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IPB60R190C6ATMA1 IPB60R190C6ATMA1 INFINEON TECHNOLOGIES IPW60R190C6_2_1.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a304320d39d590121f895e912201a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO263-3
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 600V
Drain current: 20.2A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 151W
Polarisation: unipolar
Technology: CoolMOS™ C6
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
IPB60R199CPATMA1 IPB60R199CPATMA1 INFINEON TECHNOLOGIES IPB60R199CP-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO263-3
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 600V
Drain current: 16A
On-state resistance: 0.199Ω
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Technology: CoolMOS™ CP
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB60R250CPATMA1 IPB60R250CPATMA1 INFINEON TECHNOLOGIES IPB60R250CP-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO263-3-2
Mounting: SMD
Case: PG-TO263-3-2
Power dissipation: 104W
Polarisation: unipolar
Technology: CoolMOS™ CP
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 600V
Drain current: 12A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
IPB60R280C6ATMA1 IPB60R280C6ATMA1 INFINEON TECHNOLOGIES IPB60R280C6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO263-3
Technology: CoolMOS™ C6
Mounting: SMD
Power dissipation: 104W
Case: PG-TO263-3
Polarisation: unipolar
Drain current: 13.8A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB60R280P7ATMA1 IPB60R280P7ATMA1 INFINEON TECHNOLOGIES IPB60R280P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; D2PAK
Technology: CoolMOS™ P7
Mounting: SMD
Power dissipation: 53W
Case: D2PAK
Kind of package: reel
Polarisation: unipolar
Drain current: 8A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Gate charge: 18nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB60R299CPATMA1 IPB60R299CPATMA1 INFINEON TECHNOLOGIES IPB60R299CP-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 96W; PG-TO263-3
Mounting: SMD
Case: PG-TO263-3
Power dissipation: 96W
Technology: CoolMOS™ CP
Drain current: 11A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
On-state resistance: 0.299Ω
Gate-source voltage: ±20V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB60R360P7ATMA1 IPB60R360P7ATMA1 INFINEON TECHNOLOGIES IPB60R360P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 41W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB60R385CPATMA1 IPB60R385CPATMA1 INFINEON TECHNOLOGIES IPB60R385CP-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB64N25S320ATMA1 INFINEON TECHNOLOGIES Infineon-IPB64N25S3-20-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937af6620149&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 250V; 46A; Idm: 256A
Mounting: SMD
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS® -T
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 256A
Case: PG-TO263-3-2
Drain-source voltage: 250V
Drain current: 46A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
IPB65R045C7ATMA1 IPB65R045C7ATMA1 INFINEON TECHNOLOGIES IPB65R045C7-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO263-3
Technology: CoolMOS™
Case: PG-TO263-3
Mounting: SMD
On-state resistance: 45mΩ
Power dissipation: 227W
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Polarisation: unipolar
Drain current: 46A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB65R065C7ATMA1 IPB65R065C7ATMA1 INFINEON TECHNOLOGIES IPB65R065C7-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Power dissipation: 171W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB65R099C6ATMA1 IPB65R099C6ATMA1 INFINEON TECHNOLOGIES IPB65R099C6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB65R110CFDATMA1 IPB65R110CFDATMA1 INFINEON TECHNOLOGIES IPB65R110CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB65R125C7ATMA1 IPB65R125C7ATMA1 INFINEON TECHNOLOGIES IPB65R125C7-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 101W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 101W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB65R150CFDATMA1 IPB65R150CFDATMA1 INFINEON TECHNOLOGIES IPB65R150CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22.4A; 195.3W; PG-TO263-3
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 650V
Drain current: 22.4A
On-state resistance: 0.15Ω
Type of transistor: N-MOSFET
Power dissipation: 195.3W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB65R190C7ATMA1 IPB65R190C7ATMA1 INFINEON TECHNOLOGIES IPB65R190C7-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; 72W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 72W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB65R190CFDATMA1 IPB65R190CFDATMA1 INFINEON TECHNOLOGIES IPB65R190CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB65R225C7ATMA1 IPB65R225C7ATMA1 INFINEON TECHNOLOGIES IPB65R225C7-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO263-3
Technology: CoolMOS™
Case: PG-TO263-3
Mounting: SMD
On-state resistance: 0.225Ω
Power dissipation: 63W
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Polarisation: unipolar
Drain current: 11A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB65R280E6ATMA1 IPB65R280E6ATMA1 INFINEON TECHNOLOGIES IPB65R280E6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB65R310CFDATMA1 IPB65R310CFDATMA1 INFINEON TECHNOLOGIES IPB65R310CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO263-3
Drain-source voltage: 650V
Drain current: 11.4A
On-state resistance: 0.31Ω
Type of transistor: N-MOSFET
Power dissipation: 104.2W
Polarisation: unipolar
Case: PG-TO263-3
Mounting: SMD
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB65R380C6ATMA1 IPB65R380C6ATMA1 INFINEON TECHNOLOGIES IPB65R380C6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB65R420CFDATMA1 IPB65R420CFDATMA1 INFINEON TECHNOLOGIES IPB65R420CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 310W; PG-TO263-3
Technology: CoolMOS™
Case: PG-TO263-3
Mounting: SMD
On-state resistance: 0.42Ω
Power dissipation: 310W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 8.7A
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB65R660CFDATMA1 IPB65R660CFDATMA1 INFINEON TECHNOLOGIES IPB65R660CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO263-3
Technology: CoolMOS™
Case: PG-TO263-3
Mounting: SMD
On-state resistance: 0.66Ω
Power dissipation: 62.5W
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Polarisation: unipolar
Drain current: 6A
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
IPB80N04S2H4ATMA2 IPB80N04S2H4ATMA2 INFINEON TECHNOLOGIES IPB80N04S2H4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 103nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB80N06S2L07ATMA3 IPB80N06S2L07ATMA3 INFINEON TECHNOLOGIES IPB80N06S2L07.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 210W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 210W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 986 Stücke:
Lieferzeit 7-14 Tag (e)
24+3.05 EUR
36+ 2 EUR
38+ 1.89 EUR
1000+ 1.82 EUR
Mindestbestellmenge: 24
IPB80N06S405ATMA2 INFINEON TECHNOLOGIES Infineon-I80N06S4_05-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038d4d5340cec Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 320A; 107W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Pulsed drain current: 320A
Power dissipation: 107W
Case: PG-TO263-3-2
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
IPB80N08S2L07ATMA1 IPB80N08S2L07ATMA1 INFINEON TECHNOLOGIES IPB80N08S2L07.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 183nC
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
IPB80P04P4L04ATMA1 IPB80P04P4L04ATMA1 INFINEON TECHNOLOGIES Infineon-IPP_B_I80P04P4L_04-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f783241fb2e2a Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -80A; 125W; PG-TO263-3
Case: PG-TO263-3
Drain-source voltage: -40V
Drain current: -80A
On-state resistance: 4.4mΩ
Type of transistor: P-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 135nC
Technology: OptiMOS™ P2
Kind of channel: enhanced
Gate-source voltage: ±16V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB90R340C3ATMA1 IPB90R340C3ATMA1 INFINEON TECHNOLOGIES IPB90R340C3ATMA1-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 208W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 9.5A
Power dissipation: 208W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPC100N04S5-1R2 IPC100N04S5-1R2 INFINEON TECHNOLOGIES IPC100N04S51R2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 150W
Drain current: 100A
On-state resistance: 1.2mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 131nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
IPC100N04S5-1R7 IPC100N04S5-1R7 INFINEON TECHNOLOGIES IPC100N04S51R7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 115W
Drain current: 100A
On-state resistance: 1.7mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 83nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
IPC100N04S5-1R9 IPC100N04S5-1R9 INFINEON TECHNOLOGIES IPC100N04S51R9.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 100W
Drain current: 100A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 65nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPC100N04S5-2R8 IPC100N04S5-2R8 INFINEON TECHNOLOGIES IPC100N04S52R8.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 75W
Drain current: 100A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 45nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPC100N04S5L-1R1 IPC100N04S5L-1R1 INFINEON TECHNOLOGIES IPC100N04S5L1R1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 150W
Drain current: 100A
On-state resistance: 1.1mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.14µC
Kind of channel: enhanced
Gate-source voltage: ±16V
Drain-source voltage: 40V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPC100N04S5L-1R5 IPC100N04S5L-1R5 INFINEON TECHNOLOGIES IPC100N04S5L1R5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 115W
Drain current: 100A
On-state resistance: 1.5mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 95nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Drain-source voltage: 40V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPC100N04S5L-1R9 IPC100N04S5L-1R9 INFINEON TECHNOLOGIES IPC100N04S5L1R9.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 100W
Drain current: 100A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 81nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Drain-source voltage: 40V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPC100N04S5L-2R6 IPC100N04S5L-2R6 INFINEON TECHNOLOGIES IPC100N04S5L2R6.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 75W
Drain current: 100A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 55nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Drain-source voltage: 40V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPC50N04S5-5R8 IPC50N04S5-5R8 INFINEON TECHNOLOGIES IPC50N04S55R8.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 42W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPC50N04S5L-5R5 IPC50N04S5L-5R5 INFINEON TECHNOLOGIES IPC50N04S5L5R5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 42W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPC70N04S5-4R6 IPC70N04S5-4R6 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 24.2nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPC70N04S5L-4R2 IPC70N04S5L-4R2 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPC90N04S5-3R6 IPC90N04S5-3R6 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 63W; PG-TDSON-8
Drain-source voltage: 40V
Drain current: 90A
On-state resistance: 3.6mΩ
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 63W
Polarisation: unipolar
Gate charge: 32.6nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TDSON-8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPC90N04S5L-3R3 IPC90N04S5L-3R3 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 62W; PG-TDSON-8
Drain-source voltage: 40V
Drain current: 90A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 62W
Polarisation: unipolar
Gate charge: 40nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±16V
Case: PG-TDSON-8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPD025N06NATMA1 IPD025N06NATMA1 INFINEON TECHNOLOGIES IPD025N06N-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1800 Stücke:
Lieferzeit 7-14 Tag (e)
24+3.05 EUR
29+ 2.5 EUR
31+ 2.33 EUR
33+ 2.2 EUR
50+ 2.12 EUR
Mindestbestellmenge: 24
IPD031N03LGATMA1 IPD031N03LGATMA1 INFINEON TECHNOLOGIES IPD031N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 94W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 3.1mΩ
Drain current: 79A
Drain-source voltage: 30V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2134 Stücke:
Lieferzeit 7-14 Tag (e)
56+1.29 EUR
61+ 1.17 EUR
81+ 0.89 EUR
86+ 0.84 EUR
Mindestbestellmenge: 56
IPD031N06L3GATMA1 IPD031N06L3GATMA1 INFINEON TECHNOLOGIES IPD031N06L3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 167W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 3.1mΩ
Drain current: 100A
Drain-source voltage: 60V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1152 Stücke:
Lieferzeit 7-14 Tag (e)
22+3.33 EUR
28+ 2.62 EUR
38+ 1.89 EUR
40+ 1.79 EUR
500+ 1.77 EUR
1000+ 1.72 EUR
Mindestbestellmenge: 22
IPD034N06N3GATMA1 IPD034N06N3GATMA1 INFINEON TECHNOLOGIES IPD034N06N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 167W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1224 Stücke:
Lieferzeit 7-14 Tag (e)
34+2.13 EUR
40+ 1.79 EUR
51+ 1.42 EUR
54+ 1.33 EUR
500+ 1.29 EUR
Mindestbestellmenge: 34
IPD038N06N3GATMA1 IPD038N06N3GATMA1 INFINEON TECHNOLOGIES IPD038N06N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPD040N03LGATMA1 IPD040N03LGATMA1 INFINEON TECHNOLOGIES IPD040N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 94W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2294 Stücke:
Lieferzeit 7-14 Tag (e)
81+0.89 EUR
106+ 0.68 EUR
120+ 0.6 EUR
138+ 0.52 EUR
146+ 0.49 EUR
500+ 0.48 EUR
Mindestbestellmenge: 81
IPD042P03L3GATMA1 INFINEON TECHNOLOGIES Infineon-IPD042P03L3_G-DS-v02_02-en.pdf?fileId=db3a30431d8a6b3c011d90c8c6e60425 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -70A; Idm: -280A; 150W
Case: PG-TO252-3
Mounting: SMD
Power dissipation: 150W
Polarisation: unipolar
Technology: OptiMOS™ P3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -280A
Drain-source voltage: -30V
Drain current: -70A
On-state resistance: 6.8mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
IPD050N03LGATMA1 IPD050N03LGATMA1 INFINEON TECHNOLOGIES IPD050N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2342 Stücke:
Lieferzeit 7-14 Tag (e)
67+1.07 EUR
88+ 0.82 EUR
100+ 0.72 EUR
115+ 0.62 EUR
121+ 0.59 EUR
500+ 0.58 EUR
Mindestbestellmenge: 67
IPD053N06NATMA1 IPD053N06NATMA1 INFINEON TECHNOLOGIES IPD053N06N-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 83W; PG-TO252-3
Power dissipation: 83W
Case: PG-TO252-3
Mounting: SMD
Drain-source voltage: 60V
Drain current: 45A
On-state resistance: 5.3mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
IPD060N03LGATMA1 IPD060N03LGATMA1 INFINEON TECHNOLOGIES IPD060N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 56W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 43A
Power dissipation: 56W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 88 Stücke:
Lieferzeit 7-14 Tag (e)
62+1.16 EUR
84+ 0.86 EUR
88+ 0.82 EUR
500+ 0.55 EUR
Mindestbestellmenge: 62
IPD068P03L3GATMA1 IPD068P03L3GATMA1 INFINEON TECHNOLOGIES IPD068P03L3GATMA1.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -70A; 100W; PG-TO252-3
Polarisation: unipolar
Technology: OptiMOS™ P3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO252-3
Drain-source voltage: -30V
Drain current: -70A
On-state resistance: 11mΩ
Type of transistor: P-MOSFET
Power dissipation: 100W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPD075N03LGATMA1 IPD075N03LGATMA1 INFINEON TECHNOLOGIES IPD075N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 47W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 47W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPD082N10N3GATMA1 IPD082N10N3GATMA1 INFINEON TECHNOLOGIES IPD082N10N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO252-3
Power dissipation: 125W
Case: PG-TO252-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 80A
On-state resistance: 8.2mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPD090N03LGATMA1 IPD090N03LGATMA1 INFINEON TECHNOLOGIES IPD090N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 42W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2379 Stücke:
Lieferzeit 7-14 Tag (e)
77+0.93 EUR
146+ 0.49 EUR
154+ 0.46 EUR
500+ 0.45 EUR
Mindestbestellmenge: 77
IPD110N12N3GATMA1 INFINEON TECHNOLOGIES dgdl?fileId=db3a30432239cccd0122a7a49e2b7d1d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 54A; Idm: 300A; 136W
Mounting: SMD
Drain-source voltage: 120V
Drain current: 54A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 300A
Case: PG-TO252-3
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
IPD12CN10NGATMA1 IPD12CN10NGATMA1 INFINEON TECHNOLOGIES IPD12CN10NG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 67A; 125W; PG-TO252-3
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
On-state resistance: 12.4mΩ
Drain-source voltage: 100V
Drain current: 67A
Case: PG-TO252-3
Power dissipation: 125W
Mounting: SMD
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2143 Stücke:
Lieferzeit 7-14 Tag (e)
38+1.9 EUR
44+ 1.63 EUR
57+ 1.27 EUR
60+ 1.2 EUR
500+ 1.17 EUR
Mindestbestellmenge: 38
IPD135N03LGATMA1 IPD135N03LGATMA1 INFINEON TECHNOLOGIES IPD135N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 31W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 31W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 13.5mΩ
Drain current: 21A
Drain-source voltage: 30V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 879 Stücke:
Lieferzeit 7-14 Tag (e)
59+1.22 EUR
121+ 0.59 EUR
137+ 0.52 EUR
159+ 0.45 EUR
168+ 0.43 EUR
500+ 0.42 EUR
Mindestbestellmenge: 59
IPB60R190C6ATMA1 IPW60R190C6_2_1.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a304320d39d590121f895e912201a
IPB60R190C6ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO263-3
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 600V
Drain current: 20.2A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 151W
Polarisation: unipolar
Technology: CoolMOS™ C6
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
IPB60R199CPATMA1 IPB60R199CP-DTE.pdf
IPB60R199CPATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO263-3
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 600V
Drain current: 16A
On-state resistance: 0.199Ω
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Technology: CoolMOS™ CP
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB60R250CPATMA1 IPB60R250CP-DTE.pdf
IPB60R250CPATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO263-3-2
Mounting: SMD
Case: PG-TO263-3-2
Power dissipation: 104W
Polarisation: unipolar
Technology: CoolMOS™ CP
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 600V
Drain current: 12A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
IPB60R280C6ATMA1 IPB60R280C6-DTE.pdf
IPB60R280C6ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO263-3
Technology: CoolMOS™ C6
Mounting: SMD
Power dissipation: 104W
Case: PG-TO263-3
Polarisation: unipolar
Drain current: 13.8A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB60R280P7ATMA1 IPB60R280P7.pdf
IPB60R280P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; D2PAK
Technology: CoolMOS™ P7
Mounting: SMD
Power dissipation: 53W
Case: D2PAK
Kind of package: reel
Polarisation: unipolar
Drain current: 8A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Gate charge: 18nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB60R299CPATMA1 IPB60R299CP-DTE.pdf
IPB60R299CPATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 96W; PG-TO263-3
Mounting: SMD
Case: PG-TO263-3
Power dissipation: 96W
Technology: CoolMOS™ CP
Drain current: 11A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
On-state resistance: 0.299Ω
Gate-source voltage: ±20V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB60R360P7ATMA1 IPB60R360P7.pdf
IPB60R360P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 41W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB60R385CPATMA1 IPB60R385CP-DTE.pdf
IPB60R385CPATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB64N25S320ATMA1 Infineon-IPB64N25S3-20-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937af6620149&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 250V; 46A; Idm: 256A
Mounting: SMD
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS® -T
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 256A
Case: PG-TO263-3-2
Drain-source voltage: 250V
Drain current: 46A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
IPB65R045C7ATMA1 IPB65R045C7-DTE.pdf
IPB65R045C7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO263-3
Technology: CoolMOS™
Case: PG-TO263-3
Mounting: SMD
On-state resistance: 45mΩ
Power dissipation: 227W
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Polarisation: unipolar
Drain current: 46A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB65R065C7ATMA1 IPB65R065C7-DTE.pdf
IPB65R065C7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Power dissipation: 171W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB65R099C6ATMA1 IPB65R099C6-DTE.pdf
IPB65R099C6ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB65R110CFDATMA1 IPB65R110CFD-DTE.pdf
IPB65R110CFDATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB65R125C7ATMA1 IPB65R125C7-DTE.pdf
IPB65R125C7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 101W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 101W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB65R150CFDATMA1 IPB65R150CFD-DTE.pdf
IPB65R150CFDATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22.4A; 195.3W; PG-TO263-3
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 650V
Drain current: 22.4A
On-state resistance: 0.15Ω
Type of transistor: N-MOSFET
Power dissipation: 195.3W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB65R190C7ATMA1 IPB65R190C7-DTE.pdf
IPB65R190C7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; 72W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 72W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB65R190CFDATMA1 IPB65R190CFD-DTE.pdf
IPB65R190CFDATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB65R225C7ATMA1 IPB65R225C7-DTE.pdf
IPB65R225C7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO263-3
Technology: CoolMOS™
Case: PG-TO263-3
Mounting: SMD
On-state resistance: 0.225Ω
Power dissipation: 63W
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Polarisation: unipolar
Drain current: 11A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB65R280E6ATMA1 IPB65R280E6-DTE.pdf
IPB65R280E6ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB65R310CFDATMA1 IPB65R310CFD-DTE.pdf
IPB65R310CFDATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO263-3
Drain-source voltage: 650V
Drain current: 11.4A
On-state resistance: 0.31Ω
Type of transistor: N-MOSFET
Power dissipation: 104.2W
Polarisation: unipolar
Case: PG-TO263-3
Mounting: SMD
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB65R380C6ATMA1 IPB65R380C6-DTE.pdf
IPB65R380C6ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB65R420CFDATMA1 IPB65R420CFD-DTE.pdf
IPB65R420CFDATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 310W; PG-TO263-3
Technology: CoolMOS™
Case: PG-TO263-3
Mounting: SMD
On-state resistance: 0.42Ω
Power dissipation: 310W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 8.7A
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB65R660CFDATMA1 IPB65R660CFD-DTE.pdf
IPB65R660CFDATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO263-3
Technology: CoolMOS™
Case: PG-TO263-3
Mounting: SMD
On-state resistance: 0.66Ω
Power dissipation: 62.5W
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Polarisation: unipolar
Drain current: 6A
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
IPB80N04S2H4ATMA2 IPB80N04S2H4.pdf
IPB80N04S2H4ATMA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 103nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB80N06S2L07ATMA3 IPB80N06S2L07.pdf
IPB80N06S2L07ATMA3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 210W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 210W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 986 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
24+3.05 EUR
36+ 2 EUR
38+ 1.89 EUR
1000+ 1.82 EUR
Mindestbestellmenge: 24
IPB80N06S405ATMA2 Infineon-I80N06S4_05-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038d4d5340cec
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 320A; 107W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Pulsed drain current: 320A
Power dissipation: 107W
Case: PG-TO263-3-2
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
IPB80N08S2L07ATMA1 IPB80N08S2L07.pdf
IPB80N08S2L07ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 183nC
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
IPB80P04P4L04ATMA1 Infineon-IPP_B_I80P04P4L_04-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f783241fb2e2a
