FF200R17KE4HOSA1 Infineon Technologies
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 226.37 EUR |
| 10+ | 220.16 EUR |
| 20+ | 197.93 EUR |
| 50+ | 193 EUR |
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Technische Details FF200R17KE4HOSA1 Infineon Technologies
Description: IGBT MOD 1700V 310A 1250W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: 2 Independent, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A, NTC Thermistor: No, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 310 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 1250 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 18 nF @ 25 V.
Weitere Produktangebote FF200R17KE4HOSA1 nach Preis ab 222.97 EUR bis 244.61 EUR
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FF200R17KE4HOSA1 | Hersteller : INFINEON TECHNOLOGIES |
 Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Power dissipation: 1.25kW Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge Case: AG-62MM-1 Max. off-state voltage: 1.7kV Semiconductor structure: transistor/transistor Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4 Stücke: Lieferzeit 7-14 Tag (e) |
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FF200R17KE4HOSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Power dissipation: 1.25kW Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge Case: AG-62MM-1 Max. off-state voltage: 1.7kV Semiconductor structure: transistor/transistor |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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FF200R17KE4HOSA1 | Hersteller : Infineon Technologies |
Trans IGBT Module N-CH 1700V 310A 1250W 7-Pin 62MM-1 Tray |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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FF200R17KE4HOSA1 | Hersteller : Infineon Technologies |
Trans IGBT Module N-CH 1700V 310A 1250000mW 7-Pin 62MM-1 Tray |
Produkt ist nicht verfügbar |
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FF200R17KE4HOSA1 | Hersteller : Infineon Technologies |
Description: IGBT MOD 1700V 310A 1250W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 310 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 1250 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 18 nF @ 25 V |
Produkt ist nicht verfügbar |