BCR555E6327 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Mounting: SMD
Power dissipation: 0.33W
Polarisation: bipolar
Type of transistor: PNP
Collector current: 0.5A
Collector-emitter voltage: 50V
Frequency: 150MHz
Case: SOT23
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Mounting: SMD
Power dissipation: 0.33W
Polarisation: bipolar
Type of transistor: PNP
Collector current: 0.5A
Collector-emitter voltage: 50V
Frequency: 150MHz
Case: SOT23
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3509 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
496+ | 0.14 EUR |
646+ | 0.11 EUR |
855+ | 0.084 EUR |
905+ | 0.079 EUR |
3000+ | 0.078 EUR |
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Produktbewertung abgeben
Technische Details BCR555E6327 INFINEON TECHNOLOGIES
Description: BIPOLAR DIGITAL TRANSISTOR, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V, Supplier Device Package: PG-SOT23-3-3, Part Status: Active, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 330 mW, Frequency - Transition: 150 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 10 kOhms.
Weitere Produktangebote BCR555E6327 nach Preis ab 0.078 EUR bis 0.62 EUR
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BCR555E6327 | Hersteller : INFINEON TECHNOLOGIES |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ Mounting: SMD Power dissipation: 0.33W Polarisation: bipolar Type of transistor: PNP Collector current: 0.5A Collector-emitter voltage: 50V Frequency: 150MHz Case: SOT23 Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ |
auf Bestellung 3509 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR555E6327 | Hersteller : Infineon | PNP SOT23 Silicon Digital Transistor Built in bias resistor (R1= 2.2 kOhm R2= 10 kOhm), Vce=50V, Ic=500mA, hfemin=70, Ptot=330 mW |
auf Bestellung 8055 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR 555 E6327 | Hersteller : Infineon Technologies | Digital Transistors PNP Silicon Digital TRANSISTOR |
auf Bestellung 132 Stücke: Lieferzeit 10-14 Tag (e) |
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BCR555E6327 Produktcode: 125158 |
Transistoren > Bipolar-Transistoren PNP |
Produkt ist nicht verfügbar
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BCR 555 E6327 | Hersteller : Infineon Technologies |
Description: BIPOLAR DIGITAL TRANSISTOR Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Supplier Device Package: PG-SOT23-3-3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 330 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms |
Produkt ist nicht verfügbar |