IPA65R660CFDXKSA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 27.8W; TO220FP
Technology: CoolMOS™
Case: TO220FP
Mounting: THT
On-state resistance: 0.66Ω
Kind of package: tube
Power dissipation: 27.8W
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Polarisation: unipolar
Drain current: 6A
Anzahl je Verpackung: 1 Stücke
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Technische Details IPA65R660CFDXKSA1 INFINEON TECHNOLOGIES
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 27.8W; TO220FP, Technology: CoolMOS™, Case: TO220FP, Mounting: THT, On-state resistance: 0.66Ω, Kind of package: tube, Power dissipation: 27.8W, Kind of channel: enhanced, Drain-source voltage: 650V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Polarisation: unipolar, Drain current: 6A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IPA65R660CFDXKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IPA65R660CFDXKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 650V 6A TO220 |
Produkt ist nicht verfügbar |
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IPA65R660CFDXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 27.8W; TO220FP Technology: CoolMOS™ Case: TO220FP Mounting: THT On-state resistance: 0.66Ω Kind of package: tube Power dissipation: 27.8W Kind of channel: enhanced Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Polarisation: unipolar Drain current: 6A |
Produkt ist nicht verfügbar |