IGZ50N65H5XKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 85A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/250ns
Switching Energy: 410µJ (on), 190µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 109 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 273 W
Description: IGBT TRENCH 650V 85A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/250ns
Switching Energy: 410µJ (on), 190µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 109 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 273 W
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 9.56 EUR |
30+ | 5.43 EUR |
120+ | 4.52 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IGZ50N65H5XKSA1 Infineon Technologies
Description: IGBT TRENCH 650V 85A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Supplier Device Package: PG-TO247-4, IGBT Type: Trench, Td (on/off) @ 25°C: 20ns/250ns, Switching Energy: 410µJ (on), 190µJ (off), Test Condition: 400V, 25A, 12Ohm, 15V, Gate Charge: 109 nC, Current - Collector (Ic) (Max): 85 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 273 W.
Weitere Produktangebote IGZ50N65H5XKSA1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
IGZ50N65H5XKSA1 | Hersteller : Infineon Technologies | Trans IGBT Chip N-CH 650V 85A 273000mW 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
||
IGZ50N65H5XKSA1 | Hersteller : Infineon Technologies | Trans IGBT Chip N-CH 650V 85A 273W 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
||
IGZ50N65H5XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 54A Power dissipation: 136W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 109nC Kind of package: tube Manufacturer series: H5 Turn-on time: 27ns Turn-off time: 271ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
IGZ50N65H5XKSA1 | Hersteller : Infineon Technologies | IGBTs IGBT PRODUCTS |
Produkt ist nicht verfügbar |
||
IGZ50N65H5XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 54A Power dissipation: 136W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 109nC Kind of package: tube Manufacturer series: H5 Turn-on time: 27ns Turn-off time: 271ns |
Produkt ist nicht verfügbar |