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IRF7904TRPBF IRF7904TRPBF INFINEON TECHNOLOGIES irf7904pbf.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 7.6A; 1.4W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.6A
Power dissipation: 1.4W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF7907TRPBF IRF7907TRPBF INFINEON TECHNOLOGIES irf7907pbf.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 9.1A; 2W; SO8
Mounting: SMD
Drain-source voltage: 30V
Drain current: 9.1A
Type of transistor: N-MOSFET x2
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Case: SO8
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF7910TRPBF IRF7910TRPBF INFINEON TECHNOLOGIES IRF7910TRPBF.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 10A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 10A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF7946TRPBF IRF7946TRPBF INFINEON TECHNOLOGIES IRF7946TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 198A; 96W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 198A
Power dissipation: 96W
Case: DirectFET
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 4800 Stücke
Produkt ist nicht verfügbar
IRF8010PBF IRF8010PBF INFINEON TECHNOLOGIES irf8010.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; TO220AB
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 260W
Polarisation: unipolar
Gate charge: 81nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
Drain-source voltage: 100V
Drain current: 80A
On-state resistance: 15mΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 345 Stücke:
Lieferzeit 7-14 Tag (e)
38+1.89 EUR
56+ 1.29 EUR
72+ 1 EUR
76+ 0.94 EUR
Mindestbestellmenge: 38
IRF8010STRLPBF IRF8010STRLPBF INFINEON TECHNOLOGIES irf8010spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 260W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF8113TRPBF IRF8113TRPBF INFINEON TECHNOLOGIES irf8113pbf.pdf?fileId=5546d462533600a40153560ceb611d50 description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13.8A; Idm: 135A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.8A
Pulsed drain current: 135A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF8301MTRPBF IRF8301MTRPBF INFINEON TECHNOLOGIES IRF8301MTRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 192A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 192A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 4800 Stücke
Produkt ist nicht verfügbar
IRF8313TRPBF IRF8313TRPBF INFINEON TECHNOLOGIES irf8313pbf.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 9.7A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.7A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF8707TRPBF IRF8707TRPBF INFINEON TECHNOLOGIES irf8707pbf.pdf?fileId=5546d462533600a40153560d57f81d6b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.1A; Idm: 88A; 1.6W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.1A
Pulsed drain current: 88A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF8714TRPBF IRF8714TRPBF INFINEON TECHNOLOGIES irf8714pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF8721TRPBF IRF8721TRPBF INFINEON TECHNOLOGIES irf8721pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF8734TRPBF IRF8734TRPBF INFINEON TECHNOLOGIES irf8734pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF8736TRPBF IRF8736TRPBF INFINEON TECHNOLOGIES irf8736pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF8788TRPBF IRF8788TRPBF INFINEON TECHNOLOGIES irf8788pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF8910TRPBF IRF8910TRPBF INFINEON TECHNOLOGIES irf8910pbf.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 10A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF8915TRPBF IRF8915TRPBF INFINEON TECHNOLOGIES irf8915pbf.pdf?fileId=5546d462533600a401535610fd2d1d91 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7.1A; Idm: 71A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.1A
Pulsed drain current: 71A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 18.3mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF9310TRPBF IRF9310TRPBF INFINEON TECHNOLOGIES irf9310pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF9317TRPBF IRF9317TRPBF INFINEON TECHNOLOGIES irf9317pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -16A; 2.5W; SO8
Case: SO8
Mounting: SMD
Power dissipation: 2.5W
Polarisation: unipolar
Drain current: -16A
Drain-source voltage: -30V
Technology: HEXFET®
Kind of channel: enhanced
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF9321TRPBF IRF9321TRPBF INFINEON TECHNOLOGIES irf9321pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF9328TRPBF IRF9328TRPBF INFINEON TECHNOLOGIES irf9328pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF9332TRPBF IRF9332TRPBF INFINEON TECHNOLOGIES irf9332pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9.8A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF9335TRPBF IRF9335TRPBF INFINEON TECHNOLOGIES irf9335pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.4A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.4A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF9358TRPBF IRF9358TRPBF INFINEON TECHNOLOGIES irf9358pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9.2A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9.2A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF9362TRPBF IRF9362TRPBF INFINEON TECHNOLOGIES irf9362pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF9389TRPBF IRF9389TRPBF INFINEON TECHNOLOGIES IRF9389TRPBF.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.8/-4.6A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.8/-4.6A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27/64mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1029 Stücke:
Lieferzeit 7-14 Tag (e)
100+0.72 EUR
127+ 0.56 EUR
208+ 0.34 EUR
220+ 0.33 EUR
250+ 0.31 EUR
Mindestbestellmenge: 100
IRF9393TRPBF IRF9393TRPBF INFINEON TECHNOLOGIES irf9393pbf.pdf?fileId=5546d462533600a401535611877d1db3 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.3A; 1.6W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.3A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 19.4mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3844 Stücke:
Lieferzeit 7-14 Tag (e)
120+0.6 EUR
132+ 0.54 EUR
173+ 0.41 EUR
183+ 0.39 EUR
Mindestbestellmenge: 120
IRF9410TRPBF IRF9410TRPBF INFINEON TECHNOLOGIES irf9410pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF9530NPBF IRF9530NPBF INFINEON TECHNOLOGIES irf9530n.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -14A; 79W; TO220AB
Kind of package: tube
Drain-source voltage: -100V
Drain current: -14A
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Power dissipation: 79W
Polarisation: unipolar
Gate charge: 38.7nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1242 Stücke:
Lieferzeit 7-14 Tag (e)
81+0.89 EUR
105+ 0.69 EUR
127+ 0.57 EUR
134+ 0.54 EUR
500+ 0.52 EUR
1000+ 0.51 EUR
Mindestbestellmenge: 81
IRF9530NSTRLPBF IRF9530NSTRLPBF INFINEON TECHNOLOGIES irf9530nspbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -14A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -14A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF9530NSTRRPBF IRF9530NSTRRPBF INFINEON TECHNOLOGIES irf9530nspbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -14A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -14A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF9540NLPBF IRF9540NLPBF INFINEON TECHNOLOGIES irf9540nspbf.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 140W; TO262
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 140W
Case: TO262
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 282 Stücke:
Lieferzeit 7-14 Tag (e)
24+3 EUR
42+ 1.72 EUR
45+ 1.62 EUR
1000+ 1.56 EUR
Mindestbestellmenge: 24
IRF9540NPBF IRF9540NPBF INFINEON TECHNOLOGIES irf9540n.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 140W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: THT
Gate charge: 64.7nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1122 Stücke:
Lieferzeit 7-14 Tag (e)
47+1.54 EUR
58+ 1.24 EUR
88+ 0.82 EUR
93+ 0.78 EUR
1000+ 0.74 EUR
Mindestbestellmenge: 47
IRF9540NSTRLPBF IRF9540NSTRLPBF INFINEON TECHNOLOGIES irf9540nspbf.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF9910TRPBF IRF9910TRPBF INFINEON TECHNOLOGIES irf9910pbf.pdf description Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 10A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF9952TRPBF IRF9952TRPBF INFINEON TECHNOLOGIES irf9952pbf.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 3.5/-2.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 3.5/-2.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±30V
On-state resistance: 0.1/0.25Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF9956TRPBF IRF9956TRPBF INFINEON TECHNOLOGIES irf9956pbf.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 3.5A; 2W; SO8
Mounting: SMD
Case: SO8
Drain-source voltage: 30V
Drain current: 3.5A
Type of transistor: N-MOSFET x2
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF9Z24NPBF IRF9Z24NPBF INFINEON TECHNOLOGIES irf9z24n.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -12A; 45W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -12A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: THT
Gate charge: 12.7nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1068 Stücke:
Lieferzeit 7-14 Tag (e)
91+0.79 EUR
101+ 0.71 EUR
176+ 0.41 EUR
186+ 0.39 EUR
1000+ 0.38 EUR
2000+ 0.37 EUR
Mindestbestellmenge: 91
IRF9Z24NSTRLPBF INFINEON TECHNOLOGIES Infineon-IRF9Z24NS-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee376ad063e Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -8.5A; Idm: -48A; 45W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -8.5A
Pulsed drain current: -48A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF9Z34NPBF IRF9Z34NPBF INFINEON TECHNOLOGIES irf9z34n.pdf description Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -19A; 68W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -19A
Power dissipation: 68W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 23.3nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 322 Stücke:
Lieferzeit 7-14 Tag (e)
91+0.79 EUR
115+ 0.62 EUR
158+ 0.45 EUR
167+ 0.43 EUR
500+ 0.42 EUR
1000+ 0.41 EUR
Mindestbestellmenge: 91
IRFB260NPBF IRFB260NPBF INFINEON TECHNOLOGIES irfb260n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 56A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 56A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 37 Stücke:
Lieferzeit 7-14 Tag (e)
23+3.12 EUR
37+ 1.93 EUR
1000+ 1.76 EUR
Mindestbestellmenge: 23
IRFB3004PBF IRFB3004PBF INFINEON TECHNOLOGIES irfs3004pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.75mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFB3006GPBF IRFB3006GPBF INFINEON TECHNOLOGIES irfb3006gpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
IRFB3006PBF IRFB3006PBF INFINEON TECHNOLOGIES irfb3006pbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 71 Stücke:
Lieferzeit 7-14 Tag (e)
15+4.8 EUR
24+ 3.05 EUR
25+ 2.89 EUR
50+ 2.77 EUR
Mindestbestellmenge: 15
IRFB3077PBF IRFB3077PBF INFINEON TECHNOLOGIES irfb3077pbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 210A; 370W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 210A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 204 Stücke:
Lieferzeit 7-14 Tag (e)
30+2.46 EUR
39+ 1.87 EUR
41+ 1.77 EUR
1000+ 1.72 EUR
Mindestbestellmenge: 30
IRFB3206GPBF IRFB3206GPBF INFINEON TECHNOLOGIES irfb3206gpbf.pdf?fileId=5546d462533600a40153561550971df5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
33+2.17 EUR
37+ 1.96 EUR
48+ 1.5 EUR
51+ 1.42 EUR
Mindestbestellmenge: 33
IRFB3206PBF IRFB3206PBF INFINEON TECHNOLOGIES irfs3206pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 123 Stücke:
Lieferzeit 7-14 Tag (e)
40+1.8 EUR
45+ 1.62 EUR
57+ 1.27 EUR
60+ 1.2 EUR
Mindestbestellmenge: 40
IRFB3207PBF IRFB3207PBF INFINEON TECHNOLOGIES irfs3207pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 65 Stücke:
Lieferzeit 7-14 Tag (e)
15+4.85 EUR
17+ 4.36 EUR
22+ 3.35 EUR
23+ 3.16 EUR
Mindestbestellmenge: 15
IRFB3207ZGPBF IRFB3207ZGPBF INFINEON TECHNOLOGIES irfb3207zgpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFB3207ZPBF IRFB3207ZPBF INFINEON TECHNOLOGIES irfs3207zpbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 65 Stücke:
Lieferzeit 7-14 Tag (e)
23+3.13 EUR
30+ 2.39 EUR
32+ 2.25 EUR
100+ 2.22 EUR
500+ 2.16 EUR
Mindestbestellmenge: 23
IRFB3256PBF IRFB3256PBF INFINEON TECHNOLOGIES IRFB3256PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFB3306PBF IRFB3306PBF INFINEON TECHNOLOGIES irfs3306pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 160A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2086 Stücke:
Lieferzeit 7-14 Tag (e)
40+1.79 EUR
50+ 1.43 EUR
73+ 0.99 EUR
77+ 0.93 EUR
2000+ 0.9 EUR
Mindestbestellmenge: 40
IRFB3307PBF IRFB3307PBF INFINEON TECHNOLOGIES irfs3307.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 74 Stücke:
Lieferzeit 7-14 Tag (e)
23+3.12 EUR
26+ 2.82 EUR
34+ 2.14 EUR
36+ 2.03 EUR
Mindestbestellmenge: 23
IRFB3307ZPBF IRFB3307ZPBF INFINEON TECHNOLOGIES irfs3307zpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 128 Stücke:
Lieferzeit 7-14 Tag (e)
27+2.69 EUR
31+ 2.33 EUR
50+ 1.46 EUR
53+ 1.37 EUR
2000+ 1.33 EUR
Mindestbestellmenge: 27
IRFB3607PBF IRFB3607PBF INFINEON TECHNOLOGIES irfs3607pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 513 Stücke:
Lieferzeit 7-14 Tag (e)
64+1.13 EUR
82+ 0.88 EUR
108+ 0.67 EUR
114+ 0.63 EUR
250+ 0.61 EUR
Mindestbestellmenge: 64
IRFB3806PBF IRFB3806PBF INFINEON TECHNOLOGIES irfs3806pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 43A
Power dissipation: 71W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 15.8mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 343 Stücke:
Lieferzeit 7-14 Tag (e)
53+1.36 EUR
75+ 0.96 EUR
88+ 0.82 EUR
107+ 0.67 EUR
113+ 0.63 EUR
Mindestbestellmenge: 53
IRFB38N20DPBF IRFB38N20DPBF INFINEON TECHNOLOGIES irfs38n20d.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 44A; 320W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 44A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 54mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 142 Stücke:
Lieferzeit 7-14 Tag (e)
23+3.19 EUR
32+ 2.29 EUR
50+ 1.44 EUR
53+ 1.36 EUR
Mindestbestellmenge: 23
IRFB4019PBF IRFB4019PBF INFINEON TECHNOLOGIES irfb4019pbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 17A; 80W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 17A
Power dissipation: 80W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 227 Stücke:
Lieferzeit 7-14 Tag (e)
41+1.77 EUR
48+ 1.5 EUR
73+ 0.99 EUR
77+ 0.93 EUR
1000+ 0.9 EUR
Mindestbestellmenge: 41
IRFB4020PBF IRFB4020PBF INFINEON TECHNOLOGIES irfb4020pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 100W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 135 Stücke:
Lieferzeit 7-14 Tag (e)
48+1.52 EUR
59+ 1.23 EUR
65+ 1.1 EUR
69+ 1.04 EUR
500+ 1 EUR
Mindestbestellmenge: 48
IRFB4110GPBF IRFB4110GPBF INFINEON TECHNOLOGIES IRFB4110GPBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 370W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF7904TRPBF irf7904pbf.pdf
IRF7904TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 7.6A; 1.4W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.6A
Power dissipation: 1.4W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF7907TRPBF irf7907pbf.pdf
IRF7907TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 9.1A; 2W; SO8
Mounting: SMD
Drain-source voltage: 30V
Drain current: 9.1A
Type of transistor: N-MOSFET x2
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Case: SO8
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF7910TRPBF IRF7910TRPBF.pdf
IRF7910TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 10A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 10A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF7946TRPBF IRF7946TRPBF.pdf
IRF7946TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 198A; 96W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 198A
Power dissipation: 96W
Case: DirectFET
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 4800 Stücke
Produkt ist nicht verfügbar
IRF8010PBF description irf8010.pdf
IRF8010PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; TO220AB
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 260W
Polarisation: unipolar
Gate charge: 81nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
Drain-source voltage: 100V
Drain current: 80A
On-state resistance: 15mΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 345 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
38+1.89 EUR
56+ 1.29 EUR
72+ 1 EUR
76+ 0.94 EUR
Mindestbestellmenge: 38
IRF8010STRLPBF irf8010spbf.pdf
IRF8010STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 260W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF8113TRPBF description irf8113pbf.pdf?fileId=5546d462533600a40153560ceb611d50
IRF8113TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13.8A; Idm: 135A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.8A
Pulsed drain current: 135A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF8301MTRPBF IRF8301MTRPBF.pdf
IRF8301MTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 192A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 192A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 4800 Stücke
Produkt ist nicht verfügbar
IRF8313TRPBF irf8313pbf.pdf
IRF8313TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 9.7A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.7A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF8707TRPBF irf8707pbf.pdf?fileId=5546d462533600a40153560d57f81d6b
IRF8707TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.1A; Idm: 88A; 1.6W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.1A
Pulsed drain current: 88A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF8714TRPBF irf8714pbf.pdf
IRF8714TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF8721TRPBF irf8721pbf.pdf
IRF8721TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF8734TRPBF irf8734pbf.pdf
IRF8734TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF8736TRPBF irf8736pbf.pdf
IRF8736TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF8788TRPBF irf8788pbf.pdf
IRF8788TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF8910TRPBF irf8910pbf.pdf
IRF8910TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 10A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF8915TRPBF irf8915pbf.pdf?fileId=5546d462533600a401535610fd2d1d91
IRF8915TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7.1A; Idm: 71A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.1A
Pulsed drain current: 71A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 18.3mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF9310TRPBF irf9310pbf.pdf
IRF9310TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF9317TRPBF irf9317pbf.pdf
IRF9317TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -16A; 2.5W; SO8
Case: SO8
Mounting: SMD
Power dissipation: 2.5W
Polarisation: unipolar
Drain current: -16A
Drain-source voltage: -30V
Technology: HEXFET®
Kind of channel: enhanced
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF9321TRPBF irf9321pbf.pdf
IRF9321TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF9328TRPBF irf9328pbf.pdf
IRF9328TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF9332TRPBF irf9332pbf.pdf
IRF9332TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9.8A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF9335TRPBF irf9335pbf.pdf
IRF9335TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.4A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.4A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF9358TRPBF irf9358pbf.pdf
IRF9358TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9.2A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9.2A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF9362TRPBF irf9362pbf.pdf
IRF9362TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF9389TRPBF IRF9389TRPBF.pdf
IRF9389TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.8/-4.6A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.8/-4.6A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27/64mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1029 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
100+0.72 EUR
127+ 0.56 EUR
208+ 0.34 EUR
220+ 0.33 EUR
250+ 0.31 EUR
Mindestbestellmenge: 100
IRF9393TRPBF irf9393pbf.pdf?fileId=5546d462533600a401535611877d1db3
IRF9393TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.3A; 1.6W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.3A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 19.4mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3844 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
120+0.6 EUR
132+ 0.54 EUR
173+ 0.41 EUR
183+ 0.39 EUR
Mindestbestellmenge: 120
IRF9410TRPBF irf9410pbf.pdf
IRF9410TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF9530NPBF irf9530n.pdf
IRF9530NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -14A; 79W; TO220AB
Kind of package: tube
Drain-source voltage: -100V
Drain current: -14A
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Power dissipation: 79W
Polarisation: unipolar
Gate charge: 38.7nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1242 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
81+0.89 EUR
105+ 0.69 EUR
127+ 0.57 EUR
134+ 0.54 EUR
500+ 0.52 EUR
1000+ 0.51 EUR
Mindestbestellmenge: 81
IRF9530NSTRLPBF irf9530nspbf.pdf
IRF9530NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -14A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -14A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF9530NSTRRPBF irf9530nspbf.pdf
IRF9530NSTRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -14A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -14A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF9540NLPBF irf9540nspbf.pdf
IRF9540NLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 140W; TO262
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 140W
Case: TO262
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 282 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
24+3 EUR
42+ 1.72 EUR
45+ 1.62 EUR
1000+ 1.56 EUR
Mindestbestellmenge: 24
IRF9540NPBF irf9540n.pdf
IRF9540NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 140W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: THT
Gate charge: 64.7nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1122 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
47+1.54 EUR
58+ 1.24 EUR
88+ 0.82 EUR
93+ 0.78 EUR
1000+ 0.74 EUR
Mindestbestellmenge: 47
IRF9540NSTRLPBF description irf9540nspbf.pdf
IRF9540NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF9910TRPBF description irf9910pbf.pdf
IRF9910TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 10A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF9952TRPBF irf9952pbf.pdf
IRF9952TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 3.5/-2.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 3.5/-2.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±30V
On-state resistance: 0.1/0.25Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF9956TRPBF irf9956pbf.pdf
IRF9956TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 3.5A; 2W; SO8
Mounting: SMD
Case: SO8
Drain-source voltage: 30V
Drain current: 3.5A
Type of transistor: N-MOSFET x2
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRF9Z24NPBF irf9z24n.pdf
IRF9Z24NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -12A; 45W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -12A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: THT
Gate charge: 12.7nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1068 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
91+0.79 EUR
101+ 0.71 EUR
176+ 0.41 EUR
186+ 0.39 EUR
1000+ 0.38 EUR
2000+ 0.37 EUR
Mindestbestellmenge: 91
IRF9Z24NSTRLPBF Infineon-IRF9Z24NS-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee376ad063e
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -8.5A; Idm: -48A; 45W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -8.5A
Pulsed drain current: -48A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRF9Z34NPBF description irf9z34n.pdf
IRF9Z34NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -19A; 68W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -19A
Power dissipation: 68W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 23.3nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 322 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
91+0.79 EUR
115+ 0.62 EUR
158+ 0.45 EUR
167+ 0.43 EUR
500+ 0.42 EUR
1000+ 0.41 EUR
Mindestbestellmenge: 91
IRFB260NPBF irfb260n.pdf
IRFB260NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 56A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 56A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 37 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
23+3.12 EUR
37+ 1.93 EUR
1000+ 1.76 EUR
Mindestbestellmenge: 23
IRFB3004PBF irfs3004pbf.pdf
IRFB3004PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.75mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFB3006GPBF irfb3006gpbf.pdf
IRFB3006GPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
IRFB3006PBF description irfb3006pbf.pdf
IRFB3006PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 71 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
15+4.8 EUR
24+ 3.05 EUR
25+ 2.89 EUR
50+ 2.77 EUR
Mindestbestellmenge: 15
IRFB3077PBF description irfb3077pbf.pdf
IRFB3077PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 210A; 370W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 210A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 204 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
30+2.46 EUR
39+ 1.87 EUR
41+ 1.77 EUR
1000+ 1.72 EUR
Mindestbestellmenge: 30
IRFB3206GPBF irfb3206gpbf.pdf?fileId=5546d462533600a40153561550971df5
IRFB3206GPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
33+2.17 EUR
37+ 1.96 EUR
48+ 1.5 EUR
51+ 1.42 EUR
Mindestbestellmenge: 33
IRFB3206PBF irfs3206pbf.pdf
IRFB3206PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 123 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
40+1.8 EUR
45+ 1.62 EUR
57+ 1.27 EUR
60+ 1.2 EUR
Mindestbestellmenge: 40
IRFB3207PBF irfs3207pbf.pdf
IRFB3207PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 65 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
15+4.85 EUR
17+ 4.36 EUR
22+ 3.35 EUR
23+ 3.16 EUR
Mindestbestellmenge: 15
IRFB3207ZGPBF irfb3207zgpbf.pdf
IRFB3207ZGPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFB3207ZPBF description irfs3207zpbf.pdf
IRFB3207ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 65 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
23+3.13 EUR
30+ 2.39 EUR
32+ 2.25 EUR
100+ 2.22 EUR
500+ 2.16 EUR
Mindestbestellmenge: 23
IRFB3256PBF IRFB3256PBF.pdf
IRFB3256PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFB3306PBF irfs3306pbf.pdf
IRFB3306PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 160A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2086 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
40+1.79 EUR
50+ 1.43 EUR
73+ 0.99 EUR
77+ 0.93 EUR
2000+ 0.9 EUR
Mindestbestellmenge: 40
IRFB3307PBF irfs3307.pdf
IRFB3307PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 74 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
23+3.12 EUR
26+ 2.82 EUR
34+ 2.14 EUR
36+ 2.03 EUR
Mindestbestellmenge: 23
IRFB3307ZPBF irfs3307zpbf.pdf
IRFB3307ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 128 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
27+2.69 EUR
31+ 2.33 EUR
50+ 1.46 EUR
53+ 1.37 EUR
2000+ 1.33 EUR
Mindestbestellmenge: 27
IRFB3607PBF irfs3607pbf.pdf
IRFB3607PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 513 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
64+1.13 EUR
82+ 0.88 EUR
108+ 0.67 EUR
114+ 0.63 EUR
250+ 0.61 EUR
Mindestbestellmenge: 64
IRFB3806PBF irfs3806pbf.pdf
IRFB3806PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 43A
Power dissipation: 71W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 15.8mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 343 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
53+1.36 EUR
75+ 0.96 EUR
88+ 0.82 EUR
107+ 0.67 EUR
113+ 0.63 EUR
Mindestbestellmenge: 53
IRFB38N20DPBF description irfs38n20d.pdf
IRFB38N20DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 44A; 320W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 44A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 54mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 142 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
23+3.19 EUR
32+ 2.29 EUR
50+ 1.44 EUR
53+ 1.36 EUR
Mindestbestellmenge: 23
IRFB4019PBF description irfb4019pbf.pdf
IRFB4019PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 17A; 80W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 17A
Power dissipation: 80W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 227 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
41+1.77 EUR
48+ 1.5 EUR
73+ 0.99 EUR
77+ 0.93 EUR
1000+ 0.9 EUR
Mindestbestellmenge: 41
IRFB4020PBF irfb4020pbf.pdf
IRFB4020PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 100W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 135 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
48+1.52 EUR
59+ 1.23 EUR
65+ 1.1 EUR
69+ 1.04 EUR
500+ 1 EUR
Mindestbestellmenge: 48
IRFB4110GPBF IRFB4110GPBF.pdf
IRFB4110GPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 370W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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