IRS2118PBF ROCHESTER ELECTRONICS
Hersteller: ROCHESTER ELECTRONICSDescription: ROCHESTER ELECTRONICS - IRS2118PBF - IRS2118 - GATE DRIVER
tariffCode: 85423190
productTraceability: No
rohsCompliant: YES
euEccn: TBC
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 1550 Stücke:
Lieferzeit 14-21 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details IRS2118PBF ROCHESTER ELECTRONICS
Description: IC GATE DRVR HIGH-SIDE 8DIP, Packaging: Tube, Package / Case: 8-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Voltage - Supply: 10V ~ 20V, Input Type: Inverting, High Side Voltage - Max (Bootstrap): 600 V, Supplier Device Package: 8-PDIP, Rise / Fall Time (Typ): 75ns, 35ns, Channel Type: Single, Driven Configuration: High-Side, Number of Drivers: 1, Gate Type: IGBT, N-Channel MOSFET, Logic Voltage - VIL, VIH: 6V, 9.5V, Current - Peak Output (Source, Sink): 290mA, 600mA, Part Status: Last Time Buy, DigiKey Programmable: Not Verified.
Weitere Produktangebote IRS2118PBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IRS2118PBF | Hersteller : Infineon Technologies |
Driver 600V 0.6A 1-OUT High Side/Low Side Inv 8-Pin PDIP Tube |
Produkt ist nicht verfügbar |
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IRS2118PBF | Hersteller : Infineon Technologies |
Driver 600V 1-OUT High Side/Low Side Inv 8-Pin PDIP Tube |
Produkt ist nicht verfügbar |
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IRS2118PBF | Hersteller : INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: gate driver; high-side Case: DIP8 Output current: -600...290mA Power: 1W Number of channels: 1 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 0.2µs Turn-off time: 140ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IRS2118PBF | Hersteller : Infineon Technologies |
Description: IC GATE DRVR HIGH-SIDE 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-PDIP Rise / Fall Time (Typ): 75ns, 35ns Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 6V, 9.5V Current - Peak Output (Source, Sink): 290mA, 600mA Part Status: Last Time Buy DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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IRS2118PBF | Hersteller : Infineon Technologies |
Gate Drivers Sngl Hi Sd Drvr Invrt Inpt |
Produkt ist nicht verfügbar |
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IRS2118PBF | Hersteller : INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: gate driver; high-side Case: DIP8 Output current: -600...290mA Power: 1W Number of channels: 1 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 0.2µs Turn-off time: 140ns |
Produkt ist nicht verfügbar |