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IR2183SPBF IR2183SPBF INFINEON TECHNOLOGIES IR2183SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
BSP752T  BSP752T  INFINEON TECHNOLOGIES BSP752T.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Technology: Classic PROFET
Output voltage: 52V
Produkt ist nicht verfügbar
BAS2103WE6327HTSA1 BAS2103WE6327HTSA1 INFINEON TECHNOLOGIES BAS2103WE6327HTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; SOD323; 250mW; reel,tape
Mounting: SMD
Kind of package: reel; tape
Load current: 0.25A
Semiconductor structure: single diode
Power dissipation: 0.25W
Type of diode: switching
Features of semiconductor devices: ultrafast switching
Case: SOD323
Max. off-state voltage: 250V
auf Bestellung 10860 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.27 EUR
350+ 0.2 EUR
435+ 0.16 EUR
637+ 0.11 EUR
1076+ 0.066 EUR
1139+ 0.063 EUR
Mindestbestellmenge: 264
IRS2103PBF IRS2103PBF INFINEON TECHNOLOGIES irs2103.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Turn-on time: 750ns
Turn-off time: 185ns
Output current: -600...290mA
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Case: DIP8
Power: 1W
Supply voltage: 10...20V DC
Produkt ist nicht verfügbar
IRS2103SPBF IRS2103SPBF INFINEON TECHNOLOGIES irs2103.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Turn-on time: 750ns
Turn-off time: 185ns
Output current: -600...290mA
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Case: SO8
Power: 625mW
Supply voltage: 10...20V DC
Produkt ist nicht verfügbar
IPN70R900P7SATMA1 IPN70R900P7SATMA1 INFINEON TECHNOLOGIES IPN70R900P7S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 6.5W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.5A
Power dissipation: 6.5W
Case: PG-SOT223
Gate-source voltage: ±16V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 6.8nC
Kind of channel: enhanced
Version: ESD
Produkt ist nicht verfügbar
BA592E6327HTSA1 BA592E6327HTSA1 INFINEON TECHNOLOGIES BAx92-DTE.pdf Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.6...1.4pF
auf Bestellung 2470 Stücke:
Lieferzeit 14-21 Tag (e)
335+0.21 EUR
375+ 0.19 EUR
425+ 0.17 EUR
490+ 0.15 EUR
515+ 0.14 EUR
Mindestbestellmenge: 335
IRF630NPBF IRF630NPBF INFINEON TECHNOLOGIES irf630n.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 82W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 23.3nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 396 Stücke:
Lieferzeit 14-21 Tag (e)
65+1.1 EUR
121+ 0.59 EUR
165+ 0.43 EUR
174+ 0.41 EUR
Mindestbestellmenge: 65
IRF630NSTRLPBF IRF630NSTRLPBF INFINEON TECHNOLOGIES irf630npbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 82W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
auf Bestellung 359 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.19 EUR
84+ 0.86 EUR
95+ 0.76 EUR
108+ 0.66 EUR
115+ 0.63 EUR
Mindestbestellmenge: 61
SPA17N80C3 SPA17N80C3 INFINEON TECHNOLOGIES SPA17N80C3-DTE.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 42W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 42W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
SPB17N80C3 SPB17N80C3 INFINEON TECHNOLOGIES SPB17N80C3-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 227W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 227W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 465 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.72 EUR
14+ 5.16 EUR
15+ 4.89 EUR
250+ 4.69 EUR
Mindestbestellmenge: 11
SPP17N80C3 SPP17N80C3 INFINEON TECHNOLOGIES description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
18+3.98 EUR
Mindestbestellmenge: 18
SPW17N80C3 SPW17N80C3 INFINEON TECHNOLOGIES SPW17N80C3.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 219 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.28 EUR
12+ 6.02 EUR
13+ 5.69 EUR
Mindestbestellmenge: 9
IRFR9120NTRLPBF IRFR9120NTRLPBF INFINEON TECHNOLOGIES irfr9120npbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.5A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFR9120NTRPBF IRFR9120NTRPBF INFINEON TECHNOLOGIES irfr9120npbf.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.5A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
auf Bestellung 1314 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.17 EUR
80+ 0.9 EUR
130+ 0.55 EUR
137+ 0.52 EUR
Mindestbestellmenge: 61
IRF9540NLPBF IRF9540NLPBF INFINEON TECHNOLOGIES irf9540nspbf.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 140W; TO262
Mounting: THT
Technology: HEXFET®
Kind of channel: enhanced
Case: TO262
Drain-source voltage: -100V
Drain current: -23A
Type of transistor: P-MOSFET
Power dissipation: 140W
Polarisation: unipolar
auf Bestellung 282 Stücke:
Lieferzeit 14-21 Tag (e)
24+3 EUR
43+ 1.7 EUR
45+ 1.6 EUR
Mindestbestellmenge: 24
IRF9540NPBF IRF9540NPBF INFINEON TECHNOLOGIES irf9540n.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 140W; TO220AB
Kind of package: tube
Mounting: THT
Gate charge: 64.7nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220AB
Drain-source voltage: -100V
Drain current: -23A
On-state resistance: 0.117Ω
Type of transistor: P-MOSFET
Power dissipation: 140W
Polarisation: unipolar
auf Bestellung 825 Stücke:
Lieferzeit 14-21 Tag (e)
47+1.54 EUR
58+ 1.24 EUR
88+ 0.82 EUR
93+ 0.77 EUR
Mindestbestellmenge: 47
IRF9540NSTRLPBF IRF9540NSTRLPBF INFINEON TECHNOLOGIES irf9540nspbf.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRLR7843TRPBF IRLR7843TRPBF INFINEON TECHNOLOGIES IRLR7843TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 161A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 161A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
auf Bestellung 591 Stücke:
Lieferzeit 14-21 Tag (e)
56+1.29 EUR
62+ 1.16 EUR
81+ 0.89 EUR
85+ 0.84 EUR
Mindestbestellmenge: 56
IRFP1405PBF IRFP1405PBF INFINEON TECHNOLOGIES irfp1405pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 310W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 310W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.48 EUR
18+ 4 EUR
24+ 3.07 EUR
25+ 2.9 EUR
Mindestbestellmenge: 16
IRFP140NPBF IRFP140NPBF INFINEON TECHNOLOGIES irfp140n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 27A; 94W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 27A
Power dissipation: 94W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 62.7nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 533 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.42 EUR
41+ 1.76 EUR
64+ 1.13 EUR
67+ 1.07 EUR
Mindestbestellmenge: 30
KIT_XMC11_BOOT_001 KIT_XMC11_BOOT_001 INFINEON TECHNOLOGIES KIT-XMC11-BOOT-001-DTE.pdf Category: Development kits - others
Description: Dev.kit: ARM Infineon; Comp: XMC1100; Architecture: Cortex M0
Type of development kit: ARM Infineon
Components: XMC1100
Programmers and development kits features: 3,3V voltage regulator; 5V voltage regulator; connector with SPI signal lines; LED diode x6; SEGGER J-Link OB Debugger; UART
Kind of connector: pin strips; USB B micro
Kind of architecture: Cortex M0
Produkt ist nicht verfügbar
SPD06N80C3ATMA1 INFINEON TECHNOLOGIES Infineon-SPD06N80C3-DS-v02_92-en.pdf?fileId=db3a30433f1b26e8013f1dffc5130173 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.8A; Idm: 18A; 83W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.8A
Pulsed drain current: 18A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
BSC150N03LDGATMA1 BSC150N03LDGATMA1 INFINEON TECHNOLOGIES BSC150N03LDG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 26W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 26W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
BSO150N03MDGXUMA1 BSO150N03MDGXUMA1 INFINEON TECHNOLOGIES BSO150N03MDG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.3A; 1.56W; PG-DSO-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.3A
Power dissipation: 1.56W
Case: PG-DSO-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
BAT62E6327HTSA1 BAT62E6327HTSA1 INFINEON TECHNOLOGIES BAT62E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 20mA; SOT143; 100mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 20mA
Semiconductor structure: double independent
Case: SOT143
Power dissipation: 0.1W
auf Bestellung 1631 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.51 EUR
199+ 0.36 EUR
278+ 0.26 EUR
439+ 0.16 EUR
463+ 0.15 EUR
Mindestbestellmenge: 139
BAT6804E6327HTSA1 BAT6804E6327HTSA1 INFINEON TECHNOLOGIES BAT6804E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 8V; 0.13A; SOT23; 150mW
Semiconductor structure: double series
Power dissipation: 0.15W
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOT23
Max. off-state voltage: 8V
Load current: 0.13A
auf Bestellung 5234 Stücke:
Lieferzeit 14-21 Tag (e)
132+0.54 EUR
177+ 0.4 EUR
206+ 0.35 EUR
289+ 0.25 EUR
306+ 0.23 EUR
Mindestbestellmenge: 132
BAT6804WH6327XTSA1 BAT6804WH6327XTSA1 INFINEON TECHNOLOGIES BAT6804E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 8V; 0.13A; SOT323; 150mW
Semiconductor structure: double series
Power dissipation: 0.15W
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOT323
Max. off-state voltage: 8V
Load current: 0.13A
auf Bestellung 485 Stücke:
Lieferzeit 14-21 Tag (e)
114+0.63 EUR
139+ 0.51 EUR
188+ 0.38 EUR
199+ 0.36 EUR
250+ 0.35 EUR
Mindestbestellmenge: 114
BAT68E6327HTSA1 BAT68E6327HTSA1 INFINEON TECHNOLOGIES BAT6804E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 8V; 0.13A; SOT23; 150mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 8V
Load current: 0.13A
Semiconductor structure: single diode
Case: SOT23
Power dissipation: 0.15W
auf Bestellung 2883 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
216+ 0.33 EUR
285+ 0.25 EUR
321+ 0.22 EUR
491+ 0.15 EUR
519+ 0.14 EUR
Mindestbestellmenge: 162
IR21271PBF IR21271PBF INFINEON TECHNOLOGIES IR21271SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 150ns
Turn-off time: 150ns
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.19 EUR
27+ 2.67 EUR
29+ 2.53 EUR
Mindestbestellmenge: 23
IR21271SPBF IR21271SPBF INFINEON TECHNOLOGIES IR21271SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 150ns
Turn-off time: 150ns
