Produkte > INFINEON TECHNOLOGIES > IPS80R600P7AKMA1
IPS80R600P7AKMA1

IPS80R600P7AKMA1 Infineon Technologies

Infineon-IPS80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c1adc12ee6394 Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 8A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO251-3-342
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
398+1.24 EUR
Mindestbestellmenge: 398
Produktrezensionen
Produktbewertung abgeben

Technische Details IPS80R600P7AKMA1 Infineon Technologies

Description: MOSFET N-CH 800V 8A TO251-3, Packaging: Bulk, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 170µA, Supplier Device Package: PG-TO251-3-342, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V.

Weitere Produktangebote IPS80R600P7AKMA1 nach Preis ab 1.42 EUR bis 3.77 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IPS80R600P7AKMA1 IPS80R600P7AKMA1 Hersteller : Infineon Technologies Infineon_IPS80R600P7_DataSheet_v02_02_EN-3165419.pdf MOSFET LOW POWER_NEW
auf Bestellung 147 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.77 EUR
10+ 3.41 EUR
100+ 2.73 EUR
500+ 1.9 EUR
1000+ 1.69 EUR
1500+ 1.43 EUR
10500+ 1.42 EUR
IPS80R600P7AKMA1 IPS80R600P7AKMA1 Hersteller : Infineon Technologies infineon-ips80r600p7-datasheet-v02_02-en.pdf 800V CoolMOS P7 Power Transistor
Produkt ist nicht verfügbar
IPS80R600P7AKMA1 Hersteller : INFINEON TECHNOLOGIES Infineon-IPS80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c1adc12ee6394 IPS80R600P7 THT N channel transistors
Produkt ist nicht verfügbar
IPS80R600P7AKMA1 IPS80R600P7AKMA1 Hersteller : Infineon Technologies Infineon-IPS80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c1adc12ee6394 Description: MOSFET N-CH 800V 8A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO251-3-342
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
Produkt ist nicht verfügbar