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IPB80N06S405ATMA2

IPB80N06S405ATMA2 Infineon Technologies

Infineon_I80N06S4_05_DS_v01_00_en-1226657.pdf Hersteller: Infineon Technologies
MOSFETs N-Ch 60V 80A D2PAK-2
auf Bestellung 915 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.34 EUR
10+ 2.78 EUR
100+ 2.22 EUR
250+ 2.16 EUR
500+ 1.87 EUR
1000+ 1.46 EUR
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Technische Details IPB80N06S405ATMA2 Infineon Technologies

Description: MOSFET N-CH 60V 80A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V, Power Dissipation (Max): 107W (Tc), Vgs(th) (Max) @ Id: 4V @ 60µA, Supplier Device Package: PG-TO263-3-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote IPB80N06S405ATMA2 nach Preis ab 1.62 EUR bis 4.52 EUR

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Preis ohne MwSt
IPB80N06S405ATMA2 IPB80N06S405ATMA2 Hersteller : Infineon Technologies Infineon-I80N06S4_05-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038d4d5340cec Description: MOSFET N-CH 60V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 60µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 631 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.52 EUR
10+ 2.92 EUR
100+ 2.01 EUR
500+ 1.62 EUR
Mindestbestellmenge: 4
IPB80N06S405ATMA2 IPB80N06S405ATMA2 Hersteller : Infineon Technologies ipp_b_i80n06s4-05_ds_10.pdf Trans MOSFET N-CH 60V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IPB80N06S405ATMA2 Hersteller : INFINEON TECHNOLOGIES Infineon-I80N06S4_05-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038d4d5340cec IPB80N06S405ATMA2 SMD N channel transistors
Produkt ist nicht verfügbar
IPB80N06S405ATMA2 IPB80N06S405ATMA2 Hersteller : Infineon Technologies Infineon-I80N06S4_05-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038d4d5340cec Description: MOSFET N-CH 60V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 60µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar