IPC70N04S5L4R2ATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 70A 8TDSON-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 35A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 17µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 70A 8TDSON-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 35A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 17µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.64 EUR |
10000+ | 0.63 EUR |
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Technische Details IPC70N04S5L4R2ATMA1 Infineon Technologies
Description: MOSFET N-CH 40V 70A 8TDSON-34, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 35A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 2V @ 17µA, Supplier Device Package: PG-TDSON-8-34, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote IPC70N04S5L4R2ATMA1 nach Preis ab 0.68 EUR bis 2.53 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis ohne MwSt | ||||||||||||||
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IPC70N04S5L4R2ATMA1 | Hersteller : Infineon Technologies | MOSFETs MOSFET_(20V,40V) |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPC70N04S5L4R2ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 70A 8TDSON-34 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 35A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 17µA Supplier Device Package: PG-TDSON-8-34 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 14790 Stücke: Lieferzeit 10-14 Tag (e) |
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IPC70N04S5L4R2ATMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 40V 70A Automotive 8-Pin TDSON EP T/R |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |