IPP60R330P6XKSA1 Infineon Technologies
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Technische Details IPP60R330P6XKSA1 Infineon Technologies
Description: MOSFET N-CH 600V 12A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 330mOhm @ 4.5A, 10V, Power Dissipation (Max): 93W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 370µA, Supplier Device Package: PG-TO220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 100 V.
Weitere Produktangebote IPP60R330P6XKSA1
Foto | Bezeichnung | Hersteller | Beschreibung |
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IPP60R330P6XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 93W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Power dissipation: 93W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.33Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPP60R330P6XKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 12A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 4.5A, 10V Power Dissipation (Max): 93W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 370µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 100 V |
Produkt ist nicht verfügbar |
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IPP60R330P6XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 93W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Power dissipation: 93W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.33Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |