auf Bestellung 980 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.34 EUR |
| 10+ | 2.09 EUR |
| 100+ | 1.87 EUR |
| 500+ | 1.75 EUR |
| 1000+ | 1.51 EUR |
| 5000+ | 1.46 EUR |
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Technische Details IPA50R190CEXKSA2 Infineon Technologies
Description: MOSFET N-CH 500V 18.5A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 13V, Power Dissipation (Max): 32W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 510µA, Supplier Device Package: PG-TO220-FP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 13V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 47.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 100 V.
Weitere Produktangebote IPA50R190CEXKSA2 nach Preis ab 1.59 EUR bis 4.42 EUR
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IPA50R190CEXKSA2 | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 500V 18.5A TO220Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 13V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 510µA Supplier Device Package: PG-TO220-FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 13V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 47.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 100 V |
auf Bestellung 507 Stücke: Lieferzeit 10-14 Tag (e) |
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IPA50R190CEXKSA2 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 500V 24.8A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA50R190CEXKSA2 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 32W; TO220FP Mounting: THT Case: TO220FP Drain-source voltage: 500V Drain current: 18.5A On-state resistance: 0.19Ω Type of transistor: N-MOSFET Power dissipation: 32W Polarisation: unipolar Kind of package: tube Technology: CoolMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPA50R190CEXKSA2 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 500V 24.8A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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IPA50R190CEXKSA2 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 500V 24.8A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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IPA50R190CEXKSA2 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 32W; TO220FP Mounting: THT Case: TO220FP Drain-source voltage: 500V Drain current: 18.5A On-state resistance: 0.19Ω Type of transistor: N-MOSFET Power dissipation: 32W Polarisation: unipolar Kind of package: tube Technology: CoolMOS™ Kind of channel: enhanced Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |