IPB50R199CPATMA1 Infineon Technologies
auf Bestellung 970 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 5.54 EUR |
| 10+ | 4.66 EUR |
| 25+ | 4.4 EUR |
| 100+ | 3.77 EUR |
| 250+ | 3.57 EUR |
| 500+ | 3.36 EUR |
| 1000+ | 2.87 EUR |
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Technische Details IPB50R199CPATMA1 Infineon Technologies
Description: MOSFET N-CH 550V 17A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V, Power Dissipation (Max): 139W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 660µA, Supplier Device Package: PG-TO263-3-2, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 550 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 100 V.
Weitere Produktangebote IPB50R199CPATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IPB50R199CPATMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 550V 17A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IPB50R199CPATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 550V 17A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IPB50R199CPATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; PG-TO263-3 Mounting: SMD Case: PG-TO263-3 Drain-source voltage: 500V Drain current: 17A On-state resistance: 0.199Ω Type of transistor: N-MOSFET Power dissipation: 139W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPB50R199CPATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 550V 17A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V Power Dissipation (Max): 139W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 660µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 550 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 100 V |
Produkt ist nicht verfügbar |
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IPB50R199CPATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; PG-TO263-3 Mounting: SMD Case: PG-TO263-3 Drain-source voltage: 500V Drain current: 17A On-state resistance: 0.199Ω Type of transistor: N-MOSFET Power dissipation: 139W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhanced Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |