IPP120N04S302AKSA1 ROCHESTER ELECTRONICS
Hersteller: ROCHESTER ELECTRONICSDescription: ROCHESTER ELECTRONICS - IPP120N04S302AKSA1 - IPP120N04 - 20V-40V N-CHANNEL AUTOMOTIVE
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 30607 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details IPP120N04S302AKSA1 ROCHESTER ELECTRONICS
Description: MOSFET N-CH 40V 120A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 80A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 230µA, Supplier Device Package: PG-TO220-3-1, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14300 pF @ 25 V.
Weitere Produktangebote IPP120N04S302AKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IPP120N04S302AKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 40V 120A Automotive 3-Pin(3+Tab) TO-220AB Tube |
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IPP120N04S302AKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 120A; 300W Type of transistor: N-MOSFET Technology: OptiMOS™ T Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 300W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: THT Gate charge: 160nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPP120N04S302AKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 120A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 230µA Supplier Device Package: PG-TO220-3-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14300 pF @ 25 V |
Produkt ist nicht verfügbar |
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IPP120N04S302AKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 120A; 300W Type of transistor: N-MOSFET Technology: OptiMOS™ T Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 300W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: THT Gate charge: 160nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |