IRF6655TRPBF Infineon Technologies
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Technische Details IRF6655TRPBF Infineon Technologies
Description: MOSFET N-CH 100V 4.2A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric SH, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 19A (Tc), Rds On (Max) @ Id, Vgs: 62mOhm @ 5A, 10V, Power Dissipation (Max): 2.2W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 4.8V @ 25µA, Supplier Device Package: DIRECTFET™ SH, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V.
Weitere Produktangebote IRF6655TRPBF
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IRF6655TRPBF | Hersteller : INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 4.2A; 42W; DirectFET Mounting: SMD Power dissipation: 42W Polarisation: unipolar Technology: HEXFET® Drain current: 4.2A Kind of channel: enhanced Drain-source voltage: 100V Type of transistor: N-MOSFET Kind of package: reel Case: DirectFET Anzahl je Verpackung: 4800 Stücke |
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IRF6655TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 100V 4.2A 6-Pin Direct-FET SH T/R |
Produkt ist nicht verfügbar |
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IRF6655TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 4.2A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric SH Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 19A (Tc) Rds On (Max) @ Id, Vgs: 62mOhm @ 5A, 10V Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 25µA Supplier Device Package: DIRECTFET™ SH Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRF6655TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; 42W; DirectFET Mounting: SMD Power dissipation: 42W Polarisation: unipolar Technology: HEXFET® Drain current: 4.2A Kind of channel: enhanced Drain-source voltage: 100V Type of transistor: N-MOSFET Kind of package: reel Case: DirectFET |
Produkt ist nicht verfügbar |