IPA060N06NM5SXKSA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; Idm: 224A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Pulsed drain current: 224A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; Idm: 224A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Pulsed drain current: 224A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 498 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
38+ | 1.89 EUR |
42+ | 1.72 EUR |
48+ | 1.5 EUR |
56+ | 1.29 EUR |
59+ | 1.22 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPA060N06NM5SXKSA1 INFINEON TECHNOLOGIES
Description: MOSFET N-CH 60V 56A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 56A, 10V, Power Dissipation (Max): 33W (Tc), Vgs(th) (Max) @ Id: 3.3V @ 36µA, Supplier Device Package: PG-TO220 Full Pack, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 30 V.
Weitere Produktangebote IPA060N06NM5SXKSA1 nach Preis ab 1.22 EUR bis 1.89 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IPA060N06NM5SXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 40A; Idm: 224A; 33W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 40A Pulsed drain current: 224A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
auf Bestellung 498 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA060N06NM5SXKSA1 | Hersteller : Infineon Technologies | Power Transistor MOSFET |
Produkt ist nicht verfügbar |
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IPA060N06NM5SXKSA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 60V 56A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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IPA060N06NM5SXKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 56A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 56A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 36µA Supplier Device Package: PG-TO220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 30 V |
Produkt ist nicht verfügbar |
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IPA060N06NM5SXKSA1 | Hersteller : Infineon Technologies | MOSFETs TRENCH 40<-<100V |
Produkt ist nicht verfügbar |