IPB80P04P4L04ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -80A; 125W; PG-TO263-3
Case: PG-TO263-3
Drain-source voltage: -40V
Drain current: -80A
On-state resistance: 4.4mΩ
Type of transistor: P-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 135nC
Technology: OptiMOS™ P2
Kind of channel: enhanced
Gate-source voltage: ±16V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB90R340C3ATMA1 IPB90R340C3ATMA1-DTE.pdf
IPB90R340C3ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 208W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 9.5A
Power dissipation: 208W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPC100N04S5-1R2 IPC100N04S51R2.pdf
IPC100N04S5-1R2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 150W
Drain current: 100A
On-state resistance: 1.2mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 131nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
IPC100N04S5-1R7 IPC100N04S51R7.pdf
IPC100N04S5-1R7
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 115W
Drain current: 100A
On-state resistance: 1.7mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 83nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
IPC100N04S5-1R9 IPC100N04S51R9.pdf
IPC100N04S5-1R9
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 100W
Drain current: 100A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 65nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPC100N04S5-2R8 IPC100N04S52R8.pdf
IPC100N04S5-2R8
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 75W
Drain current: 100A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 45nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPC100N04S5L-1R1 IPC100N04S5L1R1.pdf
IPC100N04S5L-1R1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 150W
Drain current: 100A
On-state resistance: 1.1mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.14µC
Kind of channel: enhanced
Gate-source voltage: ±16V
Drain-source voltage: 40V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPC100N04S5L-1R5 IPC100N04S5L1R5.pdf
IPC100N04S5L-1R5
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 115W
Drain current: 100A
On-state resistance: 1.5mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 95nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Drain-source voltage: 40V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPC100N04S5L-1R9 IPC100N04S5L1R9.pdf
IPC100N04S5L-1R9
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 100W
Drain current: 100A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 81nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Drain-source voltage: 40V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPC100N04S5L-2R6 IPC100N04S5L2R6.pdf
IPC100N04S5L-2R6
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 75W
Drain current: 100A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 55nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Drain-source voltage: 40V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPC50N04S5-5R8 IPC50N04S55R8.pdf
IPC50N04S5-5R8
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 42W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPC50N04S5L-5R5 IPC50N04S5L5R5.pdf
IPC50N04S5L-5R5
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 42W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPC70N04S5-4R6
IPC70N04S5-4R6
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 24.2nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPC70N04S5L-4R2
IPC70N04S5L-4R2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPC90N04S5-3R6
IPC90N04S5-3R6
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 63W; PG-TDSON-8
Drain-source voltage: 40V
Drain current: 90A
On-state resistance: 3.6mΩ
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 63W
Polarisation: unipolar
Gate charge: 32.6nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TDSON-8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPC90N04S5L-3R3
IPC90N04S5L-3R3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 62W; PG-TDSON-8
Drain-source voltage: 40V
Drain current: 90A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 62W
Polarisation: unipolar
Gate charge: 40nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±16V
Case: PG-TDSON-8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPD025N06NATMA1 IPD025N06N-DTE.pdf
IPD025N06NATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1800 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
24+3.05 EUR
29+ 2.5 EUR
31+ 2.33 EUR
33+ 2.2 EUR
50+ 2.12 EUR
Mindestbestellmenge: 24
IPD031N03LGATMA1 IPD031N03LG-DTE.pdf
IPD031N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 94W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 3.1mΩ
Drain current: 79A
Drain-source voltage: 30V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2134 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
56+1.29 EUR
61+ 1.17 EUR
81+ 0.89 EUR
86+ 0.84 EUR
Mindestbestellmenge: 56
IPD031N06L3GATMA1 IPD031N06L3G-DTE.pdf
IPD031N06L3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 167W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 3.1mΩ
Drain current: 100A
Drain-source voltage: 60V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1152 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
22+3.33 EUR
28+ 2.62 EUR
38+ 1.89 EUR
40+ 1.79 EUR
500+ 1.77 EUR
1000+ 1.72 EUR
Mindestbestellmenge: 22
IPD034N06N3GATMA1 IPD034N06N3G-DTE.pdf
IPD034N06N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 167W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1224 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
34+2.13 EUR
40+ 1.79 EUR
51+ 1.42 EUR
54+ 1.33 EUR
500+ 1.29 EUR
Mindestbestellmenge: 34
IPD038N06N3GATMA1 IPD038N06N3G-DTE.pdf
IPD038N06N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPD040N03LGATMA1 IPD040N03LG-DTE.pdf
IPD040N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 94W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2294 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
81+0.89 EUR
106+ 0.68 EUR
120+ 0.6 EUR
138+ 0.52 EUR
146+ 0.49 EUR
500+ 0.48 EUR
Mindestbestellmenge: 81
IPD042P03L3GATMA1 Infineon-IPD042P03L3_G-DS-v02_02-en.pdf?fileId=db3a30431d8a6b3c011d90c8c6e60425
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -70A; Idm: -280A; 150W
Case: PG-TO252-3
Mounting: SMD
Power dissipation: 150W
Polarisation: unipolar
Technology: OptiMOS™ P3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -280A
Drain-source voltage: -30V
Drain current: -70A
On-state resistance: 6.8mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
IPD050N03LGATMA1 IPD050N03LG-DTE.pdf
IPD050N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2342 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
67+1.07 EUR
88+ 0.82 EUR
100+ 0.72 EUR
115+ 0.62 EUR
121+ 0.59 EUR
500+ 0.58 EUR
Mindestbestellmenge: 67
IPD053N06NATMA1 IPD053N06N-DTE.pdf
IPD053N06NATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 83W; PG-TO252-3
Power dissipation: 83W
Case: PG-TO252-3
Mounting: SMD
Drain-source voltage: 60V
Drain current: 45A
On-state resistance: 5.3mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
IPD060N03LGATMA1 IPD060N03LG-DTE.pdf
IPD060N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 56W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 43A
Power dissipation: 56W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 88 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
62+1.16 EUR
84+ 0.86 EUR
88+ 0.82 EUR
500+ 0.55 EUR
Mindestbestellmenge: 62
IPD068P03L3GATMA1 IPD068P03L3GATMA1.pdf
IPD068P03L3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -70A; 100W; PG-TO252-3
Polarisation: unipolar
Technology: OptiMOS™ P3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO252-3
Drain-source voltage: -30V
Drain current: -70A
On-state resistance: 11mΩ
Type of transistor: P-MOSFET
Power dissipation: 100W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPD075N03LGATMA1 IPD075N03LG-DTE.pdf
IPD075N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 47W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 47W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPD082N10N3GATMA1 IPD082N10N3G-DTE.pdf
IPD082N10N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO252-3
Power dissipation: 125W
Case: PG-TO252-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 80A
On-state resistance: 8.2mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPD090N03LGATMA1 IPD090N03LG-DTE.pdf
IPD090N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 42W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2379 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
77+0.93 EUR
146+ 0.49 EUR
154+ 0.46 EUR
500+ 0.45 EUR
Mindestbestellmenge: 77
IPD110N12N3GATMA1 dgdl?fileId=db3a30432239cccd0122a7a49e2b7d1d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 54A; Idm: 300A; 136W
Mounting: SMD
Drain-source voltage: 120V
Drain current: 54A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 300A
Case: PG-TO252-3
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
IPD12CN10NGATMA1 IPD12CN10NG-DTE.pdf
IPD12CN10NGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 67A; 125W; PG-TO252-3
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
On-state resistance: 12.4mΩ
Drain-source voltage: 100V
Drain current: 67A
Case: PG-TO252-3
Power dissipation: 125W
Mounting: SMD
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2143 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
38+1.9 EUR
44+ 1.63 EUR
57+ 1.27 EUR
60+ 1.2 EUR
500+ 1.17 EUR
Mindestbestellmenge: 38
IPD135N03LGATMA1 IPD135N03LG-DTE.pdf
IPD135N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 31W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 31W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 13.5mΩ
Drain current: 21A
Drain-source voltage: 30V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 879 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
59+1.22 EUR
121+ 0.59 EUR
137+ 0.52 EUR
159+ 0.45 EUR
168+ 0.43 EUR
500+ 0.42 EUR
Mindestbestellmenge: 59
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