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.92 EUR
36+ 2 EUR
38+ 1.89 EUR
Mindestbestellmenge: 25
IR2127PBF IR2127PBF INFINEON TECHNOLOGIES IR21271SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 12...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
auf Bestellung 105 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.76 EUR
22+ 3.39 EUR
28+ 2.62 EUR
29+ 2.47 EUR
Mindestbestellmenge: 20
IR2127SPBF IR2127SPBF INFINEON TECHNOLOGIES ir2127spbf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.16 EUR
40+ 1.79 EUR
43+ 1.69 EUR
Mindestbestellmenge: 23
IGT60R190D1SATMA1 IGT60R190D1SATMA1 INFINEON TECHNOLOGIES IGT60R190D1SATMA1.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 12.5A; Idm: 23A
Type of transistor: N-JFET
Technology: CoolGaN™
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 600V
Drain current: 12.5A
Pulsed drain current: 23A
Power dissipation: 55.5W
Case: PG-HSOF-8-3
Gate-source voltage: -10V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 3.2nC
Kind of package: tape
Kind of channel: enhanced
Gate current: 7.7mA
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.2 EUR
7+ 11.54 EUR
Mindestbestellmenge: 6
IRLZ24NSTRLPBF IRLZ24NSTRLPBF INFINEON TECHNOLOGIES irlz24nspbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 18A; 45W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 18A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±16V
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
IRFP3077PBF IRFP3077PBF INFINEON TECHNOLOGIES irfp3077pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 200A; 340W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 200A
Power dissipation: 340W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
IR2117PBF IR2117PBF INFINEON TECHNOLOGIES ir2117.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Operating temperature: -40...125°C
Mounting: THT
Kind of package: tube
Turn-off time: 105ns
Output current: -420...200mA
Type of integrated circuit: driver
Number of channels: 1
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Voltage class: 600V
Case: DIP8
Power: 1W
Supply voltage: 10...20V DC
Turn-on time: 125ns
auf Bestellung 301 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.39 EUR
31+ 2.37 EUR
32+ 2.25 EUR
Mindestbestellmenge: 22
IR2117SPBF IR2117SPBF INFINEON TECHNOLOGIES ir2117.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
auf Bestellung 166 Stücke:
Lieferzeit 14-21 Tag (e)
36+2 EUR
40+ 1.79 EUR
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55+ 1.32 EUR
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IR2111PBF IR2111PBF INFINEON TECHNOLOGIES ir2111.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 830ns
Turn-off time: 190ns
auf Bestellung 112 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.03 EUR
31+ 2.37 EUR
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Mindestbestellmenge: 24
IR2111SPBF IR2111SPBF INFINEON TECHNOLOGIES IR2111SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 830ns
Turn-off time: 190ns
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.03 EUR
27+ 2.72 EUR
35+ 2.1 EUR
36+ 1.99 EUR
Mindestbestellmenge: 24
BC847PNH6327XTSA1 BC847PNH6327XTSA1 INFINEON TECHNOLOGIES BC846PNH6327.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
auf Bestellung 2140 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.25 EUR
520+ 0.14 EUR
680+ 0.11 EUR
715+ 0.1 EUR
Mindestbestellmenge: 295
BSP125H6327XTSA1 BSP125H6327XTSA1 INFINEON TECHNOLOGIES BSP125H6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Mounting: SMD
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT223
Drain-source voltage: 600V
Drain current: 0.12A
On-state resistance: 45Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
auf Bestellung 1133 Stücke:
Lieferzeit 14-21 Tag (e)
74+0.97 EUR
88+ 0.81 EUR
152+ 0.47 EUR
161+ 0.44 EUR
1000+ 0.43 EUR
Mindestbestellmenge: 74
BSS87H6327FTSA1 BSS87H6327FTSA1 INFINEON TECHNOLOGIES BSS87H6327FTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.26A; 1W; SOT89-4
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.26A
Power dissipation: 1W
Case: SOT89-4
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 1015 Stücke:
Lieferzeit 14-21 Tag (e)
112+0.64 EUR
139+ 0.51 EUR
162+ 0.44 EUR
184+ 0.39 EUR
268+ 0.27 EUR
283+ 0.25 EUR
1000+ 0.24 EUR
Mindestbestellmenge: 112
BSS225H6327FTSA1 BSS225H6327FTSA1 INFINEON TECHNOLOGIES BSS225H6327FTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89
Mounting: SMD
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT89
Drain-source voltage: 600V
Drain current: 0.09A
On-state resistance: 45Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
auf Bestellung 544 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.67 EUR
118+ 0.61 EUR
207+ 0.35 EUR
220+ 0.33 EUR
500+ 0.32 EUR
Mindestbestellmenge: 107
BSS315PH6327XTSA1 BSS315PH6327XTSA1 INFINEON TECHNOLOGIES BSS315PH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23
Mounting: SMD
Case: PG-SOT23
Technology: OptiMOS™ P2
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Drain current: -1.5A
Power dissipation: 0.5W
Polarisation: unipolar
Drain-source voltage: -30V
auf Bestellung 4868 Stücke:
Lieferzeit 14-21 Tag (e)
143+0.5 EUR
196+ 0.37 EUR
323+ 0.22 EUR
371+ 0.19 EUR
676+ 0.11 EUR
715+ 0.1 EUR
Mindestbestellmenge: 143
BSD235NH6327XTSA1 BSD235NH6327XTSA1 INFINEON TECHNOLOGIES BSD235NH6327XTSA1.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.95A; 0.5W; SOT363
Type of transistor: N-MOSFET x2
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.95A
Power dissipation: 0.5W
Case: SOT363
Gate-source voltage: ±12V
On-state resistance: 0.35Ω
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 2170 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
230+ 0.31 EUR
336+ 0.21 EUR
371+ 0.19 EUR
603+ 0.12 EUR
633+ 0.11 EUR
Mindestbestellmenge: 173
BSD840NH6327XTSA1 BSD840NH6327XTSA1 INFINEON TECHNOLOGIES BSD840NH6327XTSA1.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.88A; 0.5W; SOT363
Type of transistor: N-MOSFET x2
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.88A
Power dissipation: 0.5W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 5300 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
224+ 0.32 EUR
353+ 0.2 EUR
404+ 0.18 EUR
736+ 0.097 EUR
770+ 0.093 EUR
Mindestbestellmenge: 173
BSS214NH6327XTSA1 BSS214NH6327XTSA1 INFINEON TECHNOLOGIES BSS214NH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 2195 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
264+ 0.27 EUR
429+ 0.17 EUR
484+ 0.15 EUR
832+ 0.086 EUR
881+ 0.081 EUR
Mindestbestellmenge: 173
BSL307SPH6327XTSA1 BSL307SPH6327XTSA1 INFINEON TECHNOLOGIES BSL307SPH6327XTSA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.5A; 2W; PG-TSOP-6
Mounting: SMD
Case: PG-TSOP-6
Technology: OptiMOS™ P
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -30V
Drain current: -5.5A
On-state resistance: 43mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Produkt ist nicht verfügbar
BSS214NWH6327XTSA1 BSS214NWH6327XTSA1 INFINEON TECHNOLOGIES BSS214NWH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT323
Drain-source voltage: 20V
Drain current: 1.5A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±12V
Mounting: SMD
Case: SOT323
auf Bestellung 3830 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
309+ 0.23 EUR
432+ 0.17 EUR
497+ 0.14 EUR
851+ 0.084 EUR
900+ 0.08 EUR
Mindestbestellmenge: 167
BSP324H6327XTSA1 BSP324H6327XTSA1 INFINEON TECHNOLOGIES BSP324H6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 0.17A; 1.8W; SOT223
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Power dissipation: 1.8W
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 400V
Drain current: 0.17A
On-state resistance: 25Ω
Type of transistor: N-MOSFET
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
80+0.9 EUR
96+ 0.75 EUR
155+ 0.46 EUR
164+ 0.44 EUR
Mindestbestellmenge: 80
IRL2505PBF IRL2505PBF INFINEON TECHNOLOGIES irl2505pbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 104A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 104A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
auf Bestellung 142 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.53 EUR
35+ 2.04 EUR
47+ 1.53 EUR
50+ 1.46 EUR
Mindestbestellmenge: 29
IRL2505STRLPBF INFINEON TECHNOLOGIES irl2505spbf.pdf?fileId=5546d462533600a40153565b75022502 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 74A; Idm: 360A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 74A
Pulsed drain current: 360A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRF7201TRPBF IRF7201TRPBF INFINEON TECHNOLOGIES IRF7201TRPBF.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRF7205TRPBF IRF7205TRPBF INFINEON TECHNOLOGIES irf7205pbf.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
auf Bestellung 2843 Stücke:
Lieferzeit 14-21 Tag (e)
82+0.87 EUR
208+ 0.34 EUR
221+ 0.32 EUR
Mindestbestellmenge: 82
IPD50N10S3L16ATMA1 INFINEON TECHNOLOGIES Infineon-IPD50N10S3L_16-DS-v01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a908698d3594e&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 38A; Idm: 200A
Polarisation: unipolar
Technology: OptiMOS® -T
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 200A
Mounting: SMD
Case: PG-TO252-3-11
Drain-source voltage: 100V
Drain current: 38A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 100W
Produkt ist nicht verfügbar
BSZ150N10LS3GATMA1 BSZ150N10LS3GATMA1 INFINEON TECHNOLOGIES BSZ150N10LS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPA050N10NM5SXKSA1 IPA050N10NM5SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA050N10NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cfdf4f16e2d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 264A; 38W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 47A
Pulsed drain current: 264A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IAUT150N10S5N035ATMA1 IAUT150N10S5N035ATMA1 INFINEON TECHNOLOGIES IAUT150N10S5N035.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 166W; PG-HSOF-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Power dissipation: 166W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
IGW40N120H3FKSA1 IGW40N120H3FKSA1 INFINEON TECHNOLOGIES IGW40N120H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 483W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 483W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H3
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.22 EUR
11+ 6.66 EUR
Mindestbestellmenge: 8
IR2183SPBF IR2183SPBF.pdf
IR2183SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1+71.5 EUR
BSP752T  BSP752T.pdf
BSP752T 
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Technology: Classic PROFET
Output voltage: 52V
Produkt ist nicht verfügbar
BAS2103WE6327HTSA1 BAS2103WE6327HTSA1.pdf
BAS2103WE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; SOD323; 250mW; reel,tape
Mounting: SMD
Kind of package: reel; tape
Load current: 0.25A
Semiconductor structure: single diode
Power dissipation: 0.25W
Type of diode: switching
Features of semiconductor devices: ultrafast switching
Case: SOD323
Max. off-state voltage: 250V
auf Bestellung 10860 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
264+0.27 EUR
350+ 0.2 EUR
435+ 0.16 EUR
637+ 0.11 EUR
1076+ 0.066 EUR
1139+ 0.063 EUR
Mindestbestellmenge: 264
IRS2103PBF irs2103.pdf
IRS2103PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Turn-on time: 750ns
Turn-off time: 185ns
Output current: -600...290mA
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Case: DIP8
Power: 1W
Supply voltage: 10...20V DC
Produkt ist nicht verfügbar
IRS2103SPBF irs2103.pdf
IRS2103SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Turn-on time: 750ns
Turn-off time: 185ns
Output current: -600...290mA
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Case: SO8
Power: 625mW
Supply voltage: 10...20V DC
Produkt ist nicht verfügbar
IPN70R900P7SATMA1 IPN70R900P7S.pdf
IPN70R900P7SATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 6.5W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.5A
Power dissipation: 6.5W
Case: PG-SOT223
Gate-source voltage: ±16V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 6.8nC
Kind of channel: enhanced
Version: ESD
Produkt ist nicht verfügbar
BA592E6327HTSA1 BAx92-DTE.pdf
BA592E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.6...1.4pF
auf Bestellung 2470 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
335+0.21 EUR
375+ 0.19 EUR
425+ 0.17 EUR
490+ 0.15 EUR
515+ 0.14 EUR
Mindestbestellmenge: 335
IRF630NPBF description irf630n.pdf
IRF630NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 82W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 23.3nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 396 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
65+1.1 EUR
121+ 0.59 EUR
165+ 0.43 EUR
174+ 0.41 EUR
Mindestbestellmenge: 65
IRF630NSTRLPBF irf630npbf.pdf
IRF630NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 82W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
auf Bestellung 359 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
61+1.19 EUR
84+ 0.86 EUR
95+ 0.76 EUR
108+ 0.66 EUR
115+ 0.63 EUR
Mindestbestellmenge: 61
SPA17N80C3 description SPA17N80C3-DTE.pdf
SPA17N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 42W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 42W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
SPB17N80C3 SPB17N80C3-DTE.pdf
SPB17N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 227W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 227W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 465 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
11+6.72 EUR
14+ 5.16 EUR
15+ 4.89 EUR
250+ 4.69 EUR
Mindestbestellmenge: 11
SPP17N80C3 description
SPP17N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
18+3.98 EUR
Mindestbestellmenge: 18
SPW17N80C3 description SPW17N80C3.pdf
SPW17N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 219 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
9+8.28 EUR
12+ 6.02 EUR
13+ 5.69 EUR
Mindestbestellmenge: 9
IRFR9120NTRLPBF irfr9120npbf.pdf
IRFR9120NTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.5A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFR9120NTRPBF description irfr9120npbf.pdf
IRFR9120NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.5A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
auf Bestellung 1314 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
61+1.17 EUR
80+ 0.9 EUR
130+ 0.55 EUR
137+ 0.52 EUR
Mindestbestellmenge: 61
IRF9540NLPBF irf9540nspbf.pdf
IRF9540NLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 140W; TO262
Mounting: THT
Technology: HEXFET®
Kind of channel: enhanced
Case: TO262
Drain-source voltage: -100V
Drain current: -23A
Type of transistor: P-MOSFET
Power dissipation: 140W
Polarisation: unipolar
auf Bestellung 282 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
24+3 EUR
43+ 1.7 EUR
45+ 1.6 EUR
Mindestbestellmenge: 24
IRF9540NPBF irf9540n.pdf
IRF9540NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 140W; TO220AB
Kind of package: tube
Mounting: THT
Gate charge: 64.7nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220AB
Drain-source voltage: -100V
Drain current: -23A
On-state resistance: 0.117Ω
Type of transistor: P-MOSFET
Power dissipation: 140W
Polarisation: unipolar
auf Bestellung 825 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
47+1.54 EUR
58+ 1.24 EUR
88+ 0.82 EUR
93+ 0.77 EUR
Mindestbestellmenge: 47
IRF9540NSTRLPBF description irf9540nspbf.pdf
IRF9540NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRLR7843TRPBF IRLR7843TRPBF.pdf
IRLR7843TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 161A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 161A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
auf Bestellung 591 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
56+1.29 EUR
62+ 1.16 EUR
81+ 0.89 EUR
85+ 0.84 EUR
Mindestbestellmenge: 56
IRFP1405PBF irfp1405pbf.pdf
IRFP1405PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 310W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 310W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
16+4.48 EUR
18+ 4 EUR
24+ 3.07 EUR
25+ 2.9 EUR
Mindestbestellmenge: 16
IRFP140NPBF irfp140n.pdf
IRFP140NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 27A; 94W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 27A
Power dissipation: 94W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 62.7nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 533 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
30+2.42 EUR
41+ 1.76 EUR
64+ 1.13 EUR
67+ 1.07 EUR
Mindestbestellmenge: 30
KIT_XMC11_BOOT_001 KIT-XMC11-BOOT-001-DTE.pdf
KIT_XMC11_BOOT_001
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; Comp: XMC1100; Architecture: Cortex M0
Type of development kit: ARM Infineon
Components: XMC1100
Programmers and development kits features: 3,3V voltage regulator; 5V voltage regulator; connector with SPI signal lines; LED diode x6; SEGGER J-Link OB Debugger; UART
Kind of connector: pin strips; USB B micro
Kind of architecture: Cortex M0
Produkt ist nicht verfügbar
SPD06N80C3ATMA1 Infineon-SPD06N80C3-DS-v02_92-en.pdf?fileId=db3a30433f1b26e8013f1dffc5130173
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.8A; Idm: 18A; 83W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.8A
Pulsed drain current: 18A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
BSC150N03LDGATMA1 BSC150N03LDG-DTE.pdf
BSC150N03LDGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 26W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 26W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
BSO150N03MDGXUMA1 BSO150N03MDG-DTE.pdf
BSO150N03MDGXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.3A; 1.56W; PG-DSO-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.3A
Power dissipation: 1.56W
Case: PG-DSO-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
BAT62E6327HTSA1 BAT62E6327HTSA1.pdf
BAT62E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 20mA; SOT143; 100mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 20mA
Semiconductor structure: double independent
Case: SOT143
Power dissipation: 0.1W
auf Bestellung 1631 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
139+0.51 EUR
199+ 0.36 EUR
278+ 0.26 EUR
439+ 0.16 EUR
463+ 0.15 EUR
Mindestbestellmenge: 139
BAT6804E6327HTSA1 BAT6804E6327HTSA1.pdf
BAT6804E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 8V; 0.13A; SOT23; 150mW
Semiconductor structure: double series
Power dissipation: 0.15W
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOT23
Max. off-state voltage: 8V
Load current: 0.13A
auf Bestellung 5234 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
132+0.54 EUR
177+ 0.4 EUR
206+ 0.35 EUR
289+ 0.25 EUR
306+ 0.23 EUR
Mindestbestellmenge: 132
BAT6804WH6327XTSA1 BAT6804E6327HTSA1.pdf
BAT6804WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 8V; 0.13A; SOT323; 150mW
Semiconductor structure: double series
Power dissipation: 0.15W
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOT323
Max. off-state voltage: 8V
Load current: 0.13A
auf Bestellung 485 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
114+0.63 EUR
139+ 0.51 EUR
188+ 0.38 EUR
199+ 0.36 EUR
250+ 0.35 EUR
Mindestbestellmenge: 114
BAT68E6327HTSA1 BAT6804E6327HTSA1.pdf
BAT68E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 8V; 0.13A; SOT23; 150mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 8V
Load current: 0.13A
Semiconductor structure: single diode
Case: SOT23
Power dissipation: 0.15W
auf Bestellung 2883 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
162+0.44 EUR
216+ 0.33 EUR
285+ 0.25 EUR
321+ 0.22 EUR
491+ 0.15 EUR
519+ 0.14 EUR
Mindestbestellmenge: 162
IR21271PBF description IR21271SPBF.pdf
IR21271PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 150ns
Turn-off time: 150ns
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
23+3.19 EUR
27+ 2.67 EUR
29+ 2.53 EUR
Mindestbestellmenge: 23
IR21271SPBF IR21271SPBF.pdf
IR21271SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 150ns
Turn-off time: 150ns
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
25+2.92 EUR
36+ 2 EUR
38+ 1.89 EUR
Mindestbestellmenge: 25
IR2127PBF description IR21271SPBF.pdf
IR2127PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 12...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
auf Bestellung 105 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
20+3.76 EUR
22+ 3.39 EUR
28+ 2.62 EUR
29+ 2.47 EUR
Mindestbestellmenge: 20
IR2127SPBF ir2127spbf.pdf
IR2127SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
23+3.16 EUR
40+ 1.79 EUR
43+ 1.69 EUR
Mindestbestellmenge: 23
IGT60R190D1SATMA1 IGT60R190D1SATMA1.pdf
IGT60R190D1SATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 12.5A; Idm: 23A
Type of transistor: N-JFET
Technology: CoolGaN™
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 600V
Drain current: 12.5A
Pulsed drain current: 23A
Power dissipation: 55.5W
Case: PG-HSOF-8-3
Gate-source voltage: -10V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 3.2nC
Kind of package: tape
Kind of channel: enhanced
Gate current: 7.7mA
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
6+12.2 EUR
7+ 11.54 EUR
Mindestbestellmenge: 6
IRLZ24NSTRLPBF irlz24nspbf.pdf
IRLZ24NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 18A; 45W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 18A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±16V
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
IRFP3077PBF irfp3077pbf.pdf
IRFP3077PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 200A; 340W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 200A
Power dissipation: 340W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1+71.5 EUR
IR2117PBF ir2117.pdf
IR2117PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Operating temperature: -40...125°C
Mounting: THT
Kind of package: tube
Turn-off time: 105ns
Output current: -420...200mA
Type of integrated circuit: driver
Number of channels: 1
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Voltage class: 600V
Case: DIP8
Power: 1W
Supply voltage: 10...20V DC
Turn-on time: 125ns
auf Bestellung 301 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
22+3.39 EUR
31+ 2.37 EUR
32+ 2.25 EUR
Mindestbestellmenge: 22
IR2117SPBF description ir2117.pdf
IR2117SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
auf Bestellung 166 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
36+2 EUR
40+ 1.79 EUR
52+ 1.39 EUR
55+ 1.32 EUR
Mindestbestellmenge: 36
IR2111PBF description ir2111.pdf
IR2111PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 830ns
Turn-off time: 190ns
auf Bestellung 112 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
24+3.03 EUR
31+ 2.37 EUR
32+ 2.25 EUR
Mindestbestellmenge: 24
IR2111SPBF description IR2111SPBF.pdf
IR2111SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 830ns
Turn-off time: 190ns
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
24+3.03 EUR
27+ 2.72 EUR
35+ 2.1 EUR
36+ 1.99 EUR
Mindestbestellmenge: 24
BC847PNH6327XTSA1 BC846PNH6327.pdf
BC847PNH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
auf Bestellung 2140 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
295+0.25 EUR
520+ 0.14 EUR
680+ 0.11 EUR
715+ 0.1 EUR
Mindestbestellmenge: 295
BSP125H6327XTSA1 BSP125H6327XTSA1.pdf
BSP125H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Mounting: SMD
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT223
Drain-source voltage: 600V
Drain current: 0.12A
On-state resistance: 45Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
auf Bestellung 1133 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
74+0.97 EUR
88+ 0.81 EUR
152+ 0.47 EUR
161+ 0.44 EUR
1000+ 0.43 EUR
Mindestbestellmenge: 74
BSS87H6327FTSA1 BSS87H6327FTSA1.pdf
BSS87H6327FTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.26A; 1W; SOT89-4
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.26A
Power dissipation: 1W
Case: SOT89-4
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 1015 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
112+0.64 EUR
139+ 0.51 EUR
162+ 0.44 EUR
184+ 0.39 EUR
268+ 0.27 EUR
283+ 0.25 EUR
1000+ 0.24 EUR
Mindestbestellmenge: 112
BSS225H6327FTSA1 BSS225H6327FTSA1.pdf
BSS225H6327FTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89
Mounting: SMD
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT89
Drain-source voltage: 600V
Drain current: 0.09A
On-state resistance: 45Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
auf Bestellung 544 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
107+0.67 EUR
118+ 0.61 EUR
207+ 0.35 EUR
220+ 0.33 EUR
500+ 0.32 EUR
Mindestbestellmenge: 107
BSS315PH6327XTSA1 BSS315PH6327XTSA1-dte.pdf
BSS315PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23
Mounting: SMD
Case: PG-SOT23
Technology: OptiMOS™ P2
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Drain current: -1.5A
Power dissipation: 0.5W
Polarisation: unipolar
Drain-source voltage: -30V
auf Bestellung 4868 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
143+0.5 EUR
196+ 0.37 EUR
323+ 0.22 EUR
371+ 0.19 EUR
676+ 0.11 EUR
715+ 0.1 EUR
Mindestbestellmenge: 143
BSD235NH6327XTSA1 BSD235NH6327XTSA1.pdf
BSD235NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.95A; 0.5W; SOT363
Type of transistor: N-MOSFET x2
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.95A
Power dissipation: 0.5W
Case: SOT363
Gate-source voltage: ±12V
On-state resistance: 0.35Ω
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 2170 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
173+0.41 EUR
230+ 0.31 EUR
336+ 0.21 EUR
371+ 0.19 EUR
603+ 0.12 EUR
633+ 0.11 EUR
Mindestbestellmenge: 173
BSD840NH6327XTSA1 BSD840NH6327XTSA1.pdf
BSD840NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.88A; 0.5W; SOT363
Type of transistor: N-MOSFET x2
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.88A
Power dissipation: 0.5W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 5300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
173+0.41 EUR
224+ 0.32 EUR
353+ 0.2 EUR
404+ 0.18 EUR
736+ 0.097 EUR
770+ 0.093 EUR
Mindestbestellmenge: 173
BSS214NH6327XTSA1 BSS214NH6327XTSA1.pdf
BSS214NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 2195 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
173+0.41 EUR
264+ 0.27 EUR
429+ 0.17 EUR
484+ 0.15 EUR
832+ 0.086 EUR
881+ 0.081 EUR
Mindestbestellmenge: 173
BSL307SPH6327XTSA1 BSL307SPH6327XTSA1-DTE.pdf
BSL307SPH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.5A; 2W; PG-TSOP-6
Mounting: SMD
Case: PG-TSOP-6
Technology: OptiMOS™ P
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -30V
Drain current: -5.5A
On-state resistance: 43mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Produkt ist nicht verfügbar
BSS214NWH6327XTSA1 BSS214NWH6327XTSA1.pdf
BSS214NWH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT323
Drain-source voltage: 20V
Drain current: 1.5A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±12V
Mounting: SMD
Case: SOT323
auf Bestellung 3830 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
167+0.43 EUR
309+ 0.23 EUR
432+ 0.17 EUR
497+ 0.14 EUR
851+ 0.084 EUR
900+ 0.08 EUR
Mindestbestellmenge: 167
BSP324H6327XTSA1 BSP324H6327XTSA1.pdf
BSP324H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 0.17A; 1.8W; SOT223
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Power dissipation: 1.8W
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 400V
Drain current: 0.17A
On-state resistance: 25Ω
Type of transistor: N-MOSFET
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
80+0.9 EUR
96+ 0.75 EUR
155+ 0.46 EUR
164+ 0.44 EUR
Mindestbestellmenge: 80
IRL2505PBF description irl2505pbf.pdf
IRL2505PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 104A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 104A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
auf Bestellung 142 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
29+2.53 EUR
35+ 2.04 EUR
47+ 1.53 EUR
50+ 1.46 EUR
Mindestbestellmenge: 29
IRL2505STRLPBF irl2505spbf.pdf?fileId=5546d462533600a40153565b75022502
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 74A; Idm: 360A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 74A
Pulsed drain current: 360A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRF7201TRPBF description IRF7201TRPBF.pdf
IRF7201TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRF7205TRPBF description irf7205pbf.pdf
IRF7205TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
auf Bestellung 2843 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
82+0.87 EUR
208+ 0.34 EUR
221+ 0.32 EUR
Mindestbestellmenge: 82
IPD50N10S3L16ATMA1 Infineon-IPD50N10S3L_16-DS-v01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a908698d3594e&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 38A; Idm: 200A
Polarisation: unipolar
Technology: OptiMOS® -T
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 200A
Mounting: SMD
Case: PG-TO252-3-11
Drain-source voltage: 100V
Drain current: 38A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 100W
Produkt ist nicht verfügbar
BSZ150N10LS3GATMA1 BSZ150N10LS3G-DTE.pdf
BSZ150N10LS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPA050N10NM5SXKSA1 Infineon-IPA050N10NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cfdf4f16e2d
IPA050N10NM5SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 264A; 38W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 47A
Pulsed drain current: 264A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IAUT150N10S5N035ATMA1 IAUT150N10S5N035.pdf
IAUT150N10S5N035ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 166W; PG-HSOF-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Power dissipation: 166W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
IGW40N120H3FKSA1 IGW40N120H3-DTE.pdf
IGW40N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 483W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 483W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H3
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
8+9.22 EUR
11+ 6.66 EUR
Mindestbestellmenge: 8
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