IPP093N06N3GXKSA1 Infineon Technologies
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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144+ | 1.05 EUR |
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Technische Details IPP093N06N3GXKSA1 Infineon Technologies
Description: MOSFET N-CH 60V 50A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 9.3mOhm @ 50A, 10V, Power Dissipation (Max): 71W (Tc), Vgs(th) (Max) @ Id: 4V @ 34µA, Supplier Device Package: PG-TO220-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 30 V.
Weitere Produktangebote IPP093N06N3GXKSA1 nach Preis ab 1.13 EUR bis 2.08 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IPP093N06N3GXKSA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 60V 50A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP093N06N3GXKSA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 60V 50A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP093N06N3GXKSA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 60V 50A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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IPP093N06N3GXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 71W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 9.3mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPP093N06N3GXKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 50A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 50A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 4V @ 34µA Supplier Device Package: PG-TO220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 30 V |
Produkt ist nicht verfügbar |
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IPP093N06N3GXKSA1 | Hersteller : Infineon Technologies | MOSFET TRENCH 40<-<100V |
Produkt ist nicht verfügbar |
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IPP093N06N3GXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 71W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 9.3mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |