IRF8915TRPBF Infineon Technologies
auf Bestellung 2124 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 352+ | 0.42 EUR |
| 353+ | 0.4 EUR |
| 354+ | 0.37 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.34 EUR |
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Produktbewertung abgeben
Technische Details IRF8915TRPBF Infineon Technologies
Description: INFINEON - IRF8915TRPBF - Dual-MOSFET, n-Kanal, 20 V, 20 V, 8.9 A, 8.9 A, 0.0146 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 8.9A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 20V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 8.9A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.0146ohm, Verlustleistung, p-Kanal: 2W, Drain-Source-Spannung Vds, n-Kanal: 20V, euEccn: NLR, Bauform - Transistor: SOIC, Anzahl der Pins: 8Pins, Produktpalette: HEXFET Series, Drain-Source-Durchgangswiderstand, n-Kanal: 0.0146ohm, productTraceability: No, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 2W, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (08-Jul-2021).
Weitere Produktangebote IRF8915TRPBF nach Preis ab 0.34 EUR bis 1.64 EUR
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IRF8915TRPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 20V 8.9A 8-Pin SOIC N T/R |
auf Bestellung 2124 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF8915TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 20V 8.9A 8SO Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8.9A Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V Rds On (Max) @ Id, Vgs: 18.3mOhm @ 8.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete |
auf Bestellung 14211 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF8915TRPBF | Hersteller : Infineon Technologies |
MOSFET MOSFT DUAL NCh 20V 8.9A |
auf Bestellung 3840 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF8915TRPBF | Hersteller : INFINEON |
Description: INFINEON - IRF8915TRPBF - Dual-MOSFET, n-Kanal, 20 V, 20 V, 8.9 A, 8.9 A, 0.0146 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 8.9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 8.9A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0146ohm Verlustleistung, p-Kanal: 2W Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pins Produktpalette: HEXFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.0146ohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C SVHC: No SVHC (08-Jul-2021) |
auf Bestellung 731 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF8915TRPBF | Hersteller : INFINEON |
Description: INFINEON - IRF8915TRPBF - Dual-MOSFET, n-Kanal, 20 V, 20 V, 8.9 A, 8.9 A, 0.0146 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 8.9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 8.9A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0146ohm Verlustleistung, p-Kanal: 2W Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pins Produktpalette: HEXFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.0146ohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C SVHC: No SVHC (08-Jul-2021) |
auf Bestellung 731 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF8915TRPBF | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IRF8915TRPBF - IRF8915 - HEXFET POWER MOSFET tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 14211 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF8915TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 7.1A; Idm: 71A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 7.1A Pulsed drain current: 71A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 18.3mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
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IRF8915TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 20V 8.9A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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IRF8915TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 20V 8.9A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8.9A Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V Rds On (Max) @ Id, Vgs: 18.3mOhm @ 8.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete |
Produkt ist nicht verfügbar |
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IRF8915TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 20V 8.9A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8.9A Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V Rds On (Max) @ Id, Vgs: 18.3mOhm @ 8.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete |
Produkt ist nicht verfügbar |
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IRF8915TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 7.1A; Idm: 71A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 7.1A Pulsed drain current: 71A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 18.3mΩ Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |