Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (140106) > Seite 2302 nach 2336
Foto | Bezeichnung | Hersteller | Beschreibung |
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IRFS4115TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 70A; Idm: 396A; 375W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 70A Pulsed drain current: 396A Power dissipation: 375W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 12.1mΩ Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRFS4127TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 72A; 375W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 72A Power dissipation: 375W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRF1310NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 160W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 42A Power dissipation: 160W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Gate charge: 73.3nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 161 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF1310NSTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 140A; 160W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 30A Pulsed drain current: 140A Power dissipation: 160W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IFX9201SGAUMA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; H-bridge; IMC,motor controller; SPI; PG-DSO-12-17; 6A Type of integrated circuit: driver Topology: H-bridge Kind of integrated circuit: IMC; motor controller Interface: SPI Case: PG-DSO-12-17 Output current: 6A Number of channels: 2 Integrated circuit features: current monitoring; fault detection; internal temperature sensor Mounting: SMD On-state resistance: 0.1Ω Operating temperature: -40...125°C Operating voltage: 5...36V Frequency: 20kHz Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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IDP40E65D2XKSA1 | INFINEON TECHNOLOGIES |
Category: THT universal diodes Description: Diode: rectifying; THT; 650V; 40A; tube; TO220-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 650V Load current: 40A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Case: TO220-2 |
auf Bestellung 286 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP149H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 0.53A; Idm: 2.6A; 1.8W; SOT223 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 0.53A Pulsed drain current: 2.6A Power dissipation: 1.8W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of channel: depleted |
auf Bestellung 1968 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP149H6906XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 200V; 0.53A; Idm: 2.6A Type of transistor: N-MOSFET Technology: SIPMOS® Polarisation: unipolar Drain-source voltage: 200V Drain current: 0.53A Pulsed drain current: 2.6A Power dissipation: 1.8W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of channel: depleted |
Produkt ist nicht verfügbar |
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IRFB7430PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 409A; 375W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 409A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.3mΩ Mounting: THT Gate charge: 300nC Kind of package: tube Kind of channel: enhanced Trade name: StrongIRFET |
auf Bestellung 191 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFHM8329TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 2.6W; PQFN3.3X3.3 Mounting: SMD Drain-source voltage: 30V Drain current: 16A Type of transistor: N-MOSFET Power dissipation: 2.6W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhanced Case: PQFN3.3X3.3 |
Produkt ist nicht verfügbar |
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IRF7805TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8 Technology: HEXFET® Case: SO8 Mounting: SMD Kind of package: reel Power dissipation: 2.5W Drain-source voltage: 30V Polarisation: unipolar Kind of channel: enhanced Type of transistor: N-MOSFET Drain current: 13A |
Produkt ist nicht verfügbar |
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IRF7805ZTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 2.5W; SO8 Technology: HEXFET® Case: SO8 Mounting: SMD Kind of package: reel Power dissipation: 2.5W Drain-source voltage: 30V Polarisation: unipolar Kind of channel: enhanced Type of transistor: N-MOSFET Drain current: 16A |
Produkt ist nicht verfügbar |
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BCR555E6327 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ Mounting: SMD Power dissipation: 0.33W Polarisation: bipolar Type of transistor: PNP Collector current: 0.5A Collector-emitter voltage: 50V Frequency: 150MHz Case: SOT23 Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ |
auf Bestellung 3509 Stücke: Lieferzeit 14-21 Tag (e) |
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SPD04N50C3 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 560V; 4.5A; 42W; PG-TO252-3 Technology: CoolMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Polarisation: unipolar On-state resistance: 0.95Ω Drain-source voltage: 560V Drain current: 4.5A Case: PG-TO252-3 Power dissipation: 42W Mounting: SMD Type of transistor: N-MOSFET |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF3808PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 330W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 140A Power dissipation: 330W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF3808STRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 550A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 75A Pulsed drain current: 550A Power dissipation: 200W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Kind of channel: enhanced |
auf Bestellung 586 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF3808STRRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 106A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 106A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IR4311MTRPBF | INFINEON TECHNOLOGIES |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; Pout: 35W; Ch: 1; Amp.class: D; PQFN5X6 Type of integrated circuit: audio amplifier Case: PQFN5X6 Mounting: SMD Number of channels: 1 Amplifier class: D Output power: 35W |
Produkt ist nicht verfügbar |
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IR4312MTRPBF | INFINEON TECHNOLOGIES |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; Pout: 35W; Ch: 2; Amp.class: D; PQFN7X7 Type of integrated circuit: audio amplifier Case: PQFN7X7 Mounting: SMD Number of channels: 2 Amplifier class: D Output power: 35W |
Produkt ist nicht verfügbar |
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IPB072N15N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 100A; 300W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 150V Drain current: 100A Power dissipation: 300W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 7.2mΩ Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRFB52N15DPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 60A Power dissipation: 320W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 32mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 41 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFS52N15DTRLP | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 60A Power dissipation: 320W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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BTS5215L | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 3.7A Number of channels: 2 Kind of output: N-Channel Mounting: SMD Case: BSOP12 On-state resistance: 70mΩ Supply voltage: 5.5...40V DC Technology: Classic PROFET |
auf Bestellung 471 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD70R900P7SAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 30.5W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 700V Drain current: 3.5A Power dissipation: 30.5W Case: PG-TO252-3 Gate-source voltage: ±16V On-state resistance: 0.9Ω Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IPP60R080P7 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Power dissipation: 129W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SI4435DYTRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -50A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -6.4A Pulsed drain current: -50A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Kind of channel: enhanced |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFU4615PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; IPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 33A Power dissipation: 144W Case: IPAK Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: THT Gate charge: 26nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRF2805PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 175A; 330W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 175A Power dissipation: 330W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.7mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 361 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF2805STRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 135A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 135A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IGB50N65H5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 53.7A; 135W; D2PAK; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 53.7A Power dissipation: 135W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: SMD Gate charge: 0.12µC Kind of package: reel; tape Manufacturer series: H5 Turn-on time: 26ns Turn-off time: 147ns |
Produkt ist nicht verfügbar |
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IGB50N65S5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 63A; 135W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 63A Power dissipation: 135W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: SMD Gate charge: 0.12µC Kind of package: reel; tape Turn-on time: 50ns Turn-off time: 199ns |
Produkt ist nicht verfügbar |
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IGW50N65F5FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 80A; 270W; TO247-3; F5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 270W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Manufacturer series: F5 |
Produkt ist nicht verfügbar |
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IGW50N65H5FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 305W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
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IGZ50N65H5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 54A Power dissipation: 136W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 109nC Kind of package: tube Manufacturer series: H5 Turn-on time: 27ns Turn-off time: 271ns |
Produkt ist nicht verfügbar |
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IHW50N65R5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 141W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 230nC Kind of package: tube Turn-on time: 50ns Turn-off time: 218ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) |
auf Bestellung 218 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW50N65EH5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 138W; TO247-3; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 138W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 0.12µC Kind of package: tube Manufacturer series: H5 Turn-on time: 54ns Turn-off time: 207ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
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IKW50N65ES5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60.5A; 137W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 60.5A Power dissipation: 137W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 47ns Turn-off time: 161ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
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IKW50N65F5FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; F5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 305W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Manufacturer series: F5 Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
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IKW50N65H5FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 305W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Manufacturer series: H5 Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 45 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW50N65WR5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 141W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 230nC Kind of package: tube Turn-on time: 79ns Turn-off time: 420ns Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 102 Stücke: Lieferzeit 14-21 Tag (e) |
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IKZ50N65ES5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60.5A; 137W; TO247-4 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 60.5A Power dissipation: 137W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 58ns Turn-off time: 326ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
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IKZ50N65NH5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 54A Power dissipation: 136W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Kind of package: tube Manufacturer series: H5 Turn-on time: 30ns Turn-off time: 275ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
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IPB017N10N5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; PG-TO263-7 Case: PG-TO263-7 Mounting: SMD Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 180A On-state resistance: 1.7mΩ Type of transistor: N-MOSFET Power dissipation: 375W Polarisation: unipolar |
Produkt ist nicht verfügbar |
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BTS3410GXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 1.3A; Ch: 2; N-Channel; SMD; PG-DSO-8 Mounting: SMD On-state resistance: 0.2Ω Output current: 1.3A Type of integrated circuit: power switch Number of channels: 2 Kind of output: N-Channel Power dissipation: 0.8W Technology: HITFET® Kind of integrated circuit: low-side Case: PG-DSO-8 |
auf Bestellung 2687 Stücke: Lieferzeit 14-21 Tag (e) |
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SPD50P03LGBTMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 150W; PG-TO252-5 Type of transistor: P-MOSFET Technology: OptiMOS™ P Polarisation: unipolar Drain-source voltage: -30V Drain current: -50A Power dissipation: 150W Case: PG-TO252-5 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRLR3705ZTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 89A Power dissipation: 130W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |
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BTS3408GXUMA2 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 550mA; Ch: 2; N-Channel; SMD; PG-DSO-8 Mounting: SMD Operating temperature: -40...150°C Kind of output: N-Channel Power dissipation: 0.88W Technology: HITFET® Kind of integrated circuit: low-side Case: PG-DSO-8 Supply voltage: 4.5...60V DC On-state resistance: 0.48Ω Turn-on time: 2µs Turn-off time: 2µs Output voltage: 60V Output current: 0.55A Type of integrated circuit: power switch Number of channels: 2 |
auf Bestellung 552 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2085STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -1...1A Power: 1W Number of channels: 2 Supply voltage: 10...15V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 100V |
Produkt ist nicht verfügbar |
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AUIR2085STR | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -1...1A Power: 625mW Number of channels: 2 Supply voltage: 10...15V DC Mounting: SMD Kind of package: reel; tape Voltage class: 100V |
Produkt ist nicht verfügbar |
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IRLR2703TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 96A; 45W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 16A Pulsed drain current: 96A Power dissipation: 45W Case: DPAK Gate-source voltage: ±16V On-state resistance: 45mΩ Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRLR2705TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 20A; Idm: 110A; 68W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 20A Pulsed drain current: 110A Power dissipation: 68W Case: DPAK Gate-source voltage: ±16V On-state resistance: 40mΩ Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRLR2705TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 28A; 68W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 28A Power dissipation: 68W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |
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IRLR3103TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 46A; 69W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 46A Power dissipation: 69W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |
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IRLR3105TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 25A; 57W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 25A Power dissipation: 57W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |
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IRLR3110ZTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 250A; 140W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 45A Pulsed drain current: 250A Power dissipation: 140W Case: DPAK Gate-source voltage: ±16V On-state resistance: 14mΩ Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRLR3114ZTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 130A; 140W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 130A Power dissipation: 140W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |
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IHW30N160R5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.6kV; 39A; 131.5W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 1.6kV Collector current: 39A Power dissipation: 131.5W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 205nC Kind of package: tube Turn-off time: 411ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) |
auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) |
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BSO201SPHXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -12A; 1.6W; PG-DSO-8 Mounting: SMD Polarisation: unipolar Power dissipation: 1.6W Type of transistor: P-MOSFET On-state resistance: 20mΩ Drain current: -12A Technology: OptiMOS™ P Kind of channel: enhanced Gate-source voltage: ±12V Drain-source voltage: -20V Case: PG-DSO-8 |
Produkt ist nicht verfügbar |
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BSO203PHXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 1.6W; PG-DSO-8 Mounting: SMD Polarisation: unipolar Power dissipation: 1.6W Type of transistor: P-MOSFET On-state resistance: 21mΩ Drain current: -7A Technology: OptiMOS™ P Kind of channel: enhanced Gate-source voltage: ±12V Drain-source voltage: -20V Case: PG-DSO-8 |
Produkt ist nicht verfügbar |
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BSO203SPHXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 1.6W; PG-DSO-8 Mounting: SMD Polarisation: unipolar Power dissipation: 1.6W Type of transistor: P-MOSFET On-state resistance: 21mΩ Drain current: -7A Technology: OptiMOS™ P Kind of channel: enhanced Gate-source voltage: ±12V Drain-source voltage: -20V Case: PG-DSO-8 |
Produkt ist nicht verfügbar |
IRFS4115TRLPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 70A; Idm: 396A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 70A
Pulsed drain current: 396A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12.1mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 70A; Idm: 396A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 70A
Pulsed drain current: 396A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12.1mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFS4127TRLPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 72A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 72A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 72A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 72A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRF1310NPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 73.3nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 73.3nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 161 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
43+ | 1.67 EUR |
51+ | 1.42 EUR |
84+ | 0.86 EUR |
88+ | 0.82 EUR |
IRF1310NSTRLPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 140A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Pulsed drain current: 140A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 140A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Pulsed drain current: 140A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IFX9201SGAUMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; IMC,motor controller; SPI; PG-DSO-12-17; 6A
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: IMC; motor controller
Interface: SPI
Case: PG-DSO-12-17
Output current: 6A
Number of channels: 2
Integrated circuit features: current monitoring; fault detection; internal temperature sensor
Mounting: SMD
On-state resistance: 0.1Ω
Operating temperature: -40...125°C
Operating voltage: 5...36V
Frequency: 20kHz
Kind of package: reel; tape
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; IMC,motor controller; SPI; PG-DSO-12-17; 6A
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: IMC; motor controller
Interface: SPI
Case: PG-DSO-12-17
Output current: 6A
Number of channels: 2
Integrated circuit features: current monitoring; fault detection; internal temperature sensor
Mounting: SMD
On-state resistance: 0.1Ω
Operating temperature: -40...125°C
Operating voltage: 5...36V
Frequency: 20kHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
IDP40E65D2XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 40A; tube; TO220-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Case: TO220-2
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 40A; tube; TO220-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Case: TO220-2
auf Bestellung 286 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 2.57 EUR |
37+ | 1.97 EUR |
39+ | 1.87 EUR |
50+ | 1.86 EUR |
100+ | 1.79 EUR |
BSP149H6327XTSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.53A; Idm: 2.6A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.53A
Pulsed drain current: 2.6A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: depleted
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.53A; Idm: 2.6A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.53A
Pulsed drain current: 2.6A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: depleted
auf Bestellung 1968 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
57+ | 1.26 EUR |
69+ | 1.04 EUR |
112+ | 0.64 EUR |
118+ | 0.61 EUR |
1000+ | 0.6 EUR |
BSP149H6906XTSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 200V; 0.53A; Idm: 2.6A
Type of transistor: N-MOSFET
Technology: SIPMOS®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.53A
Pulsed drain current: 2.6A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: depleted
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 200V; 0.53A; Idm: 2.6A
Type of transistor: N-MOSFET
Technology: SIPMOS®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.53A
Pulsed drain current: 2.6A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: depleted
Produkt ist nicht verfügbar
IRFB7430PBF |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 409A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 409A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhanced
Trade name: StrongIRFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 409A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 409A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhanced
Trade name: StrongIRFET
auf Bestellung 191 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
16+ | 4.75 EUR |
17+ | 4.26 EUR |
22+ | 3.26 EUR |
24+ | 3.09 EUR |
IRFHM8329TRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 2.6W; PQFN3.3X3.3
Mounting: SMD
Drain-source voltage: 30V
Drain current: 16A
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Case: PQFN3.3X3.3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 2.6W; PQFN3.3X3.3
Mounting: SMD
Drain-source voltage: 30V
Drain current: 16A
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Case: PQFN3.3X3.3
Produkt ist nicht verfügbar
IRF7805TRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8
Technology: HEXFET®
Case: SO8
Mounting: SMD
Kind of package: reel
Power dissipation: 2.5W
Drain-source voltage: 30V
Polarisation: unipolar
Kind of channel: enhanced
Type of transistor: N-MOSFET
Drain current: 13A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8
Technology: HEXFET®
Case: SO8
Mounting: SMD
Kind of package: reel
Power dissipation: 2.5W
Drain-source voltage: 30V
Polarisation: unipolar
Kind of channel: enhanced
Type of transistor: N-MOSFET
Drain current: 13A
Produkt ist nicht verfügbar
IRF7805ZTRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 2.5W; SO8
Technology: HEXFET®
Case: SO8
Mounting: SMD
Kind of package: reel
Power dissipation: 2.5W
Drain-source voltage: 30V
Polarisation: unipolar
Kind of channel: enhanced
Type of transistor: N-MOSFET
Drain current: 16A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 2.5W; SO8
Technology: HEXFET®
Case: SO8
Mounting: SMD
Kind of package: reel
Power dissipation: 2.5W
Drain-source voltage: 30V
Polarisation: unipolar
Kind of channel: enhanced
Type of transistor: N-MOSFET
Drain current: 16A
Produkt ist nicht verfügbar
BCR555E6327 |
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Mounting: SMD
Power dissipation: 0.33W
Polarisation: bipolar
Type of transistor: PNP
Collector current: 0.5A
Collector-emitter voltage: 50V
Frequency: 150MHz
Case: SOT23
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Mounting: SMD
Power dissipation: 0.33W
Polarisation: bipolar
Type of transistor: PNP
Collector current: 0.5A
Collector-emitter voltage: 50V
Frequency: 150MHz
Case: SOT23
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 3509 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
496+ | 0.14 EUR |
646+ | 0.11 EUR |
855+ | 0.084 EUR |
905+ | 0.079 EUR |
3000+ | 0.078 EUR |
SPD04N50C3 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 4.5A; 42W; PG-TO252-3
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
On-state resistance: 0.95Ω
Drain-source voltage: 560V
Drain current: 4.5A
Case: PG-TO252-3
Power dissipation: 42W
Mounting: SMD
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 4.5A; 42W; PG-TO252-3
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
On-state resistance: 0.95Ω
Drain-source voltage: 560V
Drain current: 4.5A
Case: PG-TO252-3
Power dissipation: 42W
Mounting: SMD
Type of transistor: N-MOSFET
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 23.84 EUR |
IRF3808PBF |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 2.7 EUR |
32+ | 2.25 EUR |
40+ | 1.79 EUR |
IRF3808STRLPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 550A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 75A
Pulsed drain current: 550A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 550A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 75A
Pulsed drain current: 550A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 586 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 3.16 EUR |
43+ | 1.69 EUR |
45+ | 1.6 EUR |
IRF3808STRRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 106A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 106A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 106A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 106A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IR4311MTRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 35W; Ch: 1; Amp.class: D; PQFN5X6
Type of integrated circuit: audio amplifier
Case: PQFN5X6
Mounting: SMD
Number of channels: 1
Amplifier class: D
Output power: 35W
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 35W; Ch: 1; Amp.class: D; PQFN5X6
Type of integrated circuit: audio amplifier
Case: PQFN5X6
Mounting: SMD
Number of channels: 1
Amplifier class: D
Output power: 35W
Produkt ist nicht verfügbar
IR4312MTRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 35W; Ch: 2; Amp.class: D; PQFN7X7
Type of integrated circuit: audio amplifier
Case: PQFN7X7
Mounting: SMD
Number of channels: 2
Amplifier class: D
Output power: 35W
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 35W; Ch: 2; Amp.class: D; PQFN7X7
Type of integrated circuit: audio amplifier
Case: PQFN7X7
Mounting: SMD
Number of channels: 2
Amplifier class: D
Output power: 35W
Produkt ist nicht verfügbar
IPB072N15N3GATMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 100A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 100A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFB52N15DPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 2.92 EUR |
37+ | 1.97 EUR |
39+ | 1.87 EUR |
IRFS52N15DTRLP |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
BTS5215L |
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3.7A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: BSOP12
On-state resistance: 70mΩ
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3.7A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: BSOP12
On-state resistance: 70mΩ
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
auf Bestellung 471 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 4.1 EUR |
25+ | 2.89 EUR |
27+ | 2.73 EUR |
IPD70R900P7SAUMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 30.5W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.5A
Power dissipation: 30.5W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 30.5W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.5A
Power dissipation: 30.5W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPP60R080P7 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
SI4435DYTRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -50A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.4A
Pulsed drain current: -50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -50A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.4A
Pulsed drain current: -50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
72+ | 1 EUR |
89+ | 0.81 EUR |
167+ | 0.43 EUR |
177+ | 0.41 EUR |
2000+ | 0.39 EUR |
IRFU4615PBF |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 33A
Power dissipation: 144W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 26nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 33A
Power dissipation: 144W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 26nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRF2805PBF |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 175A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 175A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 175A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 175A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 361 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
35+ | 2.04 EUR |
39+ | 1.86 EUR |
44+ | 1.64 EUR |
50+ | 1.43 EUR |
54+ | 1.34 EUR |
IRF2805STRLPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 135A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 135A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 135A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 135A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IGB50N65H5ATMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 53.7A; 135W; D2PAK; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 53.7A
Power dissipation: 135W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Manufacturer series: H5
Turn-on time: 26ns
Turn-off time: 147ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 53.7A; 135W; D2PAK; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 53.7A
Power dissipation: 135W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Manufacturer series: H5
Turn-on time: 26ns
Turn-off time: 147ns
Produkt ist nicht verfügbar
IGB50N65S5ATMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 63A; 135W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 63A
Power dissipation: 135W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Turn-on time: 50ns
Turn-off time: 199ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 63A; 135W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 63A
Power dissipation: 135W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Turn-on time: 50ns
Turn-off time: 199ns
Produkt ist nicht verfügbar
IGW50N65F5FKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 270W; TO247-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: F5
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 270W; TO247-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: F5
Produkt ist nicht verfügbar
IGW50N65H5FKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
IGZ50N65H5XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 136W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 109nC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 27ns
Turn-off time: 271ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 136W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 109nC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 27ns
Turn-off time: 271ns
Produkt ist nicht verfügbar
IHW50N65R5XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 50ns
Turn-off time: 218ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 50ns
Turn-off time: 218ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 218 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 6.06 EUR |
14+ | 5.35 EUR |
16+ | 4.66 EUR |
17+ | 4.4 EUR |
IKW50N65EH5XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 138W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 138W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 54ns
Turn-off time: 207ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 138W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 138W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 54ns
Turn-off time: 207ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
IKW50N65ES5XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60.5A; 137W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 60.5A
Power dissipation: 137W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 47ns
Turn-off time: 161ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60.5A; 137W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 60.5A
Power dissipation: 137W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 47ns
Turn-off time: 161ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
IKW50N65F5FKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: F5
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: F5
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
IKW50N65H5FKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 6.11 EUR |
18+ | 4.06 EUR |
19+ | 3.85 EUR |
30+ | 3.72 EUR |
IKW50N65WR5XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 79ns
Turn-off time: 420ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 79ns
Turn-off time: 420ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 102 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 6.99 EUR |
12+ | 6.29 EUR |
15+ | 4.83 EUR |
16+ | 4.58 EUR |
IKZ50N65ES5XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60.5A; 137W; TO247-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 60.5A
Power dissipation: 137W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 58ns
Turn-off time: 326ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60.5A; 137W; TO247-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 60.5A
Power dissipation: 137W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 58ns
Turn-off time: 326ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
IKZ50N65NH5XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 136W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Kind of package: tube
Manufacturer series: H5
Turn-on time: 30ns
Turn-off time: 275ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 136W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Kind of package: tube
Manufacturer series: H5
Turn-on time: 30ns
Turn-off time: 275ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
IPB017N10N5ATMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 180A
On-state resistance: 1.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 180A
On-state resistance: 1.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Produkt ist nicht verfügbar
BTS3410GXUMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 2; N-Channel; SMD; PG-DSO-8
Mounting: SMD
On-state resistance: 0.2Ω
Output current: 1.3A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Power dissipation: 0.8W
Technology: HITFET®
Kind of integrated circuit: low-side
Case: PG-DSO-8
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 2; N-Channel; SMD; PG-DSO-8
Mounting: SMD
On-state resistance: 0.2Ω
Output current: 1.3A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Power dissipation: 0.8W
Technology: HITFET®
Kind of integrated circuit: low-side
Case: PG-DSO-8
auf Bestellung 2687 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
35+ | 2.1 EUR |
37+ | 1.96 EUR |
46+ | 1.56 EUR |
49+ | 1.47 EUR |
250+ | 1.43 EUR |
SPD50P03LGBTMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 150W; PG-TO252-5
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Power dissipation: 150W
Case: PG-TO252-5
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 150W; PG-TO252-5
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Power dissipation: 150W
Case: PG-TO252-5
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRLR3705ZTRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 130W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 130W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
BTS3408GXUMA2 |
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 550mA; Ch: 2; N-Channel; SMD; PG-DSO-8
Mounting: SMD
Operating temperature: -40...150°C
Kind of output: N-Channel
Power dissipation: 0.88W
Technology: HITFET®
Kind of integrated circuit: low-side
Case: PG-DSO-8
Supply voltage: 4.5...60V DC
On-state resistance: 0.48Ω
Turn-on time: 2µs
Turn-off time: 2µs
Output voltage: 60V
Output current: 0.55A
Type of integrated circuit: power switch
Number of channels: 2
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 550mA; Ch: 2; N-Channel; SMD; PG-DSO-8
Mounting: SMD
Operating temperature: -40...150°C
Kind of output: N-Channel
Power dissipation: 0.88W
Technology: HITFET®
Kind of integrated circuit: low-side
Case: PG-DSO-8
Supply voltage: 4.5...60V DC
On-state resistance: 0.48Ω
Turn-on time: 2µs
Turn-off time: 2µs
Output voltage: 60V
Output current: 0.55A
Type of integrated circuit: power switch
Number of channels: 2
auf Bestellung 552 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
21+ | 3.55 EUR |
32+ | 2.27 EUR |
34+ | 2.14 EUR |
100+ | 2.06 EUR |
IR2085STRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -1...1A
Power: 1W
Number of channels: 2
Supply voltage: 10...15V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 100V
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -1...1A
Power: 1W
Number of channels: 2
Supply voltage: 10...15V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 100V
Produkt ist nicht verfügbar
AUIR2085STR |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -1...1A
Power: 625mW
Number of channels: 2
Supply voltage: 10...15V DC
Mounting: SMD
Kind of package: reel; tape
Voltage class: 100V
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -1...1A
Power: 625mW
Number of channels: 2
Supply voltage: 10...15V DC
Mounting: SMD
Kind of package: reel; tape
Voltage class: 100V
Produkt ist nicht verfügbar
IRLR2703TRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 96A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Pulsed drain current: 96A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 45mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 96A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Pulsed drain current: 96A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 45mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRLR2705TRLPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 20A; Idm: 110A; 68W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 20A
Pulsed drain current: 110A
Power dissipation: 68W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 40mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 20A; Idm: 110A; 68W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 20A
Pulsed drain current: 110A
Power dissipation: 68W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 40mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRLR2705TRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 28A; 68W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 28A
Power dissipation: 68W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 28A; 68W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 28A
Power dissipation: 68W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
IRLR3103TRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; 69W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Power dissipation: 69W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; 69W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Power dissipation: 69W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
IRLR3105TRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 25A; 57W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 25A
Power dissipation: 57W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 25A; 57W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 25A
Power dissipation: 57W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
IRLR3110ZTRLPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 250A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Pulsed drain current: 250A
Power dissipation: 140W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 14mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 250A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Pulsed drain current: 250A
Power dissipation: 140W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 14mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRLR3114ZTRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
IHW30N160R5XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.6kV; 39A; 131.5W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.6kV
Collector current: 39A
Power dissipation: 131.5W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Turn-off time: 411ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.6kV; 39A; 131.5W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.6kV
Collector current: 39A
Power dissipation: 131.5W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Turn-off time: 411ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 5.78 EUR |
18+ | 4.13 EUR |
19+ | 3.9 EUR |
BSO201SPHXUMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -12A; 1.6W; PG-DSO-8
Mounting: SMD
Polarisation: unipolar
Power dissipation: 1.6W
Type of transistor: P-MOSFET
On-state resistance: 20mΩ
Drain current: -12A
Technology: OptiMOS™ P
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: -20V
Case: PG-DSO-8
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -12A; 1.6W; PG-DSO-8
Mounting: SMD
Polarisation: unipolar
Power dissipation: 1.6W
Type of transistor: P-MOSFET
On-state resistance: 20mΩ
Drain current: -12A
Technology: OptiMOS™ P
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: -20V
Case: PG-DSO-8
Produkt ist nicht verfügbar
BSO203PHXUMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 1.6W; PG-DSO-8
Mounting: SMD
Polarisation: unipolar
Power dissipation: 1.6W
Type of transistor: P-MOSFET
On-state resistance: 21mΩ
Drain current: -7A
Technology: OptiMOS™ P
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: -20V
Case: PG-DSO-8
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 1.6W; PG-DSO-8
Mounting: SMD
Polarisation: unipolar
Power dissipation: 1.6W
Type of transistor: P-MOSFET
On-state resistance: 21mΩ
Drain current: -7A
Technology: OptiMOS™ P
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: -20V
Case: PG-DSO-8
Produkt ist nicht verfügbar
BSO203SPHXUMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 1.6W; PG-DSO-8
Mounting: SMD
Polarisation: unipolar
Power dissipation: 1.6W
Type of transistor: P-MOSFET
On-state resistance: 21mΩ
Drain current: -7A
Technology: OptiMOS™ P
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: -20V
Case: PG-DSO-8
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 1.6W; PG-DSO-8
Mounting: SMD
Polarisation: unipolar
Power dissipation: 1.6W
Type of transistor: P-MOSFET
On-state resistance: 21mΩ
Drain current: -7A
Technology: OptiMOS™ P
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: -20V
Case: PG-DSO-8
Produkt ist nicht verfügbar