auf Bestellung 240 Stücke:
Lieferzeit 150-154 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 7.81 EUR |
| 10+ | 7.04 EUR |
| 25+ | 5.74 EUR |
| 100+ | 5.42 EUR |
| 240+ | 3.27 EUR |
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Technische Details IPW65R190CFD7AXKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 14A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V, Power Dissipation (Max): 77W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 320µA, Supplier Device Package: PG-TO247-3, Grade: Automotive, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V, Qualification: AEC-Q101.
Weitere Produktangebote IPW65R190CFD7AXKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| IPW65R190CFD7AXKSA1 | Hersteller : Infineon Technologies |
 N-Channel MOSFET Transistor |
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IPW65R190CFD7AXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 14A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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IPW65R190CFD7AXKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 650V 14A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V Power Dissipation (Max): 77W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 320µA Supplier Device Package: PG-TO247-3 Grade: Automotive Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |