auf Bestellung 827 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 4.22 EUR |
10+ | 3.5 EUR |
100+ | 2.8 EUR |
500+ | 2.36 EUR |
1000+ | 1.9 EUR |
5000+ | 1.85 EUR |
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Technische Details IPA050N10NM5SXKSA1 Infineon Technologies
Description: MOSFET N-CH 100V 66A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 66A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 33A, 10V, Power Dissipation (Max): 38W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 84µA, Supplier Device Package: PG-TO220 Full Pack, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 50 V.
Weitere Produktangebote IPA050N10NM5SXKSA1 nach Preis ab 1.97 EUR bis 5.33 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IPA050N10NM5SXKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 66A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 33A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 84µA Supplier Device Package: PG-TO220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 50 V |
auf Bestellung 660 Stücke: Lieferzeit 10-14 Tag (e) |
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IPA050N10NM5SXKSA1 | Hersteller : Infineon Technologies | Power Transistor MOSFET |
Produkt ist nicht verfügbar |
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IPA050N10NM5SXKSA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 100V 66A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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IPA050N10NM5SXKSA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 100V 66A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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IPA050N10NM5SXKSA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 100V 66A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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IPA050N10NM5SXKSA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 100V 66A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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IPA050N10NM5SXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 264A; 38W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 47A Pulsed drain current: 264A Power dissipation: 38W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPA050N10NM5SXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 264A; 38W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 47A Pulsed drain current: 264A Power dissipation: 38W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |