IPD30N08S2L21ATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesTrans MOSFET N-CH 75V 30A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
auf Bestellung 4979 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 186+ | 0.82 EUR |
| 193+ | 0.77 EUR |
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Technische Details IPD30N08S2L21ATMA1 Infineon Technologies
Description: MOSFET N-CH 75V 30A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 20.5mOhm @ 25A, 10V, Power Dissipation (Max): 136W (Tc), Vgs(th) (Max) @ Id: 2V @ 80µA, Supplier Device Package: PG-TO252-3-11, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V.
Weitere Produktangebote IPD30N08S2L21ATMA1 nach Preis ab 0.87 EUR bis 2.64 EUR
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IPD30N08S2L21ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 75V 30A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2387 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD30N08S2L21ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 75V 30A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2387 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD30N08S2L21ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 75V 30A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 20.5mOhm @ 25A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2V @ 80µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V |
auf Bestellung 17500 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD30N08S2L21ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 75V 30A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD30N08S2L21ATMA1 | Hersteller : Infineon Technologies |
MOSFETs N-Ch 75V 30A DPAK-2 OptiMOS |
auf Bestellung 38656 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD30N08S2L21ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 75V 30A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 20.5mOhm @ 25A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2V @ 80µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V |
auf Bestellung 20061 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD30N08S2L21ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 75V 30A Automotive 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IPD30N08S2L21ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 75V 30A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| IPD30N08S2L21ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 75V; 30A; Idm: 120A; 136W Type of transistor: N-MOSFET Technology: OptiMOS® Polarisation: unipolar Drain-source voltage: 75V Drain current: 30A Pulsed drain current: 120A Power dissipation: 136W Case: PG-TO252-3-11 Gate-source voltage: ±20V On-state resistance: 20.5mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| IPD30N08S2L21ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 75V; 30A; Idm: 120A; 136W Type of transistor: N-MOSFET Technology: OptiMOS® Polarisation: unipolar Drain-source voltage: 75V Drain current: 30A Pulsed drain current: 120A Power dissipation: 136W Case: PG-TO252-3-11 Gate-source voltage: ±20V On-state resistance: 20.5mΩ Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |