IRFB3206GPBF INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 33+ | 2.17 EUR |
| 37+ | 1.96 EUR |
| 48+ | 1.5 EUR |
| 51+ | 1.42 EUR |
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Technische Details IRFB3206GPBF INFINEON TECHNOLOGIES
Description: MOSFET N-CH 60V 120A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 75A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 150µA, Supplier Device Package: TO-220AB, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 50 V.
Weitere Produktangebote IRFB3206GPBF nach Preis ab 1.42 EUR bis 6 EUR
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IRFB3206GPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 150A; 300W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 150A Power dissipation: 300W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB3206GPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 60V 210A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 888 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB3206GPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 60V 210A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 882 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB3206GPBF | Hersteller : Infineon Technologies |
MOSFETs MOSFT 60V 210A 3mOhm 120nC |
auf Bestellung 102 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFB3206GPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 120A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 75A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: TO-220AB Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 50 V |
auf Bestellung 549 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFB3206GPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 60V 210A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 888 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRFB3206GPBF | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IRFB3206GPBF - IRFB320 120A, 60V, N-CHANEL POWER MOSFET tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 495 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB3206GPBF Produktcode: 52938 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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IRFB3206GPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 60V 210A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |