IRF7910TRPBF Infineon Technologies
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Technische Details IRF7910TRPBF Infineon Technologies
Description: MOSFET 2N-CH 12V 10A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 10A, Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 6V, Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-SO, Part Status: Obsolete.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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IRF7910TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 10A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 12V Drain current: 10A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
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IRF7910TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 12V 10A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 10A Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 6V Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete |
Produkt ist nicht verfügbar |
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IRF7910TRPBF | Hersteller : Infineon Technologies | MOSFET MOSFT DUAL NCh 12V 10A |
Produkt ist nicht verfügbar |
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IRF7910TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 10A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 12V Drain current: 10A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
Produkt ist nicht verfügbar |