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NTGD3148NT1G ONSEMI ntgd3148n-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.2A; 0.9W; TSOP6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Power dissipation: 0.9W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTGD4167CT1G ONSEMI ntgd4167c-d.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 1.9/-1.4A
Power dissipation: 0.9W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 90/170mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTGS3130NT1G ONSEMI ntgs3130n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 19A; 600mW; TSOP6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Pulsed drain current: 19A
Power dissipation: 0.6W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 19Ω
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTGS3136PT1G ONSEMI ntgs3136p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.6A; Idm: -20A; 700mW; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.6A
Pulsed drain current: -20A
Power dissipation: 0.7W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTGS3433T1G ONSEMI ntgs3433t1-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2.35A; Idm: -14A; 1W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.35A
Pulsed drain current: -14A
Power dissipation: 1W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTGS3441T1G ONSEMI ntgs3441t1-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.35A; 1W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.35A
Power dissipation: 1W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTGS3443T1G NTGS3443T1G ONSEMI NTGS3443.PDF Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; 1W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Power dissipation: 1W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTGS3446T1G ONSEMI ntgs3446-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.1A; 2W; TSOP6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.1A
Power dissipation: 2W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTGS3455T1G ONSEMI ntgs3455t1-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; 2W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Power dissipation: 2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTGS4111PT1G ONSEMI ntgs4111p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; 1.25W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Power dissipation: 1.25W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTGS4141NT1G NTGS4141NT1G ONSEMI ntgs4141n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; 1W; TSOP6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.6A
Power dissipation: 1W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 4950 Stücke:
Lieferzeit 7-14 Tag (e)
160+0.46 EUR
205+ 0.35 EUR
280+ 0.26 EUR
295+ 0.24 EUR
Mindestbestellmenge: 160
NTH027N65S3F-F155 ONSEMI nth027n65s3f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 259nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTH4L015N065SC1 ONSEMI NTH4L015N065SC1.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; Idm: 483A; 250W; TO247
Mounting: THT
Kind of package: tube
Drain-source voltage: 650V
Drain current: 100A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Gate charge: 283nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 483A
Case: TO247
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTH4L020N120SC1 NTH4L020N120SC1 ONSEMI NTH4L020N120SC1.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 84A; Idm: 408A; 255W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 84A
Pulsed drain current: 408A
Power dissipation: 255W
Case: TO247-4
Gate-source voltage: -15...25V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTH4L027N65S3F ONSEMI nth4l027n65s3f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 259nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTH4L040N120SC1 NTH4L040N120SC1 ONSEMI NTH4L040N120SC1.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 41A; Idm: 232A; 160W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 41A
Pulsed drain current: 232A
Power dissipation: 160W
Case: TO247-4
Gate-source voltage: -15...25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTH4L040N65S3F NTH4L040N65S3F ONSEMI nth4l040n65s3f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 162.5A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
4+18.6 EUR
Mindestbestellmenge: 4
NTH4L067N65S3H ONSEMI nth4l067n65s3h-d.pdf NTH4L067N65S3H THT N channel transistors
Produkt ist nicht verfügbar
NTH4L080N120SC1 NTH4L080N120SC1 ONSEMI NTH4L080N120SC1.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 21A; Idm: 125A; 28W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 21A
Pulsed drain current: 125A
Power dissipation: 28W
Case: TO247-4
Gate-source voltage: -15...25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
4+19.88 EUR
5+ 14.44 EUR
Mindestbestellmenge: 4
NTH4L160N120SC1 NTH4L160N120SC1 ONSEMI NTH4L160N120SC1.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Case: TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Technology: SiC
On-state resistance: 224mΩ
Type of transistor: N-MOSFET
Power dissipation: 55.5W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: -15...25V
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Drain current: 12.3A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTH4LN067N65S3H ONSEMI nth4ln067n65s3h-d.pdf NTH4LN067N65S3H THT N channel transistors
Produkt ist nicht verfügbar
NTHC5513T1G ONSEMI nthc5513-d.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 3.9/-3A
Pulsed drain current: 12A
Power dissipation: 2.1W
Case: ChipFET
Gate-source voltage: ±12V
On-state resistance: 115/240mΩ
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTHD3100CT1G ONSEMI nthd3100c-d.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 3.9/-4.4A
Pulsed drain current: 12A
Power dissipation: 3.1W
Case: ChipFET
Gate-source voltage: ±12/±8V
On-state resistance: 115/110mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2385 Stücke:
Lieferzeit 7-14 Tag (e)
56+1.29 EUR
74+ 0.97 EUR
104+ 0.69 EUR
110+ 0.65 EUR
Mindestbestellmenge: 56
NTHD3101FT1G ONSEMI nthd3101f-d.pdf NTHD3101FT1G SMD P channel transistors
Produkt ist nicht verfügbar
NTHD3102CT1G ONSEMI nthd3102c-d.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 5.5/-4.2A
Pulsed drain current: 16A
Power dissipation: 0.6W
Case: ChipFET
Gate-source voltage: ±8/±8V
On-state resistance: 37/83mΩ
Mounting: SMD
Gate charge: 5.8/6.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTHD4502NT1G ONSEMI nthd4502n-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.2/2.9A; Idm: 16÷12.6A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2/2.9A
Pulsed drain current: 16...12.6A
Power dissipation: 0.6W
Case: ChipFET
Gate-source voltage: ±8/±8V
On-state resistance: 37/83mΩ
Mounting: SMD
Gate charge: 5.8/6.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTHD4508NT1G ONSEMI nthd4508n-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.2A; Idm: 12A; 590mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 0.59W
Case: ChipFET
Gate-source voltage: ±12V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 2.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTHL019N65S3H ONSEMI nthl019n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 73A; Idm: 328A; 625W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 73A
Pulsed drain current: 328A
Power dissipation: 625W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 282nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTHL020N090SC1 NTHL020N090SC1 ONSEMI NTHL020N090SC1.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 427A; 251W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 83A
Pulsed drain current: 427A
Power dissipation: 251W
Case: TO247-3
Gate-source voltage: -10...19V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTHL020N120SC1 NTHL020N120SC1 ONSEMI NTHL020N120SC1.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 412A; 267W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 73A
Pulsed drain current: 412A
Power dissipation: 267W
Case: TO247-3
Gate-source voltage: -15...25V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTHL027N65S3HF ONSEMI NTHL027N65S3HF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 27.4mΩ
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTHL033N65S3HF ONSEMI NTHL033N65S3HF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 53A; Idm: 175A; 500W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 53A
Pulsed drain current: 175A
Power dissipation: 500W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 188nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 450 Stücke
Produkt ist nicht verfügbar
NTHL040N120SC1 NTHL040N120SC1 ONSEMI NTHL040N120SC1.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -15...25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTHL040N65S3F ONSEMI NTHL040N65S3F.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 162.5A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 450 Stücke
Produkt ist nicht verfügbar
NTHL040N65S3HF ONSEMI nthl040n65s3hf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 162.5A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTHL041N60S5H ONSEMI NTHL041N60S5H.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; Idm: 200A; 329W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Pulsed drain current: 200A
Power dissipation: 329W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 32.8mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 192 Stücke:
Lieferzeit 7-14 Tag (e)
6+13.99 EUR
7+ 10.24 EUR
8+ 9.68 EUR
Mindestbestellmenge: 6
NTHL050N65S3HF ONSEMI nthl050n65s3hf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 37A; Idm: 145A; 378W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 37A
Pulsed drain current: 145A
Power dissipation: 378W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTHL060N090SC1 NTHL060N090SC1 ONSEMI NTHL060N090SC1.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 32A; Idm: 184A; 110W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 32A
Pulsed drain current: 184A
Power dissipation: 110W
Case: TO247-3
Gate-source voltage: -10...20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTHL065N65S3F ONSEMI NTHL065N65S3F.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 115A; 337W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 115A
Power dissipation: 337W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 450 Stücke
Produkt ist nicht verfügbar
NTHL065N65S3HF ONSEMI nthl065n65s3hf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 115A; 337W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 115A
Power dissipation: 337W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 54mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTHL075N065SC1 ONSEMI NTHL075N065SC1.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 120A
Power dissipation: 74W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTHL080N120SC1A ONSEMI nthl080n120sc1a-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 132A; 178W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 22A
Pulsed drain current: 132A
Power dissipation: 178W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 114mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTHL082N65S3F ONSEMI NTHL082N65S3F.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 25.5A; Idm: 100A; 313W; TO247
Mounting: THT
Kind of package: tube
Drain-source voltage: 650V
Drain current: 25.5A
On-state resistance: 82mΩ
Type of transistor: N-MOSFET
Power dissipation: 313W
Polarisation: unipolar
Gate charge: 81nC
Technology: SuperFET®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 100A
Case: TO247
Anzahl je Verpackung: 450 Stücke
Produkt ist nicht verfügbar
NTHL095N65S3HF ONSEMI nthl095n65s3hf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22.8A; Idm: 90A; 272W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22.8A
Pulsed drain current: 90A
Power dissipation: 272W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTHL110N65S3F ONSEMI NTHL110N65S3F.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.5A; Idm: 69A; 240W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.5A
Pulsed drain current: 69A
Power dissipation: 240W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 450 Stücke
Produkt ist nicht verfügbar
NTHL160N120SC1 NTHL160N120SC1 ONSEMI NTHL160N120SC1.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Case: TO247-3
Mounting: THT
Kind of package: tube
Technology: SiC
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Power dissipation: 59W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: -15...25V
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Drain current: 12A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTHL190N65S3HF ONSEMI nthl190n65s3hf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.7A; Idm: 50A; 162W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.7A
Pulsed drain current: 50A
Power dissipation: 162W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTHLD040N65S3HF ONSEMI nthld040n65s3hf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 162.5A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTHS4101PT1G ONSEMI nths4101p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; 0.7W; ChipFET
Mounting: SMD
Case: ChipFET
Kind of package: reel; tape
Power dissipation: 0.7W
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: -20V
On-state resistance: 34mΩ
Polarisation: unipolar
Type of transistor: P-MOSFET
Drain current: -4.8A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTJD1155LT1G NTJD1155LT1G ONSEMI NTJD1155L.PDF Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; P-Channel; SMD; SC88
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SC88
On-state resistance: 130/320mΩ
Kind of package: reel; tape
Supply voltage: 1.8...8V DC
Control voltage: 1.5...8V DC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2578 Stücke:
Lieferzeit 7-14 Tag (e)
175+0.41 EUR
203+ 0.35 EUR
275+ 0.26 EUR
291+ 0.25 EUR
3000+ 0.24 EUR
Mindestbestellmenge: 175
NTJD4001NT1G NTJD4001NT1G ONSEMI ntjd4001n-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.18A
Power dissipation: 0.272W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2284 Stücke:
Lieferzeit 7-14 Tag (e)
173+0.41 EUR
212+ 0.34 EUR
285+ 0.25 EUR
325+ 0.22 EUR
500+ 0.14 EUR
3000+ 0.13 EUR
Mindestbestellmenge: 173
NTJD4105CT1G NTJD4105CT1G ONSEMI NTJD4105C.PDF Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-8V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-8V
Drain current: 0.63/-0.755A
Power dissipation: 0.27W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±8V; ±12V
On-state resistance: 445/900mΩ
Mounting: SMD
Gate charge: 3/4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTJD4105CT2G NTJD4105CT2G ONSEMI ntjd4105c-d.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-8V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-8V
Drain current: 0.46/-0.558A
Power dissipation: 0.14W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±8V; ±12V
On-state resistance: 375/300mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTJD4401NT1G NTJD4401NT1G ONSEMI NTJD4401N.PDF Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.46A; 0.27W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.46A
Power dissipation: 0.27W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±12V
On-state resistance: 445mΩ
Mounting: SMD
Gate charge: 1.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1800 Stücke:
Lieferzeit 7-14 Tag (e)
136+0.53 EUR
183+ 0.39 EUR
230+ 0.31 EUR
334+ 0.21 EUR
500+ 0.14 EUR
532+ 0.13 EUR
Mindestbestellmenge: 136
NTJD5121NT1G NTJD5121NT1G ONSEMI NTJD5121N_NVJD5121N.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.295A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.295A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3105 Stücke:
Lieferzeit 7-14 Tag (e)
179+0.4 EUR
302+ 0.24 EUR
454+ 0.16 EUR
538+ 0.13 EUR
992+ 0.072 EUR
1049+ 0.068 EUR
Mindestbestellmenge: 179
NTJS3151PT1G ONSEMI ntjs3151p-d.pdf NTJS3151PT1G SMD P channel transistors
Produkt ist nicht verfügbar
NTJS3157NT1G NTJS3157NT1G ONSEMI ntjs3157n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 2.3A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
NTJS4151PT1G NTJS4151PT1G ONSEMI ntjs4151p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Power dissipation: 1W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1940 Stücke:
Lieferzeit 7-14 Tag (e)
285+0.25 EUR
410+ 0.17 EUR
465+ 0.15 EUR
505+ 0.14 EUR
535+ 0.13 EUR
Mindestbestellmenge: 285
NTK3043NT1G ONSEMI ntk3043n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.185A; 0.44W; SOT723
Type of transistor: N-MOSFET
Case: SOT723
Mounting: SMD
Power dissipation: 0.44W
Features of semiconductor devices: ESD protected gate
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±10V
Drain-source voltage: 20V
Drain current: 0.185A
On-state resistance: 3.4Ω
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
NTK3134NT1G NTK3134NT1G ONSEMI NTK3134N.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.64A; 0.45W; SOT723
Kind of package: reel; tape
Mounting: SMD
Drain current: 0.64A
On-state resistance: 1.2Ω
Type of transistor: N-MOSFET
Power dissipation: 0.45W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±6V
Case: SOT723
Drain-source voltage: 20V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1430 Stücke:
Lieferzeit 7-14 Tag (e)
150+0.49 EUR
265+ 0.27 EUR
315+ 0.23 EUR
335+ 0.22 EUR
4000+ 0.21 EUR
Mindestbestellmenge: 150
NTGD3148NT1G ntgd3148n-d.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.2A; 0.9W; TSOP6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Power dissipation: 0.9W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTGD4167CT1G ntgd4167c-d.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 1.9/-1.4A
Power dissipation: 0.9W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 90/170mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTGS3130NT1G ntgs3130n-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 19A; 600mW; TSOP6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Pulsed drain current: 19A
Power dissipation: 0.6W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 19Ω
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTGS3136PT1G ntgs3136p-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.6A; Idm: -20A; 700mW; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.6A
Pulsed drain current: -20A
Power dissipation: 0.7W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTGS3433T1G ntgs3433t1-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2.35A; Idm: -14A; 1W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.35A
Pulsed drain current: -14A
Power dissipation: 1W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTGS3441T1G ntgs3441t1-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.35A; 1W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.35A
Power dissipation: 1W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTGS3443T1G NTGS3443.PDF
NTGS3443T1G
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; 1W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Power dissipation: 1W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTGS3446T1G ntgs3446-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.1A; 2W; TSOP6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.1A
Power dissipation: 2W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTGS3455T1G ntgs3455t1-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; 2W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Power dissipation: 2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTGS4111PT1G ntgs4111p-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; 1.25W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Power dissipation: 1.25W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTGS4141NT1G ntgs4141n-d.pdf
NTGS4141NT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; 1W; TSOP6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.6A
Power dissipation: 1W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 4950 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
160+0.46 EUR
205+ 0.35 EUR
280+ 0.26 EUR
295+ 0.24 EUR
Mindestbestellmenge: 160
NTH027N65S3F-F155 nth027n65s3f-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 259nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTH4L015N065SC1 NTH4L015N065SC1.PDF
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; Idm: 483A; 250W; TO247
Mounting: THT
Kind of package: tube
Drain-source voltage: 650V
Drain current: 100A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Gate charge: 283nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 483A
Case: TO247
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTH4L020N120SC1 NTH4L020N120SC1.PDF
NTH4L020N120SC1
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 84A; Idm: 408A; 255W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 84A
Pulsed drain current: 408A
Power dissipation: 255W
Case: TO247-4
Gate-source voltage: -15...25V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTH4L027N65S3F nth4l027n65s3f-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 259nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTH4L040N120SC1 NTH4L040N120SC1.PDF
NTH4L040N120SC1
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 41A; Idm: 232A; 160W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 41A
Pulsed drain current: 232A
Power dissipation: 160W
Case: TO247-4
Gate-source voltage: -15...25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTH4L040N65S3F nth4l040n65s3f-d.pdf
NTH4L040N65S3F
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 162.5A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
4+18.6 EUR
Mindestbestellmenge: 4
NTH4L067N65S3H nth4l067n65s3h-d.pdf
Hersteller: ONSEMI
NTH4L067N65S3H THT N channel transistors
Produkt ist nicht verfügbar
NTH4L080N120SC1 NTH4L080N120SC1.PDF
NTH4L080N120SC1
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 21A; Idm: 125A; 28W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 21A
Pulsed drain current: 125A
Power dissipation: 28W
Case: TO247-4
Gate-source voltage: -15...25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
4+19.88 EUR
5+ 14.44 EUR
Mindestbestellmenge: 4
NTH4L160N120SC1 NTH4L160N120SC1.PDF
NTH4L160N120SC1
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Case: TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Technology: SiC
On-state resistance: 224mΩ
Type of transistor: N-MOSFET
Power dissipation: 55.5W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: -15...25V
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Drain current: 12.3A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTH4LN067N65S3H nth4ln067n65s3h-d.pdf
Hersteller: ONSEMI
NTH4LN067N65S3H THT N channel transistors
Produkt ist nicht verfügbar
NTHC5513T1G nthc5513-d.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 3.9/-3A
Pulsed drain current: 12A
Power dissipation: 2.1W
Case: ChipFET
Gate-source voltage: ±12V
On-state resistance: 115/240mΩ
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTHD3100CT1G nthd3100c-d.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 3.9/-4.4A
Pulsed drain current: 12A
Power dissipation: 3.1W
Case: ChipFET
Gate-source voltage: ±12/±8V
On-state resistance: 115/110mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2385 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
56+1.29 EUR
74+ 0.97 EUR
104+ 0.69 EUR
110+ 0.65 EUR
Mindestbestellmenge: 56
NTHD3101FT1G nthd3101f-d.pdf
Hersteller: ONSEMI
NTHD3101FT1G SMD P channel transistors
Produkt ist nicht verfügbar
NTHD3102CT1G nthd3102c-d.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 5.5/-4.2A
Pulsed drain current: 16A
Power dissipation: 0.6W
Case: ChipFET
Gate-source voltage: ±8/±8V
On-state resistance: 37/83mΩ
Mounting: SMD
Gate charge: 5.8/6.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTHD4502NT1G nthd4502n-d.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.2/2.9A; Idm: 16÷12.6A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2/2.9A
Pulsed drain current: 16...12.6A
Power dissipation: 0.6W
Case: ChipFET
Gate-source voltage: ±8/±8V
On-state resistance: 37/83mΩ
Mounting: SMD
Gate charge: 5.8/6.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTHD4508NT1G nthd4508n-d.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.2A; Idm: 12A; 590mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 0.59W
Case: ChipFET
Gate-source voltage: ±12V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 2.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTHL019N65S3H nthl019n65s3h-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 73A; Idm: 328A; 625W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 73A
Pulsed drain current: 328A
Power dissipation: 625W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 282nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTHL020N090SC1 NTHL020N090SC1.PDF
NTHL020N090SC1
