IPL60R650P6SATMA1 Infineon Technologies
auf Bestellung 1276 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 2.69 EUR |
| 10+ | 2.18 EUR |
| 100+ | 1.69 EUR |
| 500+ | 1.43 EUR |
| 1000+ | 1.12 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPL60R650P6SATMA1 Infineon Technologies
Description: MOSFET N-CH 600V 6.7A 8THINPAK, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc), Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V, Power Dissipation (Max): 56.8W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 200µA, Supplier Device Package: 8-ThinPak (5x6), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V.
Weitere Produktangebote IPL60R650P6SATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
IPL60R650P6SATMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 600V 6.7A 8-Pin Thin-PAK EP T/R |
auf Bestellung 2056 Stücke: Lieferzeit 14-21 Tag (e) |
|
| IPL60R650P6SATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6.7A; 56.8W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.7A Power dissipation: 56.8W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.65Ω Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
 |
IPL60R650P6SATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 6.7A 8THINPAK Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V Power Dissipation (Max): 56.8W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 200µA Supplier Device Package: 8-ThinPak (5x6) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V |
Produkt ist nicht verfügbar |
|
|
|
IPL60R650P6SATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 6.7A 8THINPAK Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V Power Dissipation (Max): 56.8W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 200µA Supplier Device Package: 8-ThinPak (5x6) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V |
Produkt ist nicht verfügbar |
|
| IPL60R650P6SATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6.7A; 56.8W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.7A Power dissipation: 56.8W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.65Ω Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |