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IPP50R250CPXKSA1 INFINEON TECHNOLOGIES
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Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Power dissipation: 114W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 500V
Drain current: 13A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 482 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
23+ | 3.12 EUR |
27+ | 2.75 EUR |
31+ | 2.37 EUR |
32+ | 2.25 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPP50R250CPXKSA1 INFINEON TECHNOLOGIES
Description: LOW POWER_LEGACY, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V, Power Dissipation (Max): 114W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 520µA, Supplier Device Package: PG-TO220-3-1, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V.
Weitere Produktangebote IPP50R250CPXKSA1 nach Preis ab 1.9 EUR bis 4.73 EUR
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IPP50R250CPXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO220-3 Mounting: THT Case: PG-TO220-3 Kind of package: tube Power dissipation: 114W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 500V Drain current: 13A On-state resistance: 0.25Ω Type of transistor: N-MOSFET |
auf Bestellung 482 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP50R250CPXKSA1 | Hersteller : Infineon Technologies |
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auf Bestellung 498 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP50R250CPXKSA1 | Hersteller : Infineon Technologies |
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auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP50R250CPXKSA1 | Hersteller : Infineon Technologies |
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auf Bestellung 261 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP50R250CPXKSA1 | Hersteller : Infineon Technologies |
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auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP50R250CPXKSA1 Produktcode: 185293 |
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Produkt ist nicht verfügbar
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IPP50R250CPXKSA1 | Hersteller : Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V Power Dissipation (Max): 114W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 520µA Supplier Device Package: PG-TO220-3-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V |
Produkt ist nicht verfügbar |