IRF9328TRPBF Infineon Technologies
auf Bestellung 9984 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 200+ | 0.76 EUR |
| 217+ | 0.67 EUR |
| 224+ | 0.63 EUR |
| 500+ | 0.58 EUR |
| 1000+ | 0.54 EUR |
| 4000+ | 0.48 EUR |
| 8000+ | 0.45 EUR |
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Technische Details IRF9328TRPBF Infineon Technologies
Description: MOSFET P-CH 30V 12A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 11.9mOhm @ 12A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 2.4V @ 25µA, Supplier Device Package: 8-SO, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V.
Weitere Produktangebote IRF9328TRPBF nach Preis ab 1.07 EUR bis 1.85 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IRF9328TRPBF | Hersteller : Infineon / IR |
 MOSFET MOSFT P-Ch -30V -12A 11.9mOhm |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF9328TRPBF | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IRF9328TRPBF - TRENCH < 40V tariffCode: 85423990 productTraceability: No rohsCompliant: YES euEccn: TBC hazardous: false rohsPhthalatesCompliant: TBA usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 1640 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9328TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET P-CH 30V 12A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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IRF9328TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -12A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -12A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 4000 Stücke |
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IRF9328TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 30V 12A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 11.9mOhm @ 12A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 25µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRF9328TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 30V 12A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 11.9mOhm @ 12A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 25µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRF9328TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -12A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -12A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |