IPA65R280E6XKSA1 Infineon Technologies
auf Bestellung 235 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 69+ | 2.22 EUR |
| 77+ | 1.92 EUR |
| 100+ | 1.77 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPA65R280E6XKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 13.8A TO220-FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V, Power Dissipation (Max): 32W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 440µA, Supplier Device Package: PG-TO220-FP, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V.
Weitere Produktangebote IPA65R280E6XKSA1 nach Preis ab 1.94 EUR bis 4.15 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
IPA65R280E6XKSA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 650V 13.8A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 235 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||
 |
IPA65R280E6XKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 650V 13.8A TO220-FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 440µA Supplier Device Package: PG-TO220-FP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V |
auf Bestellung 350 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
 |
IPA65R280E6XKSA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IPA65R280E6XKSA1 - IPA65R280 - 650V, N-CHANEL POWER MOSFET, tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||
|
|
IPA65R280E6XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 13.8A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
|||||||||
 |
IPA65R280E6XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 700V 13.8A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
|||||||||
 |
IPA65R280E6XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 32W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 13.8A Power dissipation: 32W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||
 |
IPA65R280E6XKSA1 | Hersteller : Infineon Technologies |
MOSFETs Y |
Produkt ist nicht verfügbar |
|||||||||
|
|
IPA65R280E6XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 32W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 13.8A Power dissipation: 32W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |