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IPD80R750P7ATMA1

IPD80R750P7ATMA1 Infineon Technologies

Infineon-IPD80R750P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cea08926648f0 Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 7A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.92 EUR
Mindestbestellmenge: 2500
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Technische Details IPD80R750P7ATMA1 Infineon Technologies

Description: MOSFET N-CH 800V 7A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V, Power Dissipation (Max): 51W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 140µA, Supplier Device Package: PG-TO252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V.

Weitere Produktangebote IPD80R750P7ATMA1 nach Preis ab 0.85 EUR bis 3.22 EUR

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IPD80R750P7ATMA1 IPD80R750P7ATMA1 Hersteller : Infineon Technologies infineon-ipd80r750p7-datasheet-v02_03-en.pdf Trans MOSFET N-CH 800V 7A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 27500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2500+1.1 EUR
Mindestbestellmenge: 2500
IPD80R750P7ATMA1 IPD80R750P7ATMA1 Hersteller : Infineon Technologies infineon-ipd80r750p7-datasheet-v02_03-en.pdf Trans MOSFET N-CH 800V 7A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
89+1.72 EUR
96+ 1.54 EUR
114+ 1.25 EUR
200+ 1.14 EUR
500+ 1.09 EUR
1000+ 0.94 EUR
2000+ 0.85 EUR
Mindestbestellmenge: 89
IPD80R750P7ATMA1 IPD80R750P7ATMA1 Hersteller : Infineon Technologies Infineon_IPD80R750P7_DataSheet_v02_03_EN-3362359.pdf MOSFETs LOW POWER_NEW
auf Bestellung 2826 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.43 EUR
10+ 1.99 EUR
100+ 1.43 EUR
500+ 1.15 EUR
1000+ 1.04 EUR
2500+ 0.95 EUR
Mindestbestellmenge: 2
IPD80R750P7ATMA1 IPD80R750P7ATMA1 Hersteller : Infineon Technologies Infineon-IPD80R750P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cea08926648f0 Description: MOSFET N-CH 800V 7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
auf Bestellung 4144 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.22 EUR
10+ 2.06 EUR
100+ 1.39 EUR
500+ 1.11 EUR
1000+ 1.02 EUR
Mindestbestellmenge: 6
IPD80R750P7ATMA1 IPD80R750P7ATMA1 Hersteller : Infineon Technologies infineon-ipd80r750p7-datasheet-v02_03-en.pdf P7 Power Transistor
Produkt ist nicht verfügbar
IPD80R750P7ATMA1 IPD80R750P7ATMA1 Hersteller : Infineon Technologies infineon-ipd80r750p7-datasheet-v02_03-en.pdf Trans MOSFET N-CH 800V 7A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
IPD80R750P7ATMA1 IPD80R750P7ATMA1 Hersteller : INFINEON TECHNOLOGIES IPD80R750P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; PG-TO252-3; ESD
Mounting: SMD
Version: ESD
Drain-source voltage: 800V
Drain current: 4.6A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 51W
Polarisation: unipolar
Gate charge: 17nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO252-3
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
IPD80R750P7ATMA1 IPD80R750P7ATMA1 Hersteller : INFINEON TECHNOLOGIES IPD80R750P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; PG-TO252-3; ESD
Mounting: SMD
Version: ESD
Drain-source voltage: 800V
Drain current: 4.6A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 51W
Polarisation: unipolar
Gate charge: 17nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO252-3
Produkt ist nicht verfügbar