![IRFH5302TRPBF IRFH5302TRPBF](https://static6.arrow.com/aropdfconversion/arrowimages/5f366f1118925e40e5566c7aeed5f3b978bb387b/pqfn_5x6_b.jpg)
IRFH5302TRPBF Infineon Technologies
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4000+ | 0.58 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRFH5302TRPBF Infineon Technologies
Description: MOSFET N-CH 30V 32A/100A PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V, Power Dissipation (Max): 3.6W (Ta), 100W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 100µA, Supplier Device Package: PQFN (5x6) Single Die, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 15 V.
Weitere Produktangebote IRFH5302TRPBF nach Preis ab 0.46 EUR bis 1.92 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IRFH5302TRPBF | Hersteller : Infineon Technologies |
![]() |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
IRFH5302TRPBF | Hersteller : Infineon Technologies |
![]() |
auf Bestellung 7790 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
IRFH5302TRPBF | Hersteller : Infineon Technologies |
![]() |
auf Bestellung 7790 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
IRFH5302TRPBF | Hersteller : Infineon Technologies |
![]() |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
IRFH5302TRPBF | Hersteller : Infineon Technologies |
![]() |
auf Bestellung 9757 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
IRFH5302TRPBF | Hersteller : Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 100µA Supplier Device Package: PQFN (5x6) Single Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 15 V |
auf Bestellung 3715 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
IRFH5302TRPBF | Hersteller : Infineon Technologies |
![]() |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
IRFH5302TRPBF | Hersteller : International Rectifier Corporation |
![]() |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
![]() |
IRFH5302TRPBF | Hersteller : Infineon Technologies |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||||
![]() |
IRFH5302TRPBF | Hersteller : Infineon Technologies |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||||
![]() |
IRFH5302TRPBF | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6 Mounting: SMD Drain-source voltage: 30V Drain current: 32A Type of transistor: N-MOSFET Power dissipation: 3.6W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhanced Case: PQFN5X6 Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||||
![]() |
IRFH5302TRPBF | Hersteller : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 100µA Supplier Device Package: PQFN (5x6) Single Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 15 V |
Produkt ist nicht verfügbar |
|||||||||||||||||
![]() |
IRFH5302TRPBF | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6 Mounting: SMD Drain-source voltage: 30V Drain current: 32A Type of transistor: N-MOSFET Power dissipation: 3.6W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhanced Case: PQFN5X6 |
Produkt ist nicht verfügbar |