IPZ65R045C7XKSA1 Infineon Technologies
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Description: MOSFET N-CH 650V 46A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Supplier Device Package: PG-TO247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
auf Bestellung 225 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 17.88 EUR |
30+ | 14.47 EUR |
120+ | 13.62 EUR |
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Technische Details IPZ65R045C7XKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 46A TO247, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V, Power Dissipation (Max): 227W (Tc), Vgs(th) (Max) @ Id: 4V @ 1.25mA, Supplier Device Package: PG-TO247, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V.
Weitere Produktangebote IPZ65R045C7XKSA1 nach Preis ab 11.95 EUR bis 18.08 EUR
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IPZ65R045C7XKSA1 | Hersteller : Infineon Technologies |
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auf Bestellung 1142 Stücke: Lieferzeit 10-14 Tag (e) |
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IPZ65R045C7XKSA1 | Hersteller : Infineon Technologies |
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auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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IPZ65R045C7XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO247-4 Case: PG-TO247-4 Mounting: THT Kind of package: tube Features of semiconductor devices: Kelvin terminal Technology: CoolMOS™ C7 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 650V Drain current: 46A On-state resistance: 45mΩ Type of transistor: N-MOSFET Power dissipation: 227W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPZ65R045C7XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO247-4 Case: PG-TO247-4 Mounting: THT Kind of package: tube Features of semiconductor devices: Kelvin terminal Technology: CoolMOS™ C7 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 650V Drain current: 46A On-state resistance: 45mΩ Type of transistor: N-MOSFET Power dissipation: 227W Polarisation: unipolar |
Produkt ist nicht verfügbar |