IPC100N04S5-1R7 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 115W
Drain current: 100A
On-state resistance: 1.7mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 83nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Anzahl je Verpackung: 5000 Stücke
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Technische Details IPC100N04S5-1R7 INFINEON TECHNOLOGIES
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8, Technology: OptiMOS™ 5, Mounting: SMD, Case: PG-TDSON-8, Power dissipation: 115W, Drain current: 100A, On-state resistance: 1.7mΩ, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 83nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Drain-source voltage: 40V, Anzahl je Verpackung: 5000 Stücke.
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IPC100N04S5-1R7 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8 Technology: OptiMOS™ 5 Mounting: SMD Case: PG-TDSON-8 Power dissipation: 115W Drain current: 100A On-state resistance: 1.7mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 83nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 40V |
Produkt ist nicht verfügbar |