BSP149H6906XTSA1 Infineon Technologies
Hersteller: Infineon TechnologiesTrans MOSFET N-CH 200V 0.66A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 0.75 EUR |
| 2000+ | 0.72 EUR |
| 10000+ | 0.68 EUR |
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Technische Details BSP149H6906XTSA1 Infineon Technologies
Description: MOSFET N-CH 200V 660MA SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 660mA (Ta), Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V, FET Feature: Depletion Mode, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 1V @ 400µA, Supplier Device Package: PG-SOT223-4, Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 0V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V.
Weitere Produktangebote BSP149H6906XTSA1 nach Preis ab 0.59 EUR bis 2.02 EUR
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BSP149H6906XTSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 200V 0.66A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101 |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP149H6906XTSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 200V 0.66A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101 |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP149H6906XTSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 200V 0.66A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101 |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP149H6906XTSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 200V 0.66A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101 |
auf Bestellung 5644 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP149H6906XTSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 200V 0.66A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101 |
auf Bestellung 5644 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP149H6906XTSA1 | Hersteller : Infineon Technologies |
MOSFETs N-Ch 200V 140mA SOT-223-3 |
auf Bestellung 54 Stücke: Lieferzeit 10-14 Tag (e) |
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BSP149H6906XTSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 200V 660MA SOT223-4 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 660mA (Ta) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V FET Feature: Depletion Mode Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 1V @ 400µA Supplier Device Package: PG-SOT223-4 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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BSP149H6906XTSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 200V 0.66A Automotive 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP149H6906XTSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 200V; 0.53A; Idm: 2.6A Type of transistor: N-MOSFET Technology: SIPMOS® Polarisation: unipolar Drain-source voltage: 200V Drain current: 0.53A Pulsed drain current: 2.6A Power dissipation: 1.8W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of channel: depleted Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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BSP149H6906XTSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 200V 660MA SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 660mA (Ta) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V FET Feature: Depletion Mode Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 1V @ 400µA Supplier Device Package: PG-SOT223-4 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V |
Produkt ist nicht verfügbar |
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BSP149H6906XTSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 200V; 0.53A; Idm: 2.6A Type of transistor: N-MOSFET Technology: SIPMOS® Polarisation: unipolar Drain-source voltage: 200V Drain current: 0.53A Pulsed drain current: 2.6A Power dissipation: 1.8W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of channel: depleted |
Produkt ist nicht verfügbar |