IRFH5302TRPBF Infineon Technologies
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4000+ | 0.58 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRFH5302TRPBF Infineon Technologies
Description: MOSFET N-CH 30V 32A/100A PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V, Power Dissipation (Max): 3.6W (Ta), 100W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 100µA, Supplier Device Package: PQFN (5x6) Single Die, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 15 V.
Weitere Produktangebote IRFH5302TRPBF nach Preis ab 0.46 EUR bis 1.92 EUR
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IRFH5302TRPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 30V 32A 8-Pin PQFN EP T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFH5302TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 32A 8-Pin PQFN EP T/R |
auf Bestellung 7790 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFH5302TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 32A 8-Pin PQFN EP T/R |
auf Bestellung 7790 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFH5302TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 32A 8-Pin PQFN EP T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFH5302TRPBF | Hersteller : Infineon Technologies |
MOSFET 30V 1 N-CH HEXFET 2.1mOhms 29nC |
auf Bestellung 9757 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFH5302TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 32A/100A PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 100µA Supplier Device Package: PQFN (5x6) Single Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 15 V |
auf Bestellung 3715 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFH5302TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 32A 8-Pin PQFN EP T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRFH5302TRPBF | Hersteller : International Rectifier Corporation |
HEXFET Power MOSFET, 30V, 100A, 0,0021 Ohm, PQFN-8 |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFH5302TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 32A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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IRFH5302TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 32A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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IRFH5302TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6 Mounting: SMD Drain-source voltage: 30V Drain current: 32A Type of transistor: N-MOSFET Power dissipation: 3.6W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhanced Case: PQFN5X6 Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
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IRFH5302TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 32A/100A PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 100µA Supplier Device Package: PQFN (5x6) Single Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 15 V |
Produkt ist nicht verfügbar |
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IRFH5302TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6 Mounting: SMD Drain-source voltage: 30V Drain current: 32A Type of transistor: N-MOSFET Power dissipation: 3.6W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhanced Case: PQFN5X6 |
Produkt ist nicht verfügbar |