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 427A; 251W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 83A
Pulsed drain current: 427A
Power dissipation: 251W
Case: TO247-3
Gate-source voltage: -10...19V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTHL020N120SC1 NTHL020N120SC1.PDF
NTHL020N120SC1
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 412A; 267W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 73A
Pulsed drain current: 412A
Power dissipation: 267W
Case: TO247-3
Gate-source voltage: -15...25V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTHL027N65S3HF NTHL027N65S3HF.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 27.4mΩ
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTHL033N65S3HF NTHL033N65S3HF.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 53A; Idm: 175A; 500W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 53A
Pulsed drain current: 175A
Power dissipation: 500W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 188nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 450 Stücke
Produkt ist nicht verfügbar
NTHL040N120SC1 NTHL040N120SC1.PDF
NTHL040N120SC1
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -15...25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTHL040N65S3F NTHL040N65S3F.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 162.5A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 450 Stücke
Produkt ist nicht verfügbar
NTHL040N65S3HF nthl040n65s3hf-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 162.5A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTHL041N60S5H NTHL041N60S5H.PDF
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; Idm: 200A; 329W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Pulsed drain current: 200A
Power dissipation: 329W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 32.8mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 192 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
6+13.99 EUR
7+ 10.24 EUR
8+ 9.68 EUR
Mindestbestellmenge: 6
NTHL050N65S3HF nthl050n65s3hf-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 37A; Idm: 145A; 378W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 37A
Pulsed drain current: 145A
Power dissipation: 378W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTHL060N090SC1 NTHL060N090SC1.PDF
NTHL060N090SC1
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 32A; Idm: 184A; 110W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 32A
Pulsed drain current: 184A
Power dissipation: 110W
Case: TO247-3
Gate-source voltage: -10...20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTHL065N65S3F NTHL065N65S3F.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 115A; 337W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 115A
Power dissipation: 337W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 450 Stücke
Produkt ist nicht verfügbar
NTHL065N65S3HF nthl065n65s3hf-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 115A; 337W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 115A
Power dissipation: 337W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 54mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTHL075N065SC1 NTHL075N065SC1.PDF
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 120A
Power dissipation: 74W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTHL080N120SC1A nthl080n120sc1a-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 132A; 178W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 22A
Pulsed drain current: 132A
Power dissipation: 178W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 114mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTHL082N65S3F NTHL082N65S3F.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 25.5A; Idm: 100A; 313W; TO247
Mounting: THT
Kind of package: tube
Drain-source voltage: 650V
Drain current: 25.5A
On-state resistance: 82mΩ
Type of transistor: N-MOSFET
Power dissipation: 313W
Polarisation: unipolar
Gate charge: 81nC
Technology: SuperFET®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 100A
Case: TO247
Anzahl je Verpackung: 450 Stücke
Produkt ist nicht verfügbar
NTHL095N65S3HF nthl095n65s3hf-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22.8A; Idm: 90A; 272W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22.8A
Pulsed drain current: 90A
Power dissipation: 272W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTHL110N65S3F NTHL110N65S3F.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.5A; Idm: 69A; 240W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.5A
Pulsed drain current: 69A
Power dissipation: 240W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 450 Stücke
Produkt ist nicht verfügbar
NTHL160N120SC1 NTHL160N120SC1.PDF
NTHL160N120SC1
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Case: TO247-3
Mounting: THT
Kind of package: tube
Technology: SiC
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Power dissipation: 59W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: -15...25V
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Drain current: 12A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTHL190N65S3HF nthl190n65s3hf-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.7A; Idm: 50A; 162W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.7A
Pulsed drain current: 50A
Power dissipation: 162W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTHLD040N65S3HF nthld040n65s3hf-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 162.5A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTHS4101PT1G nths4101p-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; 0.7W; ChipFET
Mounting: SMD
Case: ChipFET
Kind of package: reel; tape
Power dissipation: 0.7W
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: -20V
On-state resistance: 34mΩ
Polarisation: unipolar
Type of transistor: P-MOSFET
Drain current: -4.8A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTJD1155LT1G NTJD1155L.PDF
NTJD1155LT1G
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; P-Channel; SMD; SC88
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SC88
On-state resistance: 130/320mΩ
Kind of package: reel; tape
Supply voltage: 1.8...8V DC
Control voltage: 1.5...8V DC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2578 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
175+0.41 EUR
203+ 0.35 EUR
275+ 0.26 EUR
291+ 0.25 EUR
3000+ 0.24 EUR
Mindestbestellmenge: 175
NTJD4001NT1G ntjd4001n-d.pdf
NTJD4001NT1G
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.18A
Power dissipation: 0.272W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2284 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
173+0.41 EUR
212+ 0.34 EUR
285+ 0.25 EUR
325+ 0.22 EUR
500+ 0.14 EUR
3000+ 0.13 EUR
Mindestbestellmenge: 173
NTJD4105CT1G NTJD4105C.PDF
NTJD4105CT1G
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-8V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-8V
Drain current: 0.63/-0.755A
Power dissipation: 0.27W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±8V; ±12V
On-state resistance: 445/900mΩ
Mounting: SMD
Gate charge: 3/4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTJD4105CT2G ntjd4105c-d.pdf
NTJD4105CT2G
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-8V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-8V
Drain current: 0.46/-0.558A
Power dissipation: 0.14W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±8V; ±12V
On-state resistance: 375/300mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTJD4401NT1G NTJD4401N.PDF
NTJD4401NT1G
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.46A; 0.27W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.46A
Power dissipation: 0.27W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±12V
On-state resistance: 445mΩ
Mounting: SMD
Gate charge: 1.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1800 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
136+0.53 EUR
183+ 0.39 EUR
230+ 0.31 EUR
334+ 0.21 EUR
500+ 0.14 EUR
532+ 0.13 EUR
Mindestbestellmenge: 136
NTJD5121NT1G NTJD5121N_NVJD5121N.pdf
NTJD5121NT1G
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.295A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.295A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3105 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
179+0.4 EUR
302+ 0.24 EUR
454+ 0.16 EUR
538+ 0.13 EUR
992+ 0.072 EUR
1049+ 0.068 EUR
Mindestbestellmenge: 179
NTJS3151PT1G ntjs3151p-d.pdf
Hersteller: ONSEMI
NTJS3151PT1G SMD P channel transistors
Produkt ist nicht verfügbar
NTJS3157NT1G ntjs3157n-d.pdf
NTJS3157NT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 2.3A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
NTJS4151PT1G ntjs4151p-d.pdf
NTJS4151PT1G
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Power dissipation: 1W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1940 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
285+0.25 EUR
410+ 0.17 EUR
465+ 0.15 EUR
505+ 0.14 EUR
535+ 0.13 EUR
Mindestbestellmenge: 285
NTK3043NT1G ntk3043n-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.185A; 0.44W; SOT723
Type of transistor: N-MOSFET
Case: SOT723
Mounting: SMD
Power dissipation: 0.44W
Features of semiconductor devices: ESD protected gate
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±10V
Drain-source voltage: 20V
Drain current: 0.185A
On-state resistance: 3.4Ω
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
NTK3134NT1G NTK3134N.PDF
NTK3134NT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.64A; 0.45W; SOT723
Kind of package: reel; tape
Mounting: SMD
Drain current: 0.64A
On-state resistance: 1.2Ω
Type of transistor: N-MOSFET
Power dissipation: 0.45W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±6V
Case: SOT723
Drain-source voltage: 20V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1430 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
150+0.49 EUR
265+ 0.27 EUR
315+ 0.23 EUR
335+ 0.22 EUR
4000+ 0.21 EUR
Mindestbestellmenge: 150
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