IPB65R150CFDATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 650V 22.4A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 195.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 4.11 EUR |
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Technische Details IPB65R150CFDATMA1 Infineon Technologies
Description: MOSFET N-CH 650V 22.4A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V, Power Dissipation (Max): 195.3W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 900µA, Supplier Device Package: PG-TO263-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V.
Weitere Produktangebote IPB65R150CFDATMA1 nach Preis ab 4.8 EUR bis 7.94 EUR
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IPB65R150CFDATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 650V 22.4A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V Power Dissipation (Max): 195.3W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 900µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB65R150CFDATMA1 | Hersteller : Infineon Technologies |
MOSFET N-Ch 700V 72A D2PAK-2 |
auf Bestellung 999 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB65R150CFDATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 22.4A; 195.3W; PG-TO263-3 Mounting: SMD Case: PG-TO263-3 Drain-source voltage: 650V Drain current: 22.4A On-state resistance: 0.15Ω Type of transistor: N-MOSFET Power dissipation: 195.3W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPB65R150CFDATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 22.4A; 195.3W; PG-TO263-3 Mounting: SMD Case: PG-TO263-3 Drain-source voltage: 650V Drain current: 22.4A On-state resistance: 0.15Ω Type of transistor: N-MOSFET Power dissipation: 195.3W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhanced Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |