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IPB60R280C6ATMA1 INFINEON TECHNOLOGIES
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Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO263-3
Technology: CoolMOS™ C6
Mounting: SMD
Power dissipation: 104W
Case: PG-TO263-3
Polarisation: unipolar
Drain current: 13.8A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Anzahl je Verpackung: 1 Stücke
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Technische Details IPB60R280C6ATMA1 INFINEON TECHNOLOGIES
Description: MOSFET N-CH 600V 13.8A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 430µA, Supplier Device Package: PG-TO263-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V.
Weitere Produktangebote IPB60R280C6ATMA1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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IPB60R280C6ATMA1 | Hersteller : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 430µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V |
Produkt ist nicht verfügbar |
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IPB60R280C6ATMA1 | Hersteller : Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 430µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V |
Produkt ist nicht verfügbar |
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IPB60R280C6ATMA1 | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |
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IPB60R280C6ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO263-3 Technology: CoolMOS™ C6 Mounting: SMD Power dissipation: 104W Case: PG-TO263-3 Polarisation: unipolar Drain current: 13.8A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 0.28Ω |
Produkt ist nicht verfügbar |