![IPP60R600P7XKSA1 IPP60R600P7XKSA1](https://www.mouser.com/images/mouserelectronics/lrg/TO_220_AB_3_SPL.jpg)
auf Bestellung 1000 Stücke:
Lieferzeit 129-133 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 3.06 EUR |
10+ | 1.88 EUR |
100+ | 1.44 EUR |
500+ | 1.24 EUR |
1000+ | 1.01 EUR |
2500+ | 0.95 EUR |
5000+ | 0.9 EUR |
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Technische Details IPP60R600P7XKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 6A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 4V @ 80µA, Supplier Device Package: PG-TO220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V.
Weitere Produktangebote IPP60R600P7XKSA1
Foto | Bezeichnung | Hersteller | Beschreibung |
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IPP60R600P7XKSA1 | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |
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IPP60R600P7XKSA1 | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |
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IPP60R600P7XKSA1 | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |
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IPP60R600P7XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 4A; 30W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 4A Power dissipation: 30W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: THT Gate charge: 9nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPP60R600P7XKSA1 | Hersteller : Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 80µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V |
Produkt ist nicht verfügbar |
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IPP60R600P7XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 4A; 30W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 4A Power dissipation: 30W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: THT Gate charge: 9nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |