IPA032N06N3GXKSA1 Infineon Technologies
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details IPA032N06N3GXKSA1 Infineon Technologies
Description: MOSFET N-CH 60V 84A TO220-3-31, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 84A (Tc), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 80A, 10V, Power Dissipation (Max): 41W (Tc), Vgs(th) (Max) @ Id: 4V @ 118µA, Supplier Device Package: PG-TO220-3-31, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V.
Weitere Produktangebote IPA032N06N3GXKSA1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
IPA032N06N3GXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 41W; TO220FP Mounting: THT Type of transistor: N-MOSFET Case: TO220FP Power dissipation: 41W Polarisation: unipolar Kind of package: tube Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 84A On-state resistance: 3.2mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
IPA032N06N3GXKSA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 60V 84A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
||
IPA032N06N3GXKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 84A TO220-3-31 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 80A, 10V Power Dissipation (Max): 41W (Tc) Vgs(th) (Max) @ Id: 4V @ 118µA Supplier Device Package: PG-TO220-3-31 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V |
Produkt ist nicht verfügbar |
||
IPA032N06N3GXKSA1 | Hersteller : Infineon Technologies | MOSFET TRENCH 40<-<100V |
Produkt ist nicht verfügbar |
||
IPA032N06N3GXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 41W; TO220FP Mounting: THT Type of transistor: N-MOSFET Case: TO220FP Power dissipation: 41W Polarisation: unipolar Kind of package: tube Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 84A On-state resistance: 3.2mΩ |
Produkt ist nicht verfügbar |