IRF6714MTRPBF Infineon Technologies
auf Bestellung 4180 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 122+ | 1.25 EUR |
| 124+ | 1.19 EUR |
| 129+ | 1.1 EUR |
| 500+ | 1.02 EUR |
| 1000+ | 0.96 EUR |
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Technische Details IRF6714MTRPBF Infineon Technologies
Description: MOSFET N-CH 25V 29A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric MX, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 166A (Tc), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 29A, 10V, Power Dissipation (Max): 2.8W (Ta), 89W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 100µA, Supplier Device Package: DIRECTFET™ MX, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3890 pF @ 13 V.
Weitere Produktangebote IRF6714MTRPBF nach Preis ab 0.96 EUR bis 4.33 EUR
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IRF6714MTRPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH Si 25V 29A 7-Pin Direct-FET MX T/R |
auf Bestellung 4180 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF6714MTRPBF | Hersteller : Infineon / IR |
MOSFET 25V 1 N-CH HEXFET 2.1mOhms 29nC |
auf Bestellung 4753 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF6714MTRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 25V 29A 7-Pin Direct-FET MX T/R |
Produkt ist nicht verfügbar |
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IRF6714MTRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 166A; 89W; DirectFET Mounting: SMD Kind of package: reel Drain-source voltage: 25V Drain current: 166A Type of transistor: N-MOSFET Power dissipation: 89W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Case: DirectFET Anzahl je Verpackung: 4800 Stücke |
Produkt ist nicht verfügbar |
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IRF6714MTRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 25V 29A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MX Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 166A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 29A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 100µA Supplier Device Package: DIRECTFET™ MX Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3890 pF @ 13 V |
Produkt ist nicht verfügbar |
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IRF6714MTRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 166A; 89W; DirectFET Mounting: SMD Kind of package: reel Drain-source voltage: 25V Drain current: 166A Type of transistor: N-MOSFET Power dissipation: 89W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Case: DirectFET |
Produkt ist nicht verfügbar |