IPB80P04P4L04ATMA1 Infineon Technologies
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Technische Details IPB80P04P4L04ATMA1 Infineon Technologies
Description: MOSFET P-CH 40V 80A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PG-TO263-3-2, Grade: Automotive, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote IPB80P04P4L04ATMA1
Foto | Bezeichnung | Hersteller | Beschreibung |
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IPB80P04P4L04ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -80A; 125W; PG-TO263-3 Case: PG-TO263-3 Drain-source voltage: -40V Drain current: -80A On-state resistance: 4.4mΩ Type of transistor: P-MOSFET Power dissipation: 125W Polarisation: unipolar Gate charge: 135nC Technology: OptiMOS™ P2 Kind of channel: enhanced Gate-source voltage: ±16V Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPB80P04P4L04ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 40V 80A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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IPB80P04P4L04ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -80A; 125W; PG-TO263-3 Case: PG-TO263-3 Drain-source voltage: -40V Drain current: -80A On-state resistance: 4.4mΩ Type of transistor: P-MOSFET Power dissipation: 125W Polarisation: unipolar Gate charge: 135nC Technology: OptiMOS™ P2 Kind of channel: enhanced Gate-source voltage: ±16V Mounting: SMD |
Produkt ist nicht verfügbar |