IRFB3256PBF International Rectifier
Hersteller: International RectifierDescription: IRFB3256 - 12V-300V N-CHANNEL PO
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 48 V
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 240+ | 2.51 EUR |
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Technische Details IRFB3256PBF International Rectifier
Description: IRFB3256 - 12V-300V N-CHANNEL PO, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 75A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 150µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 48 V.
Weitere Produktangebote IRFB3256PBF nach Preis ab 2.99 EUR bis 5.77 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IRFB3256PBF | Hersteller : Infineon Technologies |
MOSFET MOSFET, 60V, 210A, 3 130 nC Qg, TO-220AB |
auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFB3256PBF | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IRFB3256PBF - IRFB3256 12V-300V N-CHANNEL POWER MOSFET tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB3256PBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 206A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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IRFB3256PBF | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 75A; 300W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 75A Power dissipation: 300W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: THT Gate charge: 130nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IRFB3256PBF | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 75A; 300W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 75A Power dissipation: 300W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: THT Gate charge: 130nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |