IRLR3410TRRPBF Infineon Technologies
auf Bestellung 875 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 288+ | 0.51 EUR |
| 289+ | 0.49 EUR |
| 291+ | 0.47 EUR |
| 292+ | 0.44 EUR |
| 500+ | 0.42 EUR |
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Technische Details IRLR3410TRRPBF Infineon Technologies
Description: MOSFET N-CH 100V 17A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V, Power Dissipation (Max): 79W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-252AA (DPAK), Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V.
Weitere Produktangebote IRLR3410TRRPBF nach Preis ab 0.4 EUR bis 0.78 EUR
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IRLR3410TRRPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH Si 100V 17A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 875 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLR3410TRRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 100V 17A 3-Pin(2+Tab) DPAK T/R |
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IRLR3410TRRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Power dissipation: 52W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level Anzahl je Verpackung: 3000 Stücke |
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IRLR3410TRRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 17A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V |
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IRLR3410TRRPBF | Hersteller : Infineon Technologies |
MOSFET 100V 1 N-CH HEXFET 105mOhms 22.7nC |
Produkt ist nicht verfügbar |
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IRLR3410TRRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Power dissipation: 52W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |