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IPP60R380C6XKSA1

IPP60R380C6XKSA1 Infineon Technologies


Infineon-IPP60R380C6-DataSheet-v02_04-EN-1227239.pdf Hersteller: Infineon Technologies
MOSFET N-Ch 600V 10.6A TO220-3 CoolMOS C6
auf Bestellung 500 Stücke:

Lieferzeit 10-14 Tag (e)
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Technische Details IPP60R380C6XKSA1 Infineon Technologies

Description: MOSFET N-CH 600V 10.6A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 320µA, Supplier Device Package: PG-TO220-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V.

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IPP60R380C6XKSA1 IPP60R380C6XKSA1 Hersteller : ROCHESTER ELECTRONICS Infineon-IPP60R380C6-DS-v02_02-EN.pdf?fileId=db3a30432239cccd012297d36a554479 Description: ROCHESTER ELECTRONICS - IPP60R380C6XKSA1 - IPP60R380 10.6A, 600V, N-CHANEL POWER M
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
IPP60R380C6XKSA1 IPP60R380C6XKSA1 Hersteller : Infineon Technologies infineon-ipa60r380c6-datasheet-v02_04-en.pdf Trans MOSFET N-CH 600V 10.6A 3-Pin(3+Tab) TO-220 Tube
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IPP60R380C6XKSA1 IPP60R380C6XKSA1 Hersteller : INFINEON TECHNOLOGIES IPP60R380C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R380C6XKSA1 IPP60R380C6XKSA1 Hersteller : Infineon Technologies IPP60R380C6_2_0.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a30432239cccd012297d36a554479 Description: MOSFET N-CH 600V 10.6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
Produkt ist nicht verfügbar
IPP60R380C6XKSA1 IPP60R380C6XKSA1 Hersteller : INFINEON TECHNOLOGIES IPP60R380C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar