auf Bestellung 363 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 6.3 EUR |
| 10+ | 5.65 EUR |
| 100+ | 4.63 EUR |
| 500+ | 3.96 EUR |
| 1000+ | 3.54 EUR |
| 5000+ | 3.22 EUR |
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Technische Details IPP80N06S2L07AKSA2 Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V, Power Dissipation (Max): 210W (Tc), Vgs(th) (Max) @ Id: 2V @ 150µA, Supplier Device Package: PG-TO220-3-1, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3160 pF @ 25 V.
Weitere Produktangebote IPP80N06S2L07AKSA2 nach Preis ab 3.27 EUR bis 7 EUR
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IPP80N06S2L07AKSA2 | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 55V 80A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 2V @ 150µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3160 pF @ 25 V |
auf Bestellung 173 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP80N06S2L07AKSA2 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 55V 80A Automotive 3-Pin(3+Tab) TO-220 Tube |
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IPP80N06S2L07AKSA2 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 210W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A Power dissipation: 210W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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IPP80N06S2L07AKSA2 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 210W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A Power dissipation: 210W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |