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IPP60R180C7XKSA1 IPP60R180C7XKSA1 INFINEON TECHNOLOGIES IPP60R180C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 68W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 68W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R180P7XKSA1 INFINEON TECHNOLOGIES Infineon-IPP60R180P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bdc7fff3cbb Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 72W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 53A
Power dissipation: 72W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R190C6XKSA1 IPP60R190C6XKSA1 INFINEON TECHNOLOGIES IPP60R190C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 600V
Drain current: 20.2A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 151W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ C6
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 44 Stücke:
Lieferzeit 7-14 Tag (e)
13+5.65 EUR
15+ 4.99 EUR
17+ 4.32 EUR
18+ 4.09 EUR
Mindestbestellmenge: 13
IPP60R190E6XKSA1 IPP60R190E6XKSA1 INFINEON TECHNOLOGIES IPP60R190E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 600V
Drain current: 20.2A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 151W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ E6
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R190P6XKSA1 IPP60R190P6XKSA1 INFINEON TECHNOLOGIES IPP60R190P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 57 Stücke:
Lieferzeit 7-14 Tag (e)
23+3.16 EUR
33+ 2.22 EUR
35+ 2.09 EUR
500+ 2.06 EUR
Mindestbestellmenge: 23
IPP60R199CPXKSA1 IPP60R199CPXKSA1 INFINEON TECHNOLOGIES IPP60R199CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 139W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 43 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.75 EUR
23+ 3.17 EUR
24+ 3 EUR
50+ 2.95 EUR
100+ 2.9 EUR
Mindestbestellmenge: 16
IPP60R250CPXKSA1 IPP60R250CPXKSA1 INFINEON TECHNOLOGIES IPP60R250CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R280CFD7 IPP60R280CFD7 INFINEON TECHNOLOGIES IPP60R280CFD7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 52W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 52W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.536Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R280E6XKSA1 IPP60R280E6XKSA1 INFINEON TECHNOLOGIES IPP60R280E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R280P6XKSA1 IPP60R280P6XKSA1 INFINEON TECHNOLOGIES IPP60R280P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R280P7 IPP60R280P7 INFINEON TECHNOLOGIES IPP60R280P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R299CPXKSA1 IPP60R299CPXKSA1 INFINEON TECHNOLOGIES IPP60R299CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 96W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 96W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R330P6XKSA1 IPP60R330P6XKSA1 INFINEON TECHNOLOGIES IPP60R330P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 93W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 93W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R360CFD7XKSA1 IPP60R360CFD7XKSA1 INFINEON TECHNOLOGIES Infineon-IPP60R360CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016fc7b033f30d49 Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ CFD7; unipolar; 650V; 5A; Idm: 24A
Type of transistor: N-MOSFET
Technology: CoolMOS™ CFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 24A
Power dissipation: 43W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 674mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R360P7XKSA1 IPP60R360P7XKSA1 INFINEON TECHNOLOGIES IPP60R360P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 41W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R380C6XKSA1 IPP60R380C6XKSA1 INFINEON TECHNOLOGIES IPP60R380C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R385CPXKSA1 IPP60R385CPXKSA1 INFINEON TECHNOLOGIES IPP60R385CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R520C6XKSA1 IPP60R520C6XKSA1 INFINEON TECHNOLOGIES IPP60R520C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.1A; 66W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.1A
Power dissipation: 66W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.52Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R520E6XKSA1 IPP60R520E6XKSA1 INFINEON TECHNOLOGIES IPP60R520E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.1A; 66W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.1A
Power dissipation: 66W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.52Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R600C6XKSA1 IPP60R600C6XKSA1 INFINEON TECHNOLOGIES IPP60R600C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R600E6XKSA1 IPP60R600E6XKSA1 INFINEON TECHNOLOGIES IPP60R600E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R600P7XKSA1 IPP60R600P7XKSA1 INFINEON TECHNOLOGIES IPP60R600P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; 30W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Power dissipation: 30W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 9nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R950C6XKSA1 IPP60R950C6XKSA1 INFINEON TECHNOLOGIES IPP60R950C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 37W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.4A
Power dissipation: 37W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 500 Stücke
Produkt ist nicht verfügbar
IPP65R045C7XKSA1 IPP65R045C7XKSA1 INFINEON TECHNOLOGIES IPP65R045C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 227W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP65R065C7XKSA1 IPP65R065C7XKSA1 INFINEON TECHNOLOGIES IPP65R065C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Power dissipation: 171W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP65R095C7XKSA1 IPP65R095C7XKSA1 INFINEON TECHNOLOGIES IPP65R095C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 128W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 128W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP65R099C6XKSA1 IPP65R099C6XKSA1 INFINEON TECHNOLOGIES IPP65R099C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP65R110CFDXKSA1 IPP65R110CFDXKSA1 INFINEON TECHNOLOGIES IPP65R110CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP65R125C7XKSA1 IPP65R125C7XKSA1 INFINEON TECHNOLOGIES IPP65R125C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 101W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 101W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP65R150CFDXKSA1 IPP65R150CFDXKSA1 INFINEON TECHNOLOGIES IPP65R150CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22.4A; 195.3W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22.4A
Power dissipation: 195.3W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP65R190C6XKSA1 IPP65R190C6XKSA1 INFINEON TECHNOLOGIES IPP65R190C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP65R190C7FKSA1 IPP65R190C7FKSA1 INFINEON TECHNOLOGIES IPP65R190C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; 72W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 72W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP65R190CFDXKSA1 IPP65R190CFDXKSA1 INFINEON TECHNOLOGIES IPP65R190CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP65R190E6XKSA1 IPP65R190E6XKSA1 INFINEON TECHNOLOGIES IPP65R190E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP65R225C7XKSA1 IPP65R225C7XKSA1 INFINEON TECHNOLOGIES IPP65R225C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.225Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP65R280E6XKSA1 IPP65R280E6XKSA1 INFINEON TECHNOLOGIES IPP65R280E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP65R310CFDXKSA1 IPP65R310CFDXKSA1 INFINEON TECHNOLOGIES IPP65R310CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11.4A
Power dissipation: 104.2W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP65R420CFDXKSA1 IPP65R420CFDXKSA1 INFINEON TECHNOLOGIES IPP65R420CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.7A
Power dissipation: 83.3W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP77N06S212AKSA2 IPP77N06S212AKSA2 INFINEON TECHNOLOGIES IPP77N06S212.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 158W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 158W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 11.7mΩ
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP80N04S4L04AKSA1 IPP80N04S4L04AKSA1 INFINEON TECHNOLOGIES IPx80N04S4L-04.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 71W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 71W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP80N06S2H5AKSA2 IPP80N06S2H5AKSA2 INFINEON TECHNOLOGIES IPx80N06S2-H5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP80N06S2L07AKSA2 IPP80N06S2L07AKSA2 INFINEON TECHNOLOGIES IPP80N06S2L07-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 210W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 210W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP80R1K2P7XKSA1 IPP80R1K2P7XKSA1 INFINEON TECHNOLOGIES IPP80R1K2P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 380 Stücke:
Lieferzeit 7-14 Tag (e)
37+1.94 EUR
45+ 1.62 EUR
51+ 1.42 EUR
54+ 1.33 EUR
200+ 1.32 EUR
750+ 1.29 EUR
Mindestbestellmenge: 37
IPP80R280P7XKSA1 IPP80R280P7XKSA1 INFINEON TECHNOLOGIES IPP80R280P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10.6A; 101W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.6A
Power dissipation: 101W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP80R360P7XKSA1 IPP80R360P7XKSA1 INFINEON TECHNOLOGIES IPP80R360P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.58 EUR
50+ 2.76 EUR
Mindestbestellmenge: 20
IPP80R450P7XKSA1 IPP80R450P7XKSA1 INFINEON TECHNOLOGIES Infineon-IPP80R450P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e459bf0619fd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; Idm: 29A; 73W
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.1A
Pulsed drain current: 29A
Power dissipation: 73W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 67 Stücke:
Lieferzeit 7-14 Tag (e)
23+3.13 EUR
26+ 2.83 EUR
33+ 2.17 EUR
35+ 2.06 EUR
Mindestbestellmenge: 23
IPP80R600P7XKSA1 IPP80R600P7XKSA1 INFINEON TECHNOLOGIES IPP80R600P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 60W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.5A
Power dissipation: 60W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP80R750P7XKSA1 IPP80R750P7XKSA1 INFINEON TECHNOLOGIES IPP80R750P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Power dissipation: 51W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP90R340C3XKSA1 IPP90R340C3XKSA1 INFINEON TECHNOLOGIES IPP90R340C3XKSA1-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 9.5A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPS65R1K4C6AKMA1 INFINEON TECHNOLOGIES DS_IPS65R1K4C6.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433899edae01389e8ec2f0504f IPS65R1K4C6AKMA1 THT N channel transistors
Produkt ist nicht verfügbar
IPS65R1K5CEAKMA1 INFINEON TECHNOLOGIES Infineon-IPS65R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7acf11e1e92 INFN-S-A0001751085-1.pdf?t.download=true&u=5oefqw IPS65R1K5CEAKMA1 THT N channel transistors
auf Bestellung 970 Stücke:
Lieferzeit 7-14 Tag (e)
167+0.43 EUR
223+ 0.32 EUR
236+ 0.3 EUR
Mindestbestellmenge: 167
IPS65R400CEAKMA1 IPS65R400CEAKMA1 INFINEON TECHNOLOGIES IPS65R400CE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.5A; 118W; IPAK SL
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.5A
Power dissipation: 118W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 39nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPS65R950C6AKMA1 IPS65R950C6AKMA1 INFINEON TECHNOLOGIES IPS65R950C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.5A; 37W; IPAK SL
Mounting: THT
Case: IPAK SL
Power dissipation: 37W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 4.5A
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
On-state resistance: 0.95Ω
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPS70R1K4P7SAKMA1 IPS70R1K4P7SAKMA1 INFINEON TECHNOLOGIES IPS70R1K4P7S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.5A; 22.7W; IPAK SL
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.5A
Power dissipation: 22.7W
Case: IPAK SL
Gate-source voltage: ±16V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 4.7nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPS70R360P7SAKMA1 IPS70R360P7SAKMA1 INFINEON TECHNOLOGIES IPS70R360P7S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; IPAK SL
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: IPAK SL
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPS80R600P7AKMA1 INFINEON TECHNOLOGIES Infineon-IPS80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c1adc12ee6394 IPS80R600P7 THT N channel transistors
Produkt ist nicht verfügbar
IPS80R900P7AKMA1 IPS80R900P7AKMA1 INFINEON TECHNOLOGIES Infineon-IPS80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b4764f6817039 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK SL
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 41 Stücke:
Lieferzeit 7-14 Tag (e)
41+1.74 EUR
60+ 1.19 EUR
Mindestbestellmenge: 41
IPT004N03LATMA1 IPT004N03LATMA1 INFINEON TECHNOLOGIES IPT004N03L-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300A; Idm: 1200A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 300A
Pulsed drain current: 1.2kA
Power dissipation: 300W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 0.4mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPT007N06NATMA1 IPT007N06NATMA1 INFINEON TECHNOLOGIES IPT007N06N-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Gate charge: 216nC
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPT012N08N5ATMA1 INFINEON TECHNOLOGIES Infineon-IPT012N08N5-DS-v02_01-EN.pdf?fileId=5546d4624a75e5f1014aca59127a1eb9 IPT012N08N5ATMA1 SMD N channel transistors
Produkt ist nicht verfügbar
IPP60R180C7XKSA1 IPP60R180C7-DTE.pdf
IPP60R180C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 68W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 68W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R180P7XKSA1 Infineon-IPP60R180P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bdc7fff3cbb
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 72W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 53A
Power dissipation: 72W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R190C6XKSA1 IPP60R190C6-DTE.pdf
IPP60R190C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 600V
Drain current: 20.2A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 151W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ C6
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 44 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
13+5.65 EUR
15+ 4.99 EUR
17+ 4.32 EUR
18+ 4.09 EUR
Mindestbestellmenge: 13
IPP60R190E6XKSA1 IPP60R190E6-DTE.pdf
IPP60R190E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 600V
Drain current: 20.2A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 151W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ E6
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R190P6XKSA1 IPP60R190P6-DTE.pdf
IPP60R190P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 57 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
23+3.16 EUR
33+ 2.22 EUR
35+ 2.09 EUR
500+ 2.06 EUR
Mindestbestellmenge: 23
IPP60R199CPXKSA1 IPP60R199CP-DTE.pdf
IPP60R199CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 139W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 43 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
16+4.75 EUR
23+ 3.17 EUR
24+ 3 EUR
50+ 2.95 EUR
100+ 2.9 EUR
Mindestbestellmenge: 16
IPP60R250CPXKSA1 IPP60R250CP-DTE.pdf
IPP60R250CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R280CFD7 IPP60R280CFD7.pdf
IPP60R280CFD7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 52W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 52W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.536Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R280E6XKSA1 IPP60R280E6-DTE.pdf
IPP60R280E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R280P6XKSA1 IPP60R280P6-DTE.pdf
IPP60R280P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R280P7 IPP60R280P7.pdf
IPP60R280P7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R299CPXKSA1 IPP60R299CP-DTE.pdf
IPP60R299CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 96W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 96W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R330P6XKSA1 IPP60R330P6-DTE.pdf
IPP60R330P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 93W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 93W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R360CFD7XKSA1 Infineon-IPP60R360CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016fc7b033f30d49
IPP60R360CFD7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ CFD7; unipolar; 650V; 5A; Idm: 24A
Type of transistor: N-MOSFET
Technology: CoolMOS™ CFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 24A
Power dissipation: 43W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 674mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R360P7XKSA1 IPP60R360P7.pdf
IPP60R360P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 41W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R380C6XKSA1 IPP60R380C6-DTE.pdf
IPP60R380C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R385CPXKSA1 IPP60R385CP-DTE.pdf
IPP60R385CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R520C6XKSA1 IPP60R520C6-DTE.pdf
IPP60R520C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.1A; 66W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.1A
Power dissipation: 66W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.52Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R520E6XKSA1 IPP60R520E6-DTE.pdf
IPP60R520E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.1A; 66W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.1A
Power dissipation: 66W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.52Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R600C6XKSA1 IPP60R600C6-DTE.pdf
IPP60R600C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R600E6XKSA1 IPP60R600E6-DTE.pdf
IPP60R600E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R600P7XKSA1 IPP60R600P7.pdf
IPP60R600P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; 30W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Power dissipation: 30W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 9nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R950C6XKSA1 IPP60R950C6-DTE.pdf
IPP60R950C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 37W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.4A
Power dissipation: 37W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 500 Stücke
Produkt ist nicht verfügbar
IPP65R045C7XKSA1 IPP65R045C7-DTE.pdf
IPP65R045C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 227W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP65R065C7XKSA1 IPP65R065C7-DTE.pdf
IPP65R065C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Power dissipation: 171W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP65R095C7XKSA1 IPP65R095C7-DTE.pdf
IPP65R095C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 128W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 128W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP65R099C6XKSA1 IPP65R099C6-DTE.pdf
IPP65R099C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP65R110CFDXKSA1 IPP65R110CFD-DTE.pdf
IPP65R110CFDXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP65R125C7XKSA1 IPP65R125C7-DTE.pdf
IPP65R125C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 101W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 101W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP65R150CFDXKSA1 IPP65R150CFD-DTE.pdf
IPP65R150CFDXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22.4A; 195.3W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22.4A
Power dissipation: 195.3W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP65R190C6XKSA1 IPP65R190C6-DTE.pdf
IPP65R190C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP65R190C7FKSA1 IPP65R190C7-DTE.pdf
IPP65R190C7FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; 72W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 72W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP65R190CFDXKSA1 IPP65R190CFD-DTE.pdf
IPP65R190CFDXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP65R190E6XKSA1 IPP65R190E6-DTE.pdf
IPP65R190E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP65R225C7XKSA1 IPP65R225C7-DTE.pdf
IPP65R225C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.225Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP65R280E6XKSA1 IPP65R280E6-DTE.pdf
IPP65R280E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP65R310CFDXKSA1 IPP65R310CFD-DTE.pdf
IPP65R310CFDXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11.4A
Power dissipation: 104.2W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP65R420CFDXKSA1 IPP65R420CFD-DTE.pdf
IPP65R420CFDXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.7A
Power dissipation: 83.3W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP77N06S212AKSA2 IPP77N06S212.pdf
IPP77N06S212AKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 158W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 158W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 11.7mΩ
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP80N04S4L04AKSA1 IPx80N04S4L-04.pdf
IPP80N04S4L04AKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 71W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 71W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP80N06S2H5AKSA2 IPx80N06S2-H5.pdf
IPP80N06S2H5AKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP80N06S2L07AKSA2 IPP80N06S2L07-DTE.pdf
IPP80N06S2L07AKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 210W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 210W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP80R1K2P7XKSA1 IPP80R1K2P7.pdf
IPP80R1K2P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 380 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
37+1.94 EUR
45+ 1.62 EUR
51+ 1.42 EUR
54+ 1.33 EUR
200+ 1.32 EUR
750+ 1.29 EUR
Mindestbestellmenge: 37
IPP80R280P7XKSA1 IPP80R280P7.pdf
IPP80R280P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10.6A; 101W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.6A
Power dissipation: 101W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP80R360P7XKSA1 IPP80R360P7.pdf
IPP80R360P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
20+3.58 EUR
50+ 2.76 EUR
Mindestbestellmenge: 20
IPP80R450P7XKSA1 Infineon-IPP80R450P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e459bf0619fd
IPP80R450P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; Idm: 29A; 73W
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.1A
Pulsed drain current: 29A
Power dissipation: 73W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 67 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
23+3.13 EUR
26+ 2.83 EUR
33+ 2.17 EUR
35+ 2.06 EUR
Mindestbestellmenge: 23
IPP80R600P7XKSA1 IPP80R600P7.pdf
IPP80R600P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 60W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.5A
Power dissipation: 60W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP80R750P7XKSA1 IPP80R750P7.pdf
IPP80R750P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Power dissipation: 51W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP90R340C3XKSA1 IPP90R340C3XKSA1-DTE.pdf
IPP90R340C3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 9.5A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPS65R1K4C6AKMA1 DS_IPS65R1K4C6.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433899edae01389e8ec2f0504f
Hersteller: INFINEON TECHNOLOGIES
IPS65R1K4C6AKMA1 THT N channel transistors
Produkt ist nicht verfügbar
IPS65R1K5CEAKMA1 Infineon-IPS65R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7acf11e1e92 INFN-S-A0001751085-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
IPS65R1K5CEAKMA1 THT N channel transistors
auf Bestellung 970 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
167+0.43 EUR
223+ 0.32 EUR
236+ 0.3 EUR
Mindestbestellmenge: 167
IPS65R400CEAKMA1 IPS65R400CE.pdf
IPS65R400CEAKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.5A; 118W; IPAK SL
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.5A
Power dissipation: 118W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 39nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPS65R950C6AKMA1 IPS65R950C6-DTE.pdf
IPS65R950C6AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.5A; 37W; IPAK SL
Mounting: THT
Case: IPAK SL
Power dissipation: 37W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 4.5A
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
On-state resistance: 0.95Ω
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPS70R1K4P7SAKMA1 IPS70R1K4P7S.pdf
IPS70R1K4P7SAKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.5A; 22.7W; IPAK SL
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.5A
Power dissipation: 22.7W
Case: IPAK SL
Gate-source voltage: ±16V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 4.7nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPS70R360P7SAKMA1 IPS70R360P7S.pdf
IPS70R360P7SAKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; IPAK SL
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: IPAK SL
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPS80R600P7AKMA1 Infineon-IPS80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c1adc12ee6394
Hersteller: INFINEON TECHNOLOGIES
IPS80R600P7 THT N channel transistors
Produkt ist nicht verfügbar
IPS80R900P7AKMA1 Infineon-IPS80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b4764f6817039
IPS80R900P7AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK SL
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 41 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
41+1.74 EUR
60+ 1.19 EUR
Mindestbestellmenge: 41
IPT004N03LATMA1 IPT004N03L-DTE.pdf
IPT004N03LATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300A; Idm: 1200A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 300A
Pulsed drain current: 1.2kA
Power dissipation: 300W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 0.4mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPT007N06NATMA1 IPT007N06N-DTE.pdf
IPT007N06NATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Gate charge: 216nC
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPT012N08N5ATMA1 Infineon-IPT012N08N5-DS-v02_01-EN.pdf?fileId=5546d4624a75e5f1014aca59127a1eb9
Hersteller: INFINEON TECHNOLOGIES
IPT012N08N5ATMA1 SMD N channel transistors
Produkt ist nicht verfügbar
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