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IPC100N04S5-2R8

IPC100N04S5-2R8 INFINEON TECHNOLOGIES


IPC100N04S52R8.pdf Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 75W
Drain current: 100A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 45nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Anzahl je Verpackung: 1 Stücke
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Technische Details IPC100N04S5-2R8 INFINEON TECHNOLOGIES

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8, Technology: OptiMOS™ 5, Mounting: SMD, Case: PG-TDSON-8, Power dissipation: 75W, Drain current: 100A, On-state resistance: 2.8mΩ, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 45nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Drain-source voltage: 40V, Anzahl je Verpackung: 1 Stücke.

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IPC100N04S5-2R8 IPC100N04S5-2R8 Hersteller : INFINEON TECHNOLOGIES IPC100N04S52R8.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 75W
Drain current: 100A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 45nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Produkt ist nicht verfügbar