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SPW17N80C3 Infineon Technologies
auf Bestellung 613 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 8.55 EUR |
10+ | 7.18 EUR |
25+ | 6.79 EUR |
100+ | 5.81 EUR |
240+ | 5.49 EUR |
480+ | 5.17 EUR |
1200+ | 4.42 EUR |
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Technische Details SPW17N80C3 Infineon Technologies
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 227W; PG-TO247-3, Type of transistor: N-MOSFET, Technology: CoolMOS™, Polarisation: unipolar, Drain-source voltage: 800V, Drain current: 11A, Power dissipation: 227W, Case: PG-TO247-3, Gate-source voltage: ±20V, On-state resistance: 0.29Ω, Mounting: THT, Kind of package: tube, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SPW17N80C3
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SPW17N80C3 Produktcode: 38747 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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SPW17N80C3 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 227W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Power dissipation: 227W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.29Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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![]() |
SPW17N80C3 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 227W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Power dissipation: 227W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.29Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |