DC
Case: PG-DSO-14
Interface: CAN
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 80mA
Produkt ist nicht verfügbar
IDM02G120C5XTMA1 IDM02G120C5XTMA1 INFINEON TECHNOLOGIES IDM02G120C5-DTE.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; PG-TO252-2; 98W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: PG-TO252-2
Max. forward voltage: 1.4V
Leakage current: 1.2µA
Max. forward impulse current: 31A
Kind of package: reel; tape
Power dissipation: 98W
Produkt ist nicht verfügbar
BSZ075N08NS5ATMA1 INFINEON TECHNOLOGIES BSZ075N08NS5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFB3004PBF IRFB3004PBF INFINEON TECHNOLOGIES irfs3004pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.75mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFB3006GPBF IRFB3006GPBF INFINEON TECHNOLOGIES irfb3006gpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFB3006PBF IRFB3006PBF INFINEON TECHNOLOGIES irfb3006pbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.8 EUR
24+ 3.06 EUR
25+ 2.89 EUR
50+ 2.77 EUR
Mindestbestellmenge: 15
BSB013NE2LXIXUMA1 BSB013NE2LXIXUMA1 INFINEON TECHNOLOGIES BSB013NE2LXI-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 103A; 57W
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 103A
On-state resistance: 1.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: CanPAK™ MX; MG-WDSON-2
Produkt ist nicht verfügbar
BSB014N04LX3GXUMA1 BSB014N04LX3GXUMA1 INFINEON TECHNOLOGIES BSB014N04LX3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W
Mounting: SMD
Case: CanPAK™ MX; MG-WDSON-2
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 89W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
IPA032N06N3GXKSA1 IPA032N06N3GXKSA1 INFINEON TECHNOLOGIES IPA032N06N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 41W; TO220FP
Mounting: THT
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220FP
Drain-source voltage: 60V
Drain current: 84A
On-state resistance: 3.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Produkt ist nicht verfügbar
IPP200N15N3GXKSA1 IPP200N15N3GXKSA1 INFINEON TECHNOLOGIES IPP200N15N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 150W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Drain current: 50A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 150V
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
24+3 EUR
27+ 2.69 EUR
28+ 2.56 EUR
Mindestbestellmenge: 24
IPB180N04S4H0ATMA1 IPB180N04S4H0ATMA1 INFINEON TECHNOLOGIES IPB180N04S4H0.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 180A; 250W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 173nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
IM69D120V01XTSA1 IM69D120V01XTSA1 INFINEON TECHNOLOGIES IM69D120.pdf Category: RTV - audio integrated circuits
Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC
Interface: PDM
Supply voltage: 1.62...3.6V DC
Case: LLGA-5-1
Mounting: SMD
Kind of integrated circuit: digital microphone
Type of integrated circuit: driver/sensor
Integrated circuit features: MEMS
Produkt ist nicht verfügbar
IM69D130V01XTSA1 IM69D130V01XTSA1 INFINEON TECHNOLOGIES IM69D130.pdf Category: RTV - audio integrated circuits
Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC
Interface: PDM
Supply voltage: 1.62...3.6V DC
Case: LLGA-5-1
Mounting: SMD
Kind of integrated circuit: digital microphone
Type of integrated circuit: driver/sensor
Integrated circuit features: MEMS
Produkt ist nicht verfügbar
IRFB7730PBF IRFB7730PBF INFINEON TECHNOLOGIES IRFB7730PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 246A; 375W; TO220AB
Kind of package: tube
Drain-source voltage: 75V
Drain current: 246A
On-state resistance: 2.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Mounting: THT
Case: TO220AB
auf Bestellung 282 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.56 EUR
18+ 4.1 EUR
22+ 3.29 EUR
24+ 3.1 EUR
Mindestbestellmenge: 16
IRFB7734PBF IRFB7734PBF INFINEON TECHNOLOGIES IRFB7734PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 183A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 183A
Power dissipation: 290W
Case: TO220AB
On-state resistance: 2.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRLU120NPBF IRLU120NPBF INFINEON TECHNOLOGIES irlr120npbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 48W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 48W
Case: IPAK
Gate-source voltage: ±16V
On-state resistance: 0.185Ω
Mounting: THT
Kind of channel: enhanced
Features of semiconductor devices: logic level
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
53+1.37 EUR
90+ 0.8 EUR
Mindestbestellmenge: 53
IRLU3110ZPBF IRLU3110ZPBF INFINEON TECHNOLOGIES irlr3110zpbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 140W
Case: IPAK
Gate-source voltage: ±16V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 34nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
auf Bestellung 155 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.13 EUR
43+ 1.67 EUR
57+ 1.27 EUR
60+ 1.2 EUR
Mindestbestellmenge: 34
IRLU3410PBF IRLU3410PBF INFINEON TECHNOLOGIES irlr3410pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: IPAK
Mounting: THT
Kind of channel: enhanced
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
IRLU7843PBF IRLU7843PBF INFINEON TECHNOLOGIES irlr7843pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 161A; 140W; IPAK
Power dissipation: 140W
Polarisation: unipolar
Features of semiconductor devices: logic level
Kind of channel: enhanced
Technology: HEXFET®
Mounting: THT
Case: IPAK
Drain-source voltage: 30V
Drain current: 161A
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
IRLU8743PBF IRLU8743PBF INFINEON TECHNOLOGIES irlr8743pbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 160A; 135W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 160A
Power dissipation: 135W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 39nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
43+1.67 EUR
81+ 0.89 EUR
85+ 0.84 EUR
Mindestbestellmenge: 43
IRFB4410PBF IRFB4410PBF INFINEON TECHNOLOGIES irfs4410.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 96A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.22 EUR
50+ 1.46 EUR
63+ 1.14 EUR
66+ 1.09 EUR
Mindestbestellmenge: 33
IRFB4410ZPBF IRFB4410ZPBF INFINEON TECHNOLOGIES irfb4410zpbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 97A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 304 Stücke:
Lieferzeit 14-21 Tag (e)
49+1.49 EUR
59+ 1.23 EUR
64+ 1.13 EUR
68+ 1.06 EUR
Mindestbestellmenge: 49
IRF7530TRPBF IRF7530TRPBF INFINEON TECHNOLOGIES irf7530pbf.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.4A; 1.3W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.4A
Power dissipation: 1.3W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFH5301TRPBF IRFH5301TRPBF INFINEON TECHNOLOGIES irfh5301pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFH5302TRPBF IRFH5302TRPBF INFINEON TECHNOLOGIES irfh5302pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFI131ONPBF irfi1310n.pdf
IRFI131ONPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 45W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
27+2.65 EUR
Mindestbestellmenge: 27
IRFI4110GPBF irfi4110gpbf.pdf
IRFI4110GPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 72A; 61W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 72A
Power dissipation: 61W
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
18+4.18 EUR
20+ 3.68 EUR
27+ 2.7 EUR
28+ 2.56 EUR
Mindestbestellmenge: 18
IRFI4229PBF irfi4229pbf.pdf
IRFI4229PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 19A; 46W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 19A
Power dissipation: 46W
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFI4321PBF irfi4321pbf.pdf
IRFI4321PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 34A; 46W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 34A
Power dissipation: 46W
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
25+2.95 EUR
26+ 2.82 EUR
30+ 2.45 EUR
31+ 2.32 EUR
Mindestbestellmenge: 25
IRFI4410ZPBF IRFI4410ZPBF.pdf
IRFI4410ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 47W; TO220FP
Drain-source voltage: 100V
Drain current: 30A
On-state resistance: 9.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 47W
Polarisation: unipolar
Kind of package: tube
Gate charge: 81nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: THT
Case: TO220FP
auf Bestellung 1056 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
24+3.07 EUR
31+ 2.36 EUR
33+ 2.23 EUR
50+ 2.2 EUR
100+ 2.14 EUR
Mindestbestellmenge: 24
IRFI530NPBF irfi530n.pdf
IRFI530NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 29.3nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFI540NPBF irfi540n.pdf
IRFI540NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 42W; TO220FP
Kind of package: tube
Mounting: THT
Gate charge: 62.7nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220FP
Drain-source voltage: 100V
Drain current: 18A
On-state resistance: 52mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
auf Bestellung 668 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
38+1.89 EUR
48+ 1.5 EUR
76+ 0.94 EUR
81+ 0.89 EUR
Mindestbestellmenge: 38
IPB033N10N5LF IPB033N10N5LF.pdf
IPB033N10N5LF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 179W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 108A
Power dissipation: 179W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
BGSA14GN10E6327XTSA1 Infineon-BGSA14GN10-DataSheet-v03_01-EN.pdf?fileId=5546d46255dd933d0155e9e3e86f09ff
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; TSNP10; 1.8÷3.6VDC; 0.1÷5GHz
Type of integrated circuit: RF switch
Number of channels: 4
Mounting: SMD
Case: TSNP10
Supply voltage: 1.8...3.6V DC
Application: telecommunication
Bandwidth: 0.1...5GHz
Output configuration: SP4T
Produkt ist nicht verfügbar
BSO613SPVGXUMA1 Infineon-BSO613SPVG-DS-v01_04-en.pdf?fileId=db3a304412b407950112b42ae038440c
BSO613SPVGXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.44A; Idm: -13.8A; 2.5W; SO8
Mounting: SMD
Polarisation: unipolar
Power dissipation: 2.5W
Type of transistor: P-MOSFET
On-state resistance: 0.13Ω
Drain current: -3.44A
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -13.8A
Drain-source voltage: -60V
Case: SO8
Produkt ist nicht verfügbar
BSZ105N04NSGATMA1 BSZ105N04NSG.pdf
BSZ105N04NSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 29A; 35W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 29A
Power dissipation: 35W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPD031N03LGATMA1 IPD031N03LG-DTE.pdf
IPD031N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
On-state resistance: 3.1mΩ
Drain-source voltage: 30V
Drain current: 79A
Type of transistor: N-MOSFET
Power dissipation: 94W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
auf Bestellung 2125 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
56+1.29 EUR
61+ 1.17 EUR
81+ 0.89 EUR
86+ 0.84 EUR
Mindestbestellmenge: 56
IPD034N06N3GATMA1 IPD034N06N3G-DTE.pdf
IPD034N06N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Power dissipation: 167W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3.4mΩ
Type of transistor: N-MOSFET
auf Bestellung 1213 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
34+2.13 EUR
40+ 1.79 EUR
52+ 1.4 EUR
55+ 1.32 EUR
500+ 1.27 EUR
Mindestbestellmenge: 34
IPD075N03LGATMA1 IPD075N03LG-DTE.pdf
IPD075N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 47W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
On-state resistance: 7.5mΩ
Drain-source voltage: 30V
Drain current: 35A
Type of transistor: N-MOSFET
Power dissipation: 47W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
75+0.96 EUR
123+ 0.58 EUR
154+ 0.46 EUR
177+ 0.4 EUR
187+ 0.38 EUR
Mindestbestellmenge: 75
IPD135N03LGATMA1 IPD135N03LG-DTE.pdf
IPD135N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 31W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
On-state resistance: 13.5mΩ
Drain-source voltage: 30V
Drain current: 21A
Type of transistor: N-MOSFET
Power dissipation: 31W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
auf Bestellung 879 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
59+1.22 EUR
121+ 0.59 EUR
137+ 0.52 EUR
158+ 0.45 EUR
167+ 0.43 EUR
500+ 0.42 EUR
Mindestbestellmenge: 59
IPD200N15N3GATMA1 Infineon-IPD_BIP_200N15N3-DS-v02_07-en.pdf?fileId=db3a304319c6f18c0119cd1cc23279be
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; Idm: 200A; 150W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 40A
Pulsed drain current: 200A
Power dissipation: 150W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRF8736TRPBF irf8736pbf.pdf
IRF8736TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IR21814SPBF ir2181.pdf
IR21814SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Produkt ist nicht verfügbar
ICE2HS01GXUMA1 ICE2HS01G.pdf
ICE2HS01GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 0.03÷1MHz; PG-DSO-20; SMPS
Type of integrated circuit: PMIC
Frequency: 0.03...1MHz
Case: PG-DSO-20
Mounting: SMD
Operating temperature: -25...125°C
Application: SMPS
Operating voltage: 11...18V DC
Kind of integrated circuit: resonant mode controller
Topology: push-pull
Produkt ist nicht verfügbar
IR2112PBF description ir2112.pdf
IR2112PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -420...200mA
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 205ns
Turn-off time: 145ns
auf Bestellung 78 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
17+4.43 EUR
23+ 3.16 EUR
24+ 2.99 EUR
Mindestbestellmenge: 17
IR2112SPBF description ir2112.pdf
IR2112SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -420...200mA
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 205ns
Turn-off time: 145ns
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
18+3.98 EUR
Mindestbestellmenge: 18
IR2112STRPBF IR2112STRPBF.pdf
IR2112STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -420...200mA
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 205ns
Turn-off time: 145ns
auf Bestellung 1078 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
23+3.25 EUR
33+ 2.23 EUR
35+ 2.1 EUR
500+ 2.07 EUR
Mindestbestellmenge: 23
IRFR4105TRPBF irfr4105pbf.pdf
IRFR4105TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 25A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 25A
Power dissipation: 48W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFR4105ZTRPBF IRFR4105ZTRPBF.pdf
IRFR4105ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Power dissipation: 48W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
AUIRFR4105ZTRL auirfr4105.pdf
AUIRFR4105ZTRL
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Power dissipation: 48W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IR2121PBF ir2121.pdf
IR2121PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; DIP8; -2÷1A; 1W; Ch: 1; 5V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2...1A
Power: 1W
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 5V
Turn-on time: 150ns
Turn-off time: 105ns
auf Bestellung 175 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
18+4.1 EUR
20+ 3.69 EUR
26+ 2.85 EUR
27+ 2.69 EUR
50+ 2.63 EUR
Mindestbestellmenge: 18
2ED020I12-FI 10027685.pdf
2ED020I12-FI
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-side,IGBT gate driver; -2÷1A
Output current: -2...1A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: built-in comparator; built-in operational amplifier; integrated bootstrap functionality
Kind of package: reel; tape
Protection: undervoltage UVP
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: IGBT half-bridge
Voltage class: 1.2kV
Mounting: SMD
Case: PG-DSO-18
Supply voltage: 0...5V; 14...18V
auf Bestellung 871 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
22+3.32 EUR
25+ 2.92 EUR
29+ 2.52 EUR
30+ 2.39 EUR
250+ 2.3 EUR
Mindestbestellmenge: 22
BTS134D BTS134D.pdf
BTS134D
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; SMD; TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-3
On-state resistance: 35mΩ
Technology: HITFET®
Output voltage: 42V
auf Bestellung 1161 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
31+2.32 EUR
35+ 2.07 EUR
44+ 1.64 EUR
46+ 1.56 EUR
500+ 1.52 EUR
Mindestbestellmenge: 31
IKQ75N120CH3XKSA1 IKQ75N120CH3.pdf
IKQ75N120CH3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 256W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
IKQ75N120CS6XKSA1 IKQ75N120CS6XKSA1.pdf
IKQ75N120CS6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 440W; PG-TO247-3-46
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 440W
Case: PG-TO247-3-46
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 530nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
6+12.2 EUR
9+ 8.12 EUR
10+ 7.68 EUR
Mindestbestellmenge: 6
IKQ75N120CT2XKSA1 IKQ75N120CT2.pdf
IKQ75N120CT2XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 237W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 2
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 237W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
IKY75N120CH3XKSA1 IKY75N120CH3.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247PLUS-4; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 256W
Case: TO247PLUS-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Manufacturer series: H3
Turn-on time: 70ns
Turn-off time: 335ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
IKY75N120CS6XKSA1 IKY75N120CS6.pdf
IKY75N120CS6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 440W; TO247PLUS-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 440W
Case: TO247PLUS-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 530nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
BTS4140N  BTS4140N.pdf
BTS4140N 
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 200mA; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 1Ω
Supply voltage: 4.9...60V DC
Technology: Classic PROFET
auf Bestellung 1629 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
44+1.63 EUR
49+ 1.47 EUR
62+ 1.16 EUR
65+ 1.1 EUR
500+ 1.09 EUR
1000+ 1.06 EUR
Mindestbestellmenge: 44
TLE6232GPAUMA2 TLE6232GP.pdf
TLE6232GPAUMA2
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.55÷1.1A; Ch: 6; N-Channel; SMD; FLEX
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Number of channels: 6
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-36
Mounting: SMD
Operating temperature: -40...150°C
Technology: FLEX
Kind of output: N-Channel
Turn-off time: 10µs
Turn-on time: 10µs
Output current: 0.55...1.1A
Produkt ist nicht verfügbar
TLE6251-2G TLE6251-2G.pdf
TLE6251-2G
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; PG-DSO-14; -40÷150°C; 80mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...18V DC
Case: PG-DSO-14
Interface: CAN
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 80mA
Produkt ist nicht verfügbar
IDM02G120C5XTMA1 IDM02G120C5-DTE.pdf
IDM02G120C5XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; PG-TO252-2; 98W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: PG-TO252-2
Max. forward voltage: 1.4V
Leakage current: 1.2µA
Max. forward impulse current: 31A
Kind of package: reel; tape
Power dissipation: 98W
Produkt ist nicht verfügbar
BSZ075N08NS5ATMA1 BSZ075N08NS5-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFB3004PBF irfs3004pbf.pdf
IRFB3004PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.75mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFB3006GPBF irfb3006gpbf.pdf
IRFB3006GPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFB3006PBF description irfb3006pbf.pdf
IRFB3006PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
15+4.8 EUR
24+ 3.06 EUR
25+ 2.89 EUR
50+ 2.77 EUR
Mindestbestellmenge: 15
BSB013NE2LXIXUMA1 BSB013NE2LXI-DTE.pdf
BSB013NE2LXIXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 103A; 57W
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 103A
On-state resistance: 1.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: CanPAK™ MX; MG-WDSON-2
Produkt ist nicht verfügbar
BSB014N04LX3GXUMA1 BSB014N04LX3G-DTE.pdf
BSB014N04LX3GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W
Mounting: SMD
Case: CanPAK™ MX; MG-WDSON-2
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 89W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
IPA032N06N3GXKSA1 IPA032N06N3G-DTE.pdf
IPA032N06N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 41W; TO220FP
Mounting: THT
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220FP
Drain-source voltage: 60V
Drain current: 84A
On-state resistance: 3.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Produkt ist nicht verfügbar
IPP200N15N3GXKSA1 IPP200N15N3G-DTE.pdf
IPP200N15N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 150W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Drain current: 50A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 150V
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
24+3 EUR
27+ 2.69 EUR
28+ 2.56 EUR
Mindestbestellmenge: 24
IPB180N04S4H0ATMA1 IPB180N04S4H0.pdf
IPB180N04S4H0ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 180A; 250W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 173nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
IM69D120V01XTSA1 IM69D120.pdf
IM69D120V01XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC
Interface: PDM
Supply voltage: 1.62...3.6V DC
Case: LLGA-5-1
Mounting: SMD
Kind of integrated circuit: digital microphone
Type of integrated circuit: driver/sensor
Integrated circuit features: MEMS
Produkt ist nicht verfügbar
IM69D130V01XTSA1 IM69D130.pdf
IM69D130V01XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC
Interface: PDM
Supply voltage: 1.62...3.6V DC
Case: LLGA-5-1
Mounting: SMD
Kind of integrated circuit: digital microphone
Type of integrated circuit: driver/sensor
Integrated circuit features: MEMS
Produkt ist nicht verfügbar
IRFB7730PBF IRFB7730PBF.pdf
IRFB7730PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 246A; 375W; TO220AB
Kind of package: tube
Drain-source voltage: 75V
Drain current: 246A
On-state resistance: 2.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Mounting: THT
Case: TO220AB
auf Bestellung 282 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
16+4.56 EUR
18+ 4.1 EUR
22+ 3.29 EUR
24+ 3.1 EUR
Mindestbestellmenge: 16
IRFB7734PBF IRFB7734PBF.pdf
IRFB7734PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 183A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 183A
Power dissipation: 290W
Case: TO220AB
On-state resistance: 2.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRLU120NPBF description irlr120npbf.pdf
IRLU120NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 48W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 48W
Case: IPAK
Gate-source voltage: ±16V
On-state resistance: 0.185Ω
Mounting: THT
Kind of channel: enhanced
Features of semiconductor devices: logic level
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
53+1.37 EUR
90+ 0.8 EUR
Mindestbestellmenge: 53
IRLU3110ZPBF description irlr3110zpbf.pdf
IRLU3110ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 140W
Case: IPAK
Gate-source voltage: ±16V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 34nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
auf Bestellung 155 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
34+2.13 EUR
43+ 1.67 EUR
57+ 1.27 EUR
60+ 1.2 EUR
Mindestbestellmenge: 34
IRLU3410PBF irlr3410pbf.pdf
IRLU3410PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: IPAK
Mounting: THT
Kind of channel: enhanced
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
IRLU7843PBF irlr7843pbf.pdf
IRLU7843PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 161A; 140W; IPAK
Power dissipation: 140W
Polarisation: unipolar
Features of semiconductor devices: logic level
Kind of channel: enhanced
Technology: HEXFET®
Mounting: THT
Case: IPAK
Drain-source voltage: 30V
Drain current: 161A
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
IRLU8743PBF description irlr8743pbf.pdf
IRLU8743PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 160A; 135W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 160A
Power dissipation: 135W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 39nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
43+1.67 EUR
81+ 0.89 EUR
85+ 0.84 EUR
Mindestbestellmenge: 43
IRFB4410PBF description irfs4410.pdf
IRFB4410PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 96A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
33+2.22 EUR
50+ 1.46 EUR
63+ 1.14 EUR
66+ 1.09 EUR
Mindestbestellmenge: 33
IRFB4410ZPBF description irfb4410zpbf.pdf
IRFB4410ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 97A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 304 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
49+1.49 EUR
59+ 1.23 EUR
64+ 1.13 EUR
68+ 1.06 EUR
Mindestbestellmenge: 49
IRF7530TRPBF irf7530pbf.pdf
IRF7530TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.4A; 1.3W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.4A
Power dissipation: 1.3W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFH5301TRPBF irfh5301pbf.pdf
IRFH5301TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFH5302TRPBF irfh5302pbf.pdf
IRFH5302TